Abstract: A semiconductor structure that includes an electrically conductive probe that extends from the back side of an integrated circuit to a selected region within the substrate. The structure includes a substrate having first and second surfaces. An active region is disposed in the substrate, and an electrically conductive probe extends from the first surface of the substrate to the active region. Probes can also be constructed to connect one to another and with well regions within the substrate.

Abstract: A semiconductor structure with a backside protective layer and backside probes and a method for constructing the structure. Consistent with one embodiment of the invention, the semiconductor structure comprises a substrate having a first surface, on which a circuit interconnect layer is formed, and a second surface. A protective layer is formed on the second surface of the substrate, wherein the protective layer is non-reactive with gas used to etch the substrate. An electrically conductive probe extends from the protective layer through the substrate to an active region which is disposed in the substrate.

Abstract: A method for etching a flip chip using secondary particle emissions to detect the etch end-point. The method comprises supplying a voltage level to the device and directing an ion beam at a selected area of the back side of the device in the presence of a gas that is reactive with the substrate. While etching, the quantity of secondary particles emitted from the selected area of the device is monitored. When the quantity of emitted secondary particles reaches a predetermined level, the ion beam is stopped and the reactive gas is removed.