Abstract: The present disclosure includes apparatuses, methods, and systems for pre-decoder circuitry. An embodiment includes a memory array including a plurality of memory cells, decoder circuitry coupled to the memory array, wherein the decoder circuitry comprises a p-type transistor having a first gate, a first n-type transistor having a second gate, and a second n-type transistor having a third gate, and pre-decoder circuitry configured to provide a bias condition for the first gate, the second gate, and the third gate to provide a selection signal to one of the plurality of memory cells, wherein the bias condition comprises zero volts for the first gate, the second gate, and the third gate for a positive configuration for the memory cells and a negative voltage for the third gate and zero volts for the first gate and the second gate for a negative configuration for the memory cells.

Abstract: The present disclosure includes apparatuses, methods, and systems for pre-decoder circuitry. An embodiment includes a memory array including a plurality of memory cells, decoder circuitry coupled to the memory array, wherein the decoder circuitry comprises a p-type transistor having a first gate, a first n-type transistor having a second gate, and a second n-type transistor having a third gate, and pre-decoder circuitry configured to provide a bias condition for the first gate, the second gate, and the third gate to provide a selection signal to one of the plurality of memory cells, wherein the bias condition comprises zero volts for the first gate, the second gate, and the third gate for a positive configuration for the memory cells and a negative voltage for the third gate and zero volts for the first gate and the second gate for a negative configuration for the memory cells.

Abstract: Methods, systems, and devices for decoder architecture for memory device are described. An apparatus includes a memory array having a memory cell and an access line coupled with the cell and a decoder having a first stage and a second stage. The decoder supplying a first voltage during a first access operation and a second voltage during a second access operation to the access line. The second stage of the decoder includes a first transistor that supplies the first voltage based on a third voltage at the source of the first transistor exceeding a fourth voltage at a gate of the first transistor and a first threshold voltage. The second stage includes a second transistor that supplies the second voltage based on a fifth voltage at a gate of the second transistor exceeding a sixth voltage at the source of the second transistor and a second threshold voltage.

Abstract: Methods, systems, and devices for decoder architecture for memory device are described. An apparatus includes a memory array having a memory cell and an access line coupled with the cell and a decoder having a first stage and a second stage. The decoder supplying a first voltage during a first access operation and a second voltage during a second access operation to the access line. The second stage of the decoder includes a first transistor that supplies the first voltage based on a third voltage at the source of the first transistor exceeding a fourth voltage at a gate of the first transistor and a first threshold voltage. The second stage includes a second transistor that supplies the second voltage based on a fifth voltage at a gate of the second transistor exceeding a sixth voltage at the source of the second transistor and a second threshold voltage.

Abstract: Methods, systems, and devices for decoder architecture for memory device are described. An apparatus includes a memory array having a memory cell and an access line coupled with the cell and a decoder having a first stage and a second stage. The decoder supplying a first voltage during a first access operation and a second voltage during a second access operation to the access line. The second stage of the decoder includes a first transistor that supplies the first voltage based on a third voltage at the source of the first transistor exceeding a fourth voltage at a gate of the first transistor and a first threshold voltage. The second stage includes a second transistor that supplies the second voltage based on a fifth voltage at a gate of the second transistor exceeding a sixth voltage at the source of the second transistor and a second threshold voltage.

Abstract: Apparatuses and methods for address detection are disclosed herein. An example apparatus it an address filter and an address tracking circuit. The address filter may be configured to receive a first address and to determine whether the first address matches an address of a plurality of addresses associated with the address filter. The address tracking circuit may be coupled to the address filter and configured to store the first address responsive to a determination that the first address matches an address of the plurality of addresses associated with the address filter. The address tracking circuit may further be configured to receive a second address and to change a count associated with the first address based on the second address matching the first address. The address tracking circuit may be configured to selectively provide the first address responsive to the count.

