Patents by Inventor Jeffrey B. Miller
Jeffrey B. Miller has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240165429Abstract: Various embodiments are directed to a method of driving an end effector coupled to an ultrasonic drive system of a surgical instrument. The method comprises generating at least one electrical signal. The at least one electrical signal is monitored against a first set of logic conditions. A first response is triggered when the first set of logic conditions is met. A parameter is determined from the at least one electrical signal.Type: ApplicationFiled: December 6, 2023Publication date: May 23, 2024Inventors: Jeffrey D. Messerly, Eitan T. Wiener, Brian T. Noyes, Jeffrey L. Aldridge, James R. Giordano, Robert J. Beetel, III, Daniel J. Abbott, Foster B. Stulen, Matthew C. Miller, Aaron C. Voegele, Jeffrey P. Wiley, Nathan J. Price, Daniel W. Price, Robert L. Koch, JR.
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Patent number: 11929466Abstract: Provided herein are energy storage devices. In some cases, the energy storage devices are capable of being transported on a vehicle and storing a large amount of energy. An energy storage device is provided comprising at least one liquid metal electrode, an energy storage capacity of at least about 1 MWh and a response time less than or equal to about 100 milliseconds (ms).Type: GrantFiled: May 11, 2023Date of Patent: March 12, 2024Assignee: Ambri Inc.Inventors: David J. Bradwell, David A. H. McCleary, Gregory A. Thompson, Allan Blanchard, Jeffrey B. Miller, Ronald Teel, William B. Langhauser, Alexander W. Elliott, Donald R. Sadoway, Michael J. McNeley, Ian Redfern
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Publication number: 20230153829Abstract: A system and method to characterize risk of occupational health hazards and implement control measures to protect workers, with real time evaluations of environmental conditions and exposure concentrations, and platform for use are disclosed herein. The present disclosure provides a system and method for characterizing the risk of various occupational health hazards across various industries, implementing and providing control measures that can be adopted to protect workers in such hazards or situations, and even provide real-time evaluations and recommendations based on existing conditions of environmental conditions to mitigate exposure concentrations of various hazards that may be experienced by or induced upon a worker in an environment.Type: ApplicationFiled: January 3, 2023Publication date: May 18, 2023Inventor: Jeffrey B. Miller
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Publication number: 20220207535Abstract: A task exposure risk assessment system which captures the task, work conditions, and environmental conditions is presented. The system utilizes distributed ledger technology and/or blockchain technology to incorporate confidential information. In this way, unique profiles can be created and shared in real time while maintaining confidentiality of health records and more as relates to providing the implementation of control measures to protect workers from identified occupational health hazards. The system relates generally to a system and method to characterize risk of occupational health hazards and implement control measures to protect workers, with real time evaluations of environmental conditions and exposure concentrations, and platform for use are disclosed herein.Type: ApplicationFiled: March 9, 2022Publication date: June 30, 2022Inventor: Jeffrey B. Miller
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Publication number: 20200380435Abstract: A system and method to characterize risk of occupational health hazards and implement control measures to protect workers, with real time evaluations of environmental conditions and exposure concentrations, and platform for use are disclosed herein. The present disclosure provides a system and method for characterizing the risk of various occupational health hazards across various industries, implementing and providing control measures that can be adopted to protect workers in such hazards or situations, and even provide real-time evaluations and recommendations based on existing conditions of environmental conditions to mitigate exposure concentrations of various hazards that may be experienced by or induced upon a worker in an environment.Type: ApplicationFiled: May 27, 2020Publication date: December 3, 2020Applicant: IAM Creative Concepts, LLCInventor: Jeffrey B. Miller
