Abstract: A high temperature resist process is combined with microlithographic patterning for the production of materials, such as diamond films, that require a high temperature deposition environment. A conventional polymeric resist process may be used to deposit a pattern of high temperature resist material. With the high temperature resist in place and the polymeric resist removed, a high temperature deposition process may proceed without degradation of the resist pattern. After a desired film of material has been deposited, the high temperature resist is removed to leave the film in the pattern defined by the resist. For diamond films, a high temperature silicon nitride resist can be used for microlithographic patterning of a silicon substrate to provide a uniform distribution of diamond nucleation sites and to improve diamond film adhesion to the substrate.