Abstract: The present disclosure relates generally to improved systems and methods for control of one or more timing signals in a memory device. More specifically, the present disclosure relates to configurable duty cycle correction at one or more DQ pins (e.g., data input/output (I/O) pins) of the memory device. For example, the memory device may include a configurable phase splitter and/or selective capacitive loading circuitry implemented to adjust the duty cycle of a timing signal at one or more DQ pins during and/or after manufacture of the memory device. Accordingly, the memory device may include increased flexibility and granularity of control over the one or more timing signals.

Abstract: Apparatuses and methods for address detection are disclosed herein. An example apparatus it an address filter and an address tracking circuit. The address filter may be configured to receive a first address and to determine whether the first address matches an address of a plurality of addresses associated with the address filter. The address tracking circuit may be coupled to the address filter and configured to store the first address responsive to a determination that the first address matches an address of the plurality of addresses associated with the address filter. The address tracking circuit may further be configured to receive a second address and to change a count associated with the first address based on the second address matching the first address. The address tracking circuit may be configured to selectively provide the first address responsive to the count.

Abstract: The present disclosure relates generally to improved systems and methods for control of one or more timing signals in a memory device. More specifically, the present disclosure relates to configurable duty cycle correction at one or more DQ pins (e.g., data input/output (I/O) pins) of the memory device. For example, the memory device may include a configurable phase splitter and/or selective capacitive loading circuitry implemented to adjust the duty cycle of a timing signal at one or more DQ pins during and/or after manufacture of the memory device. Accordingly, the memory device may include increased flexibility and granularity of control over the one or more timing signals.

Abstract: Apparatuses and methods for address detection are disclosed herein. An example apparatus includes an address filter and an address tracking circuit. The address filter may be configured to receive a first address and to determine whether the first address matches an address of a plurality of addresses associated with the address filter. The address tracking circuit may be coupled to the address filter and configured to store the first address responsive to a determination that the first address matches an address of the plurality of addresses associated with the address filter. The address tracking circuit may further be configured to receive a second address and to change a count associated with the first address based on the second address matching the first address. The address tracking circuit may be configured to selectively provide the first address responsive to the count.

Abstract: Apparatuses and methods for address detection are disclosed herein. An example apparatus includes an address filter and an address tracking circuit. The address filter may be configured to receive a first address and to determine whether the first address matches an address of a plurality of addresses associated with the address filter. The address tracking circuit may be coupled to the address filter and configured to store the first address responsive to a determination that the first address matches an address of the plurality of addresses associated with the address filter. The address tracking circuit may further be configured to receive a second address and to change a count associated with the first address based on the second address matching the first address. The address tracking circuit may be configured to selectively provide the first address responsive to the count.

Abstract: A method and apparatus for providing a meshed power and signal bus system on an array type integrated circuit that minimizes the size of the circuit. In a departure from the art, through-holes for the mesh system are placed in the cell array, as well as the peripheral circuits. The power and signal buses of the mesh system run in both vertical and horizontal directions across the array such that all the vertical buses lie in one metal layer, and all the horizontal buses lie in another metal layer. The buses of one layer are connected to the appropriate bus(es) of the other layer using through-holes located in the array. Once connected, the buses extend to the appropriate sense amplifier drivers. The method and apparatus are facilitated by an improved subdecoder circuit implementing a hierarchical word line structure.

Abstract: A method and apparatus for providing a meshed power and signal bus system on an array type integrated circuit that minimizes the size of the circuit. In a departure from the art, through-holes for the mesh system are placed in the cell array, as well as the peripheral circuits. The power and signal buses of the mesh system run in both vertical and horizontal directions across the array such that all the vertical buses lie in one metal layer, and all the horizontal buses lie in another metal layer. The buses of one layer are connected to the appropriate bus(es) of the other layer using through-holes located in the array. Once connected, the buses extend to the appropriate sense amplifier drivers. The method and apparatus are facilitated by an improved subdecoder circuit implementing a hierarchical word line structure.

Abstract: A method and apparatus for providing a meshed power and signal bus system on an array type integrated circuit that minimizes the size of the circuit. In a departure from the art, through-holes for the mesh system are placed in the cell array, as well as the peripheral circuits. The power and signal buses of the mesh system run in both vertical and horizontal directions across the array such that all the vertical buses lie in one metal layer, and all the horizontal buses lie in another metal layer. The buses of one layer are connected to the appropriate bus(es) of the other layer using through-holes located in the array. Once connected, the buses extend to the appropriate sense amplifier drivers. The method and apparatus are facilitated by an improved subdecoder circuit implementing a hierarchical word line structure.