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Publication number: 20200220033Abstract: A silicon-containing substrate including a top surface which comprises nanostructuring having a plurality of rounded depressions with depths greater than 20 nm.Type: ApplicationFiled: March 13, 2020Publication date: July 9, 2020Inventors: Joanne Yim, Jeffrey B. Miller, Michael Jura, Marcie R. Black, Joanne Forziati, Brian P. Murphy, Lauren Magliozzi
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Patent number: 10629759Abstract: In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.Type: GrantFiled: December 11, 2017Date of Patent: April 21, 2020Assignee: Advanced Silicon Group, Inc.Inventors: Joanne Yim, Jeffrey B. Miller, Michael Jura, Marcie R. Black, Joanne Forziati, Brian P. Murphy, Lauren Magliozzi
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Publication number: 20190296276Abstract: The disclosure provides seals for devices that operate at elevated temperatures and have reactive metal vapors, such as lithium, sodium or magnesium. In some examples, such devices include energy storage devices that may be used within an electrical power grid or as part of a standalone system. The energy storage devices may be charged from an electricity production source for later discharge, such as when there is a demand for electrical energy consumption.Type: ApplicationFiled: March 5, 2019Publication date: September 26, 2019Inventors: David J. Bradwell, David A.H. McCleary, Gregory A. Thompson, Allan Blanchard, Jeffrey B. Miller, Ronald Teel, William B. Langhauser, Alexander W. Elliott, Donald R. Sadoway, Michael J. McNeley, Ian Redfern
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Publication number: 20190221683Abstract: A process is provided for contacting a nanostructured surface. The process may include (a) providing a substrate having a nanostructured material on a surface, (b) passivating the surface on which the nanostructured material is located, (c) screen printing onto the nanostructured surface and (d) firing the screen printing ink at a high temperature. In some embodiments, the nanostructured material compromises silicon. In some embodiments, the nanostructured material includes silicon nanowires. In some embodiments, the nanowires are around 150 nm, 250 nm, or 400 nm in length. In some embodiments, the nanowires have a diameter range between about 30 nm and about 200 nm. In some embodiments, the nanowires are tapered such that the base is larger than the tip. In some embodiments, the nanowires are tapered at an angle of about 1 degree, about 3 degrees, or about 10 degrees. In some embodiments, a high temperature can be approximately 700 C, 750 C, 800 C, or 850 C.Type: ApplicationFiled: March 20, 2019Publication date: July 18, 2019Inventors: Michael Jura, Marcie R. Black, Jeffrey B. Miller, Joanne Yim, Joanne Forziati, Brian P. Murphy, Richard Chleboski
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Patent number: 10269995Abstract: A process is provided for contacting a nanostructured surface. The process may include (a) providing a substrate having a nanostructured material on a surface, (b) passivating the surface on which the nanostructured material is located, (c) screen printing onto the nanostructured surface and (d) firing the screen printing ink at a high temperature. In some embodiments, the nanostructured material compromises silicon. In some embodiments, the nanostructured material includes silicon nanowires. In some embodiments, the nanowires are around 150 nm, 250 nm, or 400 nm in length. In some embodiments, the nanowires have a diameter range between about 30 nm and about 200 nm. In some embodiments, the nanowires are tapered such that the base is larger than the tip. In some embodiments, the nanowires are tapered at an angle of about 1 degree, about 3 degrees, or about 10 degrees. In some embodiments, a high temperature can be approximately 700 C, 750 C, 800 C, or 850 C.Type: GrantFiled: June 14, 2017Date of Patent: April 23, 2019Assignee: Advanced Silicon Group, Inc.Inventors: Michael Jura, Marcie R. Black, Jeffrey B. Miller, Joanne Yim, Joanne Forziati, Brian P. Murphy, Richard Chleboski
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Patent number: 10144115Abstract: A method of forming a chemical mechanical polishing pad polishing layer is provided, including: providing a mold having a base with a negative of a groove pattern; providing a poly side (P) liquid component; providing an iso side (I) liquid component; providing a pressurized gas; providing an axial mixing device; introducing the poly side (P) liquid component, the iso side (I) liquid component and the pressurized gas to the axial mixing device to form a combination; discharging the combination from the axial mixing device at a velocity of 5 to 1,000 m/sec toward the base; allowing the combination to solidify into a cake; deriving the chemical mechanical polishing pad polishing layer from the cake; wherein the chemical mechanical polishing pad polishing layer has a polishing surface with the groove pattern formed into the polishing surface; and wherein the polishing surface is adapted for polishing a substrate.Type: GrantFiled: May 24, 2016Date of Patent: December 4, 2018Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLCInventors: David Michael Veneziale, Bainian Qian, Teresa Brugarolas Brufau, Julia Kozhukh, Yuhua Tong, Jeffrey B. Miller, Diego Lugo, George C. Jacob, Marty W. DeGroot, Andrew Wank, Fengji Yeh
