Abstract: A system and method for determining a concentration of total chlorine in dialysis water are provided. The system comprises a main unit housing a KI/water sample chamber and a sodium sulfate chamber. A first electrode pair bridges the two chambers and generates tri-iodide proportional to the amount of total chlorine in the water sample. A second electrode pair in contact with fluid in the KI/water sample detects an amount of tri-iodide generated by the first electrode pair. The system is suitable for use in connection with, or for incorporation into, a water purification system for generating dialysis fluid, and may include a display that alerts the user to stop or prevent a hemodialysis treatment if the total chlorine level exceeds a predetermined level.

Abstract: A system and method for determining a concentration of total chlorine in dialysis water are provided. The system comprises a main unit housing an iodide/water sample chamber and a reducing agent chamber. An electrode pair bridges the two chambers and generates tri-iodide proportional to the amount of total chlorine in the dialysis water. The electrode pair detects the amount of tri-iodide generated in proportion to the amount of active chloride in the dialysis water. The system is suitable for use in connection with, or for incorporation into, a water purification system for generating dialysis fluid, and may include a display that alerts the user to stop or prevent a hemodialysis treatment if the total chlorine level exceeds a predetermined level.

Abstract: A system and method for determining a concentration of total chlorine in dialysis water are provided. The system comprises a main unit housing a KI/water sample chamber and a sodium sulfate chamber. A first electrode pair bridges the two chambers and generates tri-iodide proportional to the amount of total chlorine in the water sample. A second electrode pair in contact with fluid in the KI/water sample detects an amount of tri-iodide generated by the first electrode pair. The system is suitable for use in connection with, or for incorporation into, a water purification system for generating dialysis fluid, and may include a display that alerts the user to stop or prevent a hemodialysis treatment if the total chlorine level exceeds a predetermined level.

Abstract: A computer-implemented method for creating a character for an animation includes modifying a first polygonal geometric structure, having a specific form, to generate a second polygonal geometric structure having another form. The first polygonal geometric structure is associated with a definition of multiple points relative to vertices on the first polygonal geometric structure. The method includes transforming the definition, in multiple progressive refinements, to generate a transformed definition for the second polygonal geometric structure. The method includes storing the transformed definition in association with the second polygonal geometric structure, the transformed definition to be used in generating a geometry for the second polygonal geometric structure. A system includes a character component management module, a transforming module and a database.

Abstract: Certain embodiments of the present invention employ insect-attracting liquid mixtures, solid mixtures, liquid solutions, and solid solutions that include two or more insect-attracting substances or compounds with different physical characteristics that lead to multi-component plumes comprising component plumes with different radii and multiple chemical gradients. Additional embodiments of the present invention include multi-component insect-attracting substances that effectively target two or more different types of insects that together comprise a target group of insects, and additionally target a particular sex, in certain embodiments, or both sexes, in other embodiments, of the target insects. Many of the insect-attracting-substance embodiments of the present invention, upon controlled vaporization or release, create a multi-component, three-dimensional plume that leads insects to the source of the plume along multiple chemical-concentration gradients.

Abstract: In a geolocation system for determining a geolocation of a target emitter, a method for determining the geolocation.

Abstract: In a geolocation system for determining a geolocation of a target emitter, a method for determining the geolocation.

Abstract: The invention provides a method of fabricating a semiconductor device. In one aspect, the method comprises heating a gas mixture comprising chlorohydrocarbon having a general formula of CxHxClx, wherein x=2, 3, or 4, by passing it through a first chamber packed with surface area expanding members heated to a temperature to substantially dissociate the chlorohydrocarbon into chlorine and hydrocarbon. The dissociated chlorohydrocarbon is then passed, together with oxygen, into a second chamber heated to a lesser temperature to form an oxide film on a semiconductor substrate.

Abstract: The invention provides a method of fabricating a semiconductive device. In one aspect, the method comprises heating a gas mixture [225] comprising chlorohydrocarbon having a general formula of CxHxClx, wherein x=2, 3, or 4. The chlorohydrocarbon is heated in a first chamber 210 to a first temperature that substantially disassociates the chlorohydrocarbon. The substantially disassociated chlorohydrocarbon is used to form a film on a semiconductive substrate [235] that is located in a second chamber [215].

Abstract: A trench structure in a wafer of semiconductor material and the method of forming the trench structure are described. The trench structure is formed on a semiconductor wafer that has a top surface of slow oxidization rate—slower than that of other major crystallographic planes of the semiconductor material. The trench is etched into the semiconductor wafer. The trench has substantially vertical trench-sidewalls near the top surface, the vertical trench-sidewalls near the top surface containing crystallographic plane that oxidizes at a rate comparable to that of the top surface. An insulating layer is grown on the top surface and on the trench-sidewalls and on corners where sidewall surfaces approach the top surface, the insulating layer at the corners being substantially thicker than at the sidewall adjacent to the corners. The difference in the oxide thickness is due to the faster oxidizing planes exposed at the corners. Finally, the trench is filled with a dielectric material.

Abstract: A computer-implemented method for creating a character for an animation includes modifying a first polygonal geometric structure, having a specific form, to generate a second polygonal geometric structure having another form. The first polygonal geometric structure is associated with a definition of multiple points relative to vertices on the first polygonal geometric structure. The method includes transforming the definition, in multiple progressive refinements, to generate a transformed definition for the second polygonal geometric structure. The method includes storing the transformed definition in association with the second polygonal geometric structure, the transformed definition to be used in generating a geometry for the second polygonal geometric structure. A system includes a character component management module, a transforming module and a database.

