Abstract: A method of testing memory devices includes issuing a command to a Flash memory device, simultaneously monitoring at least one data bit of each Flash memory device for a ready indication, and then verifying the command was performed successfully in each Flash memory device. The command can be an erase command, a write command, or the like. The simultaneous monitoring can be performed by simultaneously asserting signals on output enable nodes of the memory devices, and monitoring bidirectional tester channels dedicated for this purpose. A test fixture includes memory device receptacles, a tester interface, and conductive paths to couple the tester interface to the memory device receptacles. The conductive paths include paths for dedicated bidirectional tester channels and shared bidirectional tester channels.

Abstract: A method of testing memory devices includes issuing a command to a Flash memory device, simultaneously monitoring at least one data bit of each Flash memory device for a ready indication, and then verifying the command was performed successfully in each Flash memory device. The command can be an erase command, a write command, or the like. The simultaneous monitoring can be performed by simultaneously asserting signals on output enable nodes of the memory devices, and monitoring bidirectional tester channels dedicated for this purpose. A test fixture includes memory device receptacles, a tester interface, and conductive paths to couple the tester interface to the memory device receptacles. The conductive paths include paths for dedicated bidirectional tester channels and shared bidirectional tester channels.