Abstract: A scanning probe microscope includes a sensor head adjacent a stage for holding a sample, a scanning actuator for positioning the sensor head relative to the sample, and a probe carried by the sensor head. The probe preferably includes a base connected to the sensor head, a shank extending from the base at an angle offset from perpendicular to the base, and a tip connected to a distal end of the shank for contacting the sample. The angle is preferably in a range of 5 to 20°. The tip is preferably laterally offset from the base to permit viewing of the tip without interference from the shank and the base. Thus, the location of the probe tip relative to the sample may be more easily determined.

Abstract: A method of characterizing the shape of a probe element for a scanning probe microscope including using two test pattern surfaces of known configuration, the first surface having a pointed wedge-shaped tip and the second surface having an hour-glass type cross-section, wherein the surfaces are scanned to generate scan lines having curved transition zones that are geometrically matched in order to generate a probe characteristic representation curve, wherein the probe characteristic representation curve is a graphic representation of the shape of the tip of the probe.

Abstract: A probe tip locator for use in determining the x-axis location and y-axis location of a probe tip of a microscope relative to the locator, the locator comprising a plurality of first reference lines parallel in a first direction, each of the first reference lines representing a predetermined x-axis location of the probe tip; a plurality of sets of parallel encoded bit fields, each one of the sets corresponding to one of the first reference lines; and a plurality of second reference lines parallel in a second direction, each one of the second reference lines intersecting at least one of the first reference lines at an acute angle, such that a scan of a portion of the locator is used to determine the x-axis location and y-axis location of the probe tip relative to the probe tip locator by movement of the probe tip relative to the probe tip locator.

Abstract: Illustratively, the present invention includes a method of integrated circuit manufacturing which includes forming a raised topological feature upon a first substrate. A portion of the raised feature is removed, thereby exposing a cross sectional view of the raised feature with the substrate remaining substantially undamaged. The cross sectional view has a critical dimension. The critical dimension of the cross sectional view is measured using a first measuring instrument. Then the critical dimension is measured using a second measuring instrument. The measurements of the first and second measuring instruments are correlated. Then, using the second measuring instrument, raised features via plurality of second substrates are measured.

Abstract: A triode sputtering system comprises a plasma confining enclosure including a cathode at one end, an anode at the other, and a central plasma supporting portion. Contamination caused by unwanted sputtering of the surfaces of the confining apparatus is substantially eliminated by making the confining enclosure in several, typically four, electrically isolated portions, namely, the cathode support portion, the anode support portion and a pair of plasma support portions. In the structure described there is avoided the relatively large potential difference between the confinement enclosure and the plasma, which occurs predominantly at the anode support end of the confining enclosure of prior art one-piece apparatus. This portion of the apparatus has been found to be the major source of unwanted sputtering therein.

Abstract: An improved Schottky barrier connection is made to a desired region of a silicon wafer by implanting the region with ions to peak at a particular depth; depositing a suitable contact material, such as platinum, over such region; and then heating the wafer to react the platinum and the silicon such that the interface between the platinum-silicide and the silicon penetrates beyond the peak depth of the implant, some of the encountered dopant ions being accumulated at the advancing interface in snowplow fashion. There results a narrowed and concentrated layer of implanted ions localized just below the interface of the silicide and the silicon. The presence of this layer permits conduction in the forward direction at lower applied voltages without substantially degrading the reverse blocking characteristics.