Abstract: A method and apparatus for providing a meshed power and signal bus system on an array type integrated circuit that minimizes the size of the circuit. In a departure from the art, through-holes for the mesh system are placed in the cell array, as well as the peripheral circuits. The power and signal buses of the mesh system run in both vertical and horizontal directions across the array such that all the vertical buses lie in one metal layer, and all the horizontal buses lie in another metal layer. The buses of one layer are connected to the appropriate bus(es) of the other layer using through-holes located in the array. Once connected, the buses extend to the appropriate sense amplifier drivers. The method and apparatus are facilitated by an improved subdecoder circuit implementing a hierarchical word line structure.

Abstract: A method and apparatus for providing a meshed power and signal bus system on an array type integrated circuit that minimizes the size of the circuit. In a departure from the art, through-holes for the mesh system are placed in the cell array, as well as the peripheral circuits. The power and signal buses of the mesh system run in both vertical and horizontal directions across the array such that all the vertical buses lie in one metal layer, and all the horizontal buses lie in another metal layer. The buses of one layer are connected to the appropriate bus(es) of the other layer using through-holes located in the array. Once connected, the buses extend to the appropriate sense amplifier drivers. The method and apparatus are facilitated by an improved subdecoder circuit implementing a hierarchical word line structure.

Abstract: A method and apparatus for providing a meshed power and signal bus system on an array type integrated circuit that minimizes the size of the circuit. In a departure from the art, through-holes for the mesh system are placed in the cell array, as well as the peripheral circuits. The power and signal buses of the mesh system run in both vertical and horizontal directions across the array such that all the vertical buses lie in one metal layer, and all the horizontal buses lie in another metal layer. The buses of one layer are connected to the appropriate bus(es) of the other layer using through-holes located in the array. Once connected, the buses extend to the appropriate sense amplifier drivers. The method and apparatus are facilitated by an improved subdecoder circuit implementing a hierarchical word line structure.

Abstract: A circuit is designed with a first transistor (661) having a current path coupled between a supply terminal (32) and a first output terminal (665). A second transistor has a current path coupled between the first output terminal and a reference terminal. The current path of the second transistor current path has substantially the same width and length as the first transistor current path. A first comparator circuit (679, 685) has first (668) and second (23) input terminals and a second output terminal (681). The first input terminal is coupled to the first output terminal. The first comparator circuit produces a control signal in response to a voltage between the first and second input terminals. A generator circuit (80) receives the control signal and produces an output voltage at the supply terminal.

Abstract: A method and apparatus for providing a meshed power and signal bus system on an array type integrated circuit that minimizes the size of the circuit. In a departure from the art, through-holes for the mesh system are placed in the cell array, as well as the peripheral circuits. The power and signal buses of the mesh system run in both vertical and horizontal directions across the array such that all the vertical buses lie in one metal layer, and all the horizontal buses lie in another metal layer. The buses of one layer are connected to the appropriate bus(es) of the other layer using through-holes located in the array. Once connected, the buses extend to the appropriate sense amplifier drivers. The method and apparatus are facilitated by an improved subdecoder circuit implementing a hierarchical word line structure.

Abstract: A method and apparatus for providing a meshed power and signal bus system on an array type integrated circuit that minimizes the size of the circuit. In a departure from the art, through-holes for the mesh system are placed in the cell array, as well as the peripheral circuits. The power and signal buses of the mesh system run in both vertical and horizontal directions across the array such that all the vertical buses lie in one metal layer, and all the horizontal buses lie in another metal layer. The buses of one layer are connected to the appropriate bus(es) of the other layer using through-holes located in the array. Once connected, the buses extend to the appropriate sense amplifier drivers. The method and apparatus are facilitated by an improved subdecoder circuit implementing a hierarchical word line structure.