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Patent number: 10105825Abstract: A method of forming a chemical mechanical polishing pad polishing layer is provided, including: providing a mold having a base with a negative of a groove pattern; providing a poly side (P) liquid component; providing an iso side (I) liquid component; providing a pressurized gas; providing an axial mixing device; introducing the poly side (P) liquid component, the iso side (I) liquid component and the pressurized gas to the axial mixing device to form a combination; discharging the combination from the axial mixing device at a velocity of 10 to 300 m/sec toward the base; allowing the combination to solidify into a cake; deriving the chemical mechanical polishing pad polishing layer from the cake; wherein the chemical mechanical polishing pad polishing layer has a polishing surface with the groove pattern formed into the polishing surface; and wherein the polishing surface is adapted for polishing a substrate.Type: GrantFiled: June 26, 2015Date of Patent: October 23, 2018Assignees: Rohm and Haas Electronics Materials CMP Holdings, Inc., Dow Global Technologies LLCInventors: David Michael Veneziale, Bainian Qian, Teresa Brugarolas Brufau, Julia Kozhukh, Yuhua Tong, Jeffrey B. Miller, Diego Lugo, George C. Jacob, Marty W. DeGroot, Andrew Wank, Fengji Yeh
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Patent number: 10092998Abstract: A method of forming a chemical mechanical polishing pad composite polishing layer is provided, including: providing a first polishing layer component of a first continuous non-fugitive polymeric phase having a plurality of periodic recesses; discharging a combination toward the first polishing layer component at a velocity of 5 to 1,000 m/sec, filling the plurality of periodic recesses with the combination; allowing the combination to solidify in the plurality of periodic recesses forming a second non-fugitive polymeric phase giving a composite structure; and, deriving the chemical mechanical polishing pad composite polishing layer from the composite structure, wherein the chemical mechanical polishing pad composite polishing layer has a polishing surface on the polishing side of the first polishing layer component; and wherein the polishing surface is adapted for polishing a substrate.Type: GrantFiled: May 24, 2016Date of Patent: October 9, 2018Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLCInventors: Bainian Qian, Teresa Brugarolas Brufau, Julia Kozhukh, David Michael Veneziale, Yuhua Tong, Diego Lugo, George C. Jacob, Jeffrey B. Miller, Tony Quan Tran, Marc R. Stack, Andrew Wank, Jeffrey James Hendron
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Patent number: 10079322Abstract: In an embodiment of the disclosure, a structure is provided which comprises a silicon substrate and a plurality of necklaces of silicon nanowires which are in direct physical contact with a surface of the silicon substrate, wherein the necklaces cover an area of the silicon substrate.Type: GrantFiled: February 24, 2017Date of Patent: September 18, 2018Assignee: Advanced Silicon Group, Inc.Inventors: Marcie R. Black, Jeffrey B. Miller, Michael Jura, Claire Kearns-McCoy, Joanne Yim, Brian P. Murphy
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Patent number: 10011002Abstract: A method of forming a chemical mechanical polishing pad composite polishing layer is provided, including: providing a first polishing layer component of a first continuous non-fugitive polymeric phase having a plurality of periodic recesses; discharging a combination toward the first polishing layer component at a velocity of 10 to 300 msec, filling the plurality of periodic recesses with the combination; allowing the combination to solidify in the plurality of periodic recesses forming a second non-fugitive polymeric phase giving a composite structure; and, deriving the chemical mechanical polishing pad composite polishing layer from the composite structure, wherein the chemical mechanical polishing pad composite polishing layer has a polishing surface on the polishing side of the first polishing layer component; and wherein the polishing surface is adapted for polishing a substrate.Type: GrantFiled: June 26, 2015Date of Patent: July 3, 2018Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLCInventors: Bainian Qian, Teresa Brugarolas Brufau, Julia Kozhukh, David Michael Veneziale, Yuhua Tong, Diego Lugo, George C. Jacob, Jeffrey B. Miller, Tony Quan Tran, Marc R. Stack, Andrew Wank, Jeffrey James Hendron
