Abstract: An imaging device includes a fixed focus lens, an image sensor having an image matrix of a plurality of pixels arranged on a semiconductor substrate and supplying image data, and an electronic circuit for reading the image matrix. The image sensor also includes at least two ambient light sensors arranged on the semiconductor substrate on opposite sides of the image matrix, and configured to capture an ambient light intensity through the fixed lens, and the electronic circuit is also configured to read the two ambient light sensors and to supply ambient light data and the image data.

Abstract: A sensor includes a linear array of sensitive photodetectors each forming part of an associated pixel circuit. The pixel circuits accumulate photo-generated charge from their photodetectors simultaneously but with different gains for different pixels. Each pixel circuit comprises an operational amplifier arranged to integrate a photocurrent received from the photodetector over a sampling interval that is substantially the same for all pixels. The gain of each pixel circuit is made variable over time by switching one or more capacitors in and out of the integrating circuit. In one embodiment a gain selection signal is written into each pixel circuit during a data read-out cycle. In another embodiment, the gain of each pixel varies automatically in response to data obtained from the pixel in a previous cycle. Several similar sensors are used to detect touch positions in a touch screen input device.

Abstract: A pixel structure includes two different photosensitive portions. One portion is shielded from incident light and the signals from both are fed into an op amp so that the differential signal is output as the pixel output, thereby cancelling dark current.

Abstract: An imaging device includes a fixed focused lens, an image sensor having a image matrix of a plurality of pixels arranged on a semiconductor substrate and supplying image data, and electronic means for reading the image matrix. The image sensor also comprises at least two ambient light sensors arranged on the semiconductor substrate on opposite sides of the image matrix, and configured to capture an ambient light intensity through the fixed lens, and the electronic means is also configured to read the two ambient light sensors and to supply ambient light data and the image data.

Abstract: The method of processing a first digital image by combining the first digital image with a second digital image includes the first digital image being received from a pixel array, and when receiving the first digital image it is converted into a first continuous sequential data stream. The second digital image may be provided in the form of a second continuous sequential data stream, and the first and second digital images may be combined by continuously combining the data in the first and second data stream.

Abstract: A computer navigation device includes a movement sensor and a trigger device activated by a timer. The computer navigation device periodically transmits to a host computer a pre-defined signal corresponding with the signal that would otherwise be generated by the movement sensor on detection of specific movements of the computer navigation device.

Abstract: A pixel structure includes two different photosensitive portions. One portion is shielded from incident light and the signals from both are fed into an op amp so that the differential signal is output as the pixel output, thereby cancelling dark current.

Abstract: The method of processing a first digital image by combining the first digital image with a second digital image includes the first digital image being received from a pixel array, and when receiving the first digital image it is converted into a first continuous sequential data stream. The second digital image may be provided in the form of a second continuous sequential data stream, and the first and second digital images may be combined by continuously combining the data in the first and second data stream.

Abstract: A method is for generating a key from the fixed pattern noise (FPN) of a CMOS image sensor to be used in generating a digital authentication signature. The key may be generated by temporarily disabling the FPN cancellation circuit that is conventionally included in the system, and generating a substantially “black” image to produce a digitized FPN signal. The key may then be generated from characteristics of the FPN, such as by comparing pairs of pixels, for example.

Abstract: The photodiode includes a substrate of a first semiconductor material and an isolating layer of a second semiconductor material. The second semiconductor material is of opposite doping character or type to the first semiconductor material. The isolating layer of the second semiconductor material is implanted with one or more wells of the first and second semiconductor materials and the substrate is separated from the isolating layer of the second semiconductor material by an epitaxial layer of the first semiconductor material.

Abstract: A solid state image sensor has an array of pixels formed on an epitaxial layer on a substrate. Each pixel is relatively large so that it has a high light collecting ability, such as 40–60 ?m, but the pixel photodiode is relatively small so that it has a low capacitance, such as 4–6 ?m. Active elements of the pixel photodiode are formed in wells that are spaced away from the pixel photodiode so that the latter is surrounded by epitaxial material.

Abstract: An active pixel image sensor is formed on a P-type epitaxial layer on a P-type substrate. An active pixel array is in the P-type epitaxial layer. Each pixel includes an N-well functioning as a collection node, and a P-well adjacent the N-well. The P-well includes only NMOS transistors functioning as active elements. The in-pixel transistors cooperate with off-pixel PMOS transistors to form A-D converters.

Abstract: A computer navigation device includes a movement sensor and a trigger device activated by a timer. The computer navigation device periodically transmits to a host computer a pre-defined signal corresponding with the signal that would otherwise be generated by the movement sensor on detection of specific movements of the computer navigation device.

Abstract: A solid state image sensor includes an array of pixels and a corresponding array of microlenses. The positions of the microlenses relative to their corresponding pixels may vary according to the distances of the pixels from a central optical axis of the image sensor to substantially eliminate vignetting of light collected by the microlenses.

Abstract: An active pixel image sensor is formed on a P-type epitaxial layer on a P-type substrate. An active pixel array is in the P-type epitaxial layer. Each pixel includes an N-well functioning as a collection node, and a P-well adjacent the N-well. The P-well includes only NMOS transistors functioning as active elements. The in-pixel transistors cooperate with off-pixel PMOS transistors to form A-D converters.

Abstract: A solid state image sensor has an array of pixels formed on an epitaxial layer on a substrate. Each pixel is relatively large so that it has a high light collecting ability, such as 40-60 &mgr;m, but the pixel photodiode is relatively small so that it has a low capacitance, such as 4-6 &mgr;m. Active elements of the pixel photodiode are formed in wells that are spaced away from the pixel photodiode so that the latter is surrounded by epitaxial material.

Abstract: A method is for generating a key from the fixed pattern noise (FPN) of a CMOS image sensor to be used in generating a digital authentication signature. The key may be generated by temporarily disabling the FPN cancellation circuit that is conventionally included in the system, and generating a substantially “black” image to produce a digitized FPN signal. The key may then be generated from characteristics of the FPN, such as by comparing pairs of pixels, for example.

Abstract: A solid state image sensor includes an array of pixels and a corresponding array of microlenses. The positions of the microlenses relative to their corresponding pixels may vary according to the distances of the pixels from a central optical axis of the image sensor to substantially eliminate vignetting of light collected by the microlenses.