Abstract: A method of forming a resistor circuit, the method comprising forming a first resistor comprising a first type of resistor, forming a second resistor comprising a second type of resistor, the first type of resistor being different from the second type of resistor and simultaneously doping a first part of the first resistor and a second part of the second resistor, the first resistor and the second resistor being configured such that doping of the first part of the first resistor and the second part of the second resistor defines a temperature coefficient of the first resistor and a temperature coefficient of the second resistor, wherein the temperature coefficient of the first resistor and the temperature coefficient of the second resistor have opposite signs.

Abstract: A method of fabricating a semiconductor device, including performing the following steps in the following sequence: providing a substrate including first and second gate regions separated by a trench formed in the substrate and growing a thin oxide layer on each of the first and second gate regions. The method further includes removing the thin oxide layer from the second gate region, and growing a thick oxide layer on the second gate region.

Abstract: A method of forming a resistor circuit, the method comprising forming a first resistor comprising a first type of resistor, forming a second resistor comprising a second type of resistor, the first type of resistor being different from the second type of resistor and simultaneously doping a first part of the first resistor and a second part of the second resistor, the first resistor and the second resistor being configured such that doping of the first part of the first resistor and the second part of the second resistor defines a temperature coefficient of the first resistor and a temperature coefficient of the second resistor, wherein the temperature coefficient of the first resistor and the temperature coefficient of the second resistor have opposite signs.

Abstract: A method of fabricating a semiconductor device with Shallow Trench Isolation (STI) includes performing the following steps in the following sequence: providing a substrate comprising first and second gate regions separated by a trench formed in the substrate, wherein the trench is filled with an STI material. The method further includes depositing a sacrificial polysilicon layer covering the STI material; growing a thick oxide layer on the first and second gate regions; removing the thick oxide layer from the first gate region while leaving the thick oxide layer in the second gate region.

Abstract: A method of fabricating a semiconductor device with Shallow Trench Isolation (STI) includes performing the following steps in the following sequence: providing a substrate comprising first and second gate regions separated by a trench formed in the substrate, wherein the trench is filled with an STI material. The method further includes depositing a sacrificial polysilicon layer covering the STI material; growing a thick oxide layer on the first and second gate regions; removing the thick oxide layer from the first gate region while leaving the thick oxide layer in the second gate region.

Abstract: A method of fabricating a semiconductor device, including performing the following steps in the following sequence: providing a substrate including first and second gate regions separated by a trench formed in the substrate and growing a thin oxide layer on each of the first and second gate regions. The method further includes removing the thin oxide layer from the second gate region, and growing a thick oxide layer on the second gate region.