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Patent number: 10005172Abstract: The invention is to a method of manufacturing a polishing pad suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The method includes applying droplets of a liquid polymer against a substrate to form a plurality of pores. The liquid polymer contains a nonionic surfactant, the nonionic surfactant has a concentration sufficient to facilitate growth of pores within the liquid polymer and an ionic surfactant has a concentration sufficient to limit growth of the pores within the liquid polymer. Curing the solid polymer forms a polishing pad with final size of the plurality of pores controlled by the concentration of nonionic surfactant and ionic surfactants.Type: GrantFiled: June 26, 2015Date of Patent: June 26, 2018Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLCInventors: Yuhua Tong, Andrew Wank, Diego Lugo, Marc R. Stack, David Michael Veneziale, Marty W. DeGroot, George C. Jacob, Jeffrey B. Miller
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Publication number: 20180169827Abstract: The present invention provides methods of making a chemical mechanical planarization (CMP) polishing layer or pad comprising providing an open mold having a surface with a female topography that generates a flat or shaped CMP polishing layer surface and having held in place thereon one or more endpoint detection window pieces; mixing a liquid isocyanate component with a liquid polyol component to form a solvent free reaction mixture; spraying the reaction mixture onto the open mold while the one or more window pieces is held in place, with each window piece at a predefined location, followed by curing the reaction mixture.Type: ApplicationFiled: December 16, 2016Publication date: June 21, 2018Inventors: Adam P. Smith, Jeffrey James Hendron, Jeffrey Robert Stack, Jeffrey B. Miller
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Publication number: 20180108791Abstract: In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.Type: ApplicationFiled: December 11, 2017Publication date: April 19, 2018Inventors: Joanne Yim, Jeffrey B. Miller, Michael Jura, Marcie R. Black, Joanne Forziati, Brian P. Murphy, Lauren Magliozzi
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Patent number: 9783895Abstract: In an aspect of this disclosure, a method is provided comprising the steps of: (a) providing a silicon-containing substrate, (b) depositing a first metal on the substrate, (c) etching the substrate produced by step (b) using a first etch, and (d) etching the substrate produced by step (c) using a second etch, wherein the second etch is more aggressive towards the deposited metal than the first etch, wherein the result of step (d) comprises silicon nanowires. The method may further comprise, for example, steps (b1) subjecting the first metal to a treatment which causes it to agglomerate and (b2) depositing a second metal.Type: GrantFiled: July 11, 2016Date of Patent: October 10, 2017Assignee: Advanced Silicon Group, Inc.Inventors: Joanne Yim, Jeffrey B. Miller, Michael Jura, Marcie R. Black, Joanne Forziati, Brian P. Murphy, Adam Standley
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Patent number: 9776300Abstract: A chemical mechanical polishing pad is provided, comprising: a chemical mechanical polishing layer having a polishing surface; wherein the chemical mechanical polishing layer is formed by combining (a) a poly side (P) liquid component, comprising: an amine-carbon dioxide adduct; and, at least one of a polyol, a polyamine and a alcohol amine; and (b) an iso side (I) liquid component, comprising: polyfunctional isocyanate; wherein the chemical mechanical polishing layer has a porosity of ?10 vol %; wherein the chemical mechanical polishing layer has a Shore D hardness of <40; and, wherein the polishing surface is adapted for polishing a substrate. Methods of making and using the same are also provided.Type: GrantFiled: May 24, 2016Date of Patent: October 3, 2017Assignees: Rohm and Haas Electronic Materials CMP Holdings Inc., Dow Global Technologies LLCInventors: Bainian Qian, Julia Kozhukh, Teresa Brugarolas Brufau, David Michael Veneziale, Yuhua Tong, Diego Lugo, Jeffrey B. Miller, George C. Jacob, Marty W. DeGroot, Tony Quan Tran, Marc R. Stack, Andrew Wank, Fengji Yeh