Abstract: A method for maximising critical current density (Jc) of high temperature superconducting cuprate materials (HTSC) which comprises controlling the doping state or hole concentration of the materials to be higher than the doping state or hole concentration of the material that provides a maximum superconducting transition temperature (Tc), and to lie at about a value where the normal-state pseudogap reduces to a minimum. Jc is maximised1 at hole concentration p≈0.19. HTSC compounds are also claimed.

Abstract: A method for maximising critical current density (Jc) of high temperature superconducting cuprate materials (HTSC) which comprises controlling the doping state or hole concentration of the materials to be higher than the doping state or hole concentration of the material that provides a maximum superconducting transition temperature (Tc), and to lie at about a value where the normal-state pseudogap reduces to a minimum. Jc is maximised1 at hole concentration p≈0.19. HTSC compounds are also claimed.

Abstract: A method for forming a conductor element comprising a Tl or Hg-based high temperature superconductor (HTSC) material, comprises providing at least one first precursor material within an outer sheath for the conductor element; providing at least one second precursor material within the conductor sheath and separated from the first precursor material(s) by a barrier layer formed from a Noble metal for example between the first and second precursor materials; and heating the conductor sheath containing the precursors to a temperature at which the barrier layer melts to allow the precursor materials to mix and react, or to a temperature at which one of the precursor material(s) diffuses through the barrier layer sufficiently allow the precursor materials to mix and react, to form the Tl or Hg-HTSC material within the outer conductor sheath.