Abstract: An improved method of producing silicon oxy-nitride films is provided by utilizing a reactant gas mixture of silane, nitrous oxide and nitrogen at a low deposition temperature of less than 250° C. by flowing the reactant gas mixture through a gas inlet manifold which is also an upper electrode in a plasma-enhanced chemical vapor deposition chamber. The gas inlet manifold is the upper plate of a parallel plate plasma chamber for communicating the reactant gas into the chamber. The plate has a plurality of apertures, each comprising an outlet at a chamber or processing side of the plate and an inlet spaced from the processing side, with the outlet being larger than the inlet for enhancing the dissociation and reactivity of the gas.

Abstract: An apparatus deposits a high quality film onto a transparent substrate in a reactor. The transparent substrate may be made of glass, quartz or a polymer such as plastic. The transparent substrate is heated in a process chamber and a process gas stream is introduced into the process chamber. The apparatus generates a high frequency power output and a low frequency power output from a high frequency power supply and a low frequency power supply, respectively. The high frequency power output is generated at a frequency of about thirteen megahertz or more, and at a power from about one to five kilowatts, while the low frequency power output is generated at a frequency of about two megahertz or less, and at a power from about 300 to two kilowatts. The high frequency power output and the low frequency power output are superimposed and used to excite a plasma from the process gas stream at a pressure between about 0.4 Torr and 3 Torr, and at a temperature between about 250.degree. C. and 450.degree. C.

Abstract: A method of producing silicon oxy-nitride films is provided by utilizing a reactant gas mixture of silane, nitrous oxide and nitrogen at a low deposition temperature of less than 250.degree. C. by flowing the reactant gas mixture through a gas inlet manifold which is also an upper electrode in a plasma-enhanced chemical vapor deposition chamber. The gas inlet manifold is the upper plate of a parallel plate plasma chamber for communicating the reactant gas into the chamber. The plate has a plurality of apertures, each comprising an outlet at a chamber or processing side of the plate and an inlet spaced from the processing side, with the outlet being larger than the inlet for enhancing the dissociation and reactivity of the gas.

Abstract: A lightweight display system (10) includes an output matrix (34) of output terminals (28) of optical conductors (30) supported on a preferably flexible substrate (16) by terminal housings (20). Optical conductors (30) are collated into an input matrix (34) that receives light containing a source image (39) from projector (40). Light propagates through optical conductors (30) and exits output terminals (28) to form an enlarged display image (31) that corresponds to the source image. Preferred embodiments of display screen (12) are collapsible and facilitate transportation and reassembly.

Abstract: A reflector assembly (60) for a fiber-optic matrix display system (10) designed to improve the coupling efficiency of luminous energy between a light emitting element (52) and an input matrix (26) and to provide one or more input matrices (26) with substantially uniform illumination over their respective surfaces. The reflector assembly (60) preferably includes an input aperture for receiving luminous energy from the light emitting element (52); a larger output aperture (70) through which the luminous energy exits the reflector assembly (60) to impinge on the imaging medium and the input terminals (28) of the input matrix (26); and a reflector head (64) positioned between the input aperture (68) and the output aperture (70) and having a right rectangular pyramidal, hollow frustum shape preferably designed according to the formula ##EQU1## where n.sub.1 is the refractive index of optical conductor cores 82, n.sub.2 is the refractive index of optical conductor claddings 84, and .THETA..sub.