Patents by Inventor Jeffery A. McKee

Jeffery A. McKee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Image sensor with a gated storage node linked to transfer gate
    Patent number: 11282891
    Abstract: A CMOS imaging system with increased charge storage of pixels yet decreased physical size, kTC noise and active area. A storage node is connected to the transfer gate and provides a storage node for a pixel, allowing for kTC noise reduction prior to readout. The pixel may be operated with the shutter gate on during the integration period to increase the amount of time for charge storage by a pixel.
    Type: Grant
    Filed: December 16, 2019
    Date of Patent: March 22, 2022
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Peter P. Altice, Jr., Jeffery A. McKee
  • IMAGE SENSOR WITH A GATED STORAGE NODE LINKED TO TRANSFER GATE
    Publication number: 20200119060
    Abstract: A CMOS imaging system with increased charge storage of pixels yet decreased physical size, kTC noise and active area. A storage node is connected to the transfer gate and provides a storage node for a pixel, allowing for kTC noise reduction prior to readout. The pixel may be operated with the shutter gate on during the integration period to increase the amount of time for charge storage by a pixel.
    Type: Application
    Filed: December 16, 2019
    Publication date: April 16, 2020
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Peter P. ALTICE Jr., Jeffery A. MCKEE
  • Image sensor with a gated storage node linked to transfer gate
    Patent number: 10566379
    Abstract: A CMOS imaging system with increased charge storage of pixels yet decreased physical size, kTC noise and active area. A storage node is connected to the transfer gate and provides a storage node for a pixel, allowing for kTC noise reduction prior to readout. The pixel may be operated with the shutter gate on during the integration period to increase the amount of time for charge storage by a pixel.
    Type: Grant
    Filed: July 11, 2018
    Date of Patent: February 18, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Peter P. Altice, Jr., Jeffery A. McKee
  • IMAGE SENSOR WITH A GATED STORAGE NODE LINKED TO TRANSFER GATE
    Publication number: 20180331133
    Abstract: A CMOS imaging system with increased charge storage of pixels yet decreased physical size, kTC noise and active area. A storage node is connected to the transfer gate and provides a storage node for a pixel, allowing for kTC noise reduction prior to readout. The pixel may be operated with the shutter gate on during the integration period to increase the amount of time for charge storage by a pixel.
    Type: Application
    Filed: July 11, 2018
    Publication date: November 15, 2018
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Peter P. ALTICE, JR., Jeffery A. McKee
  • Image sensor with a gated storage node linked to transfer gate
    Patent number: 10032825
    Abstract: A CMOS imaging system with increased charge storage of pixels yet decreased physical size, kTC noise and active area. A storage node is connected to the transfer gate and provides a storage node for a pixel, allowing for kTC noise reduction prior to readout. The pixel may be operated with the shutter gate on during the integration period to increase the amount of time for charge storage by a pixel.
    Type: Grant
    Filed: June 18, 2013
    Date of Patent: July 24, 2018
    Assignee: SAMSUNG ELECTRONICS, CO., LTD.
    Inventors: Peter P. Altice, Jr., Jeffery A. McKee
  • IMAGE SENSOR WITH A GATED STORAGE NODE LINKED TO TRANSFER GATE
    Publication number: 20130277537
    Abstract: A CMOS imaging system with increased charge storage of pixels yet decreased physical size, kTC noise and active area. A storage node is connected to the transfer gate and provides a storage node for a pixel, allowing for kTC noise reduction prior to readout. The pixel may be operated with the shutter gate on during the integration period to increase the amount of time for charge storage by a pixel.
    Type: Application
    Filed: June 18, 2013
    Publication date: October 24, 2013
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Peter P. Altice, JR., Jeffery A. McKee