Abstract: Embodiments of the present invention employ insect-attracting liquid mixtures, solid mixtures, liquid solutions, and solid solutions that include two or more insect-attracting substances or compounds with different volatilities. The insect-attracting-substance embodiments of the present invention, upon controlled vaporization or release, create a multi-component, three-dimensional plume that leads insects to the source of the plume along multiple chemical-concentration gradients. The insect-attracting-substance embodiments of the present invention can be incorporated within lures, traps, and other devices and more complex substances related to insect attraction.

Abstract: A flare apparatus for burning combustible gases. A flare tip unit comprises an inner member and an outer member defining an annulus therebetween. The annulus defines an annular gas passage through which combustible gas passes. Air moved by a motive force, preferably steam, passes through the inner member and a steam/air mixture exits an outlet of the inner member. The combustible gas and an air/steam mixture mixes in a premix zone between the inner member outlet and the exit opening of the outer member. The combustible gas/air/steam mixture is ignited for burning in the atmosphere above the exit opening. The flare apparatus may include a plurality of flare tip units.

Abstract: The invention provides a method of fabricating a semiconductive device. In one aspect, the method comprises heating a gas mixture [225] comprising chlorohydrocarbon having a general formula of CxHxClx, wherein x=2, 3, or 4. The chlorohydrocarbon is heated in a first chamber 210 to a first temperature that substantially disassociates the chlorohydro-carbon. The substantially disassociated chlorohydrocarbon is used to form a film on a semiconductive substrate [235] that is located in a second chamber [215].

Abstract: Methods, systems, and computer program products consolidate and manage maintenance services for hardware devices and their associated operating system. A method involves categorizing each hardware device into one of a plurality of device categories, establishing support levels where each support level defines service response criteria, and pricing services based on the support level and/or the device category to which a hardware device is assigned. The method also involves receiving a problem resolution request associated with a hardware device and generating problem case data associated with the problem resolution request and dispatching the problem case data to a single primary service provider regardless of which hardware device is associated with the request.

Abstract: A trench structure in a wafer of semiconductor material and the method of forming the trench structure are described. The trench structure is formed on a semiconductor wafer that has a top surface of slow oxidization rate—slower than that of other major crystallographic planes of the semiconductor material. The trench is etched into the semiconductor wafer. The trench has substantially vertical trench-sidewalls near the top surface, the vertical trench-sidewalls near the top surface containing crystallographic plane that oxidizes at a rate comparable to that of the top surface. An insulating layer is grown on the top surface and on the trench-sidewalls and on corners where sidewall surfaces approach the top surface, the insulating layer at the corners being substantially thicker than at the sidewall adjacent to the corners. The difference in the oxide thickness is due to the faster oxidizing planes exposed at the corners. Finally, the trench is filled with a dielectric material.

Abstract: A trench structure in a wafer of semiconductor material and the method of forming the trench structure are described. The trench structure is formed on a semiconductor wafer that has a top surface of slow oxidization rate—slower than that of other major crystallographic planes of the semiconductor material. The trench is etched into the semiconductor wafer. The trench has substantially vertical trench-sidewalls near the top surface, the vertical trench-sidewalls near the top surface containing crystallographic plane that oxidizes at a rate comparable to that of the top surface. An insulating layer is grown on the top surface and on the trench-sidewalls and on corners where sidewall surfaces approach the top surface, the insulating layer at the corners being substantially thicker than at the sidewall adjacent to the corners. The difference in the oxide thickness is due to the faster oxidizing planes exposed at the corners. Finally, the trench is filled with a dielectric material.

Abstract: A trench structure in a wafer of semiconductor material and the method of forming the trench structure are described. The trench structure is formed on a semiconductor wafer that has a top surface of slow oxidization rate—slower than that of other major crystallographic planes of the semiconductor material. The trench is etched into the semiconductor wafer. The trench has substantially vertical trench-sidewalls near the top surface, the vertical trench-sidewalls near the top surface containing crystallographic plane that oxidizes at a rate comparable to that of the top surface. An insulating layer is grown on the top surface and on the trench-sidewalls and on corners where sidewall surfaces approach the top surface, the insulating layer at the corners being substantially thicker than at the sidewall adjacent to the corners. The difference in the oxide thickness is due to the faster oxidizing planes exposed at the corners. Finally, the trench is filled with a dielectric material.

Abstract: A deployment mechanism for a stowable tarping system includes a hydraulic rotary actuator that is connected to the ends of the bail member of the tarping system. The rotary actuator is generally centrally mounted on the underside of the vehicle body with a pair of half shafts projecting outward toward the sides of the vehicle body. The half shafts are rotationally connected to the bail member so that torque and rotational force generated by the actuator is translated to a pivoting movement of the bail member. The actuator can be integrated into the vehicle hydraulics and can include a control valve system capable of controlling speed and direction of actuation.

Abstract: A deployment mechanism for a stowable tarping system includes a hydraulic rotary actuator that is connected to the ends of the bail member of the tarping system. The rotary actuator is generally centrally mounted on the underside of the vehicle body with a pair of half shafts projecting outward toward the sides of the vehicle body. The half shafts are rotationally connected to the bail member so that torque and rotational force generated by the actuator is translated to a pivoting movement of the bail member. The actuator can be integrated into the vehicle hydraulics and can include a control valve system capable of controlling speed and direction of actuation.