Abstract: A lens cleaning system is disclosed herein. The lens cleaning system includes a main case, a lens shield, an actuator means, a cleaning member housing, at least one cleaning member, and a power supply system. The lens cleaning system attaches to a camera to allow for longer shot durations without having the image obstructed by debris. The self-cleaning camera lens system may be particularly designed to be self-cleaning, self-contained, mobile, discrete, easy to use, easily attachable, unobtrusive and at least partially self-maintaining and self-powered.

Abstract: An imaging system may include an image sensor having an array of image pixels. Some image pixels in the array may be provided with spectral response adjustment structures. For example, a plurality of broadband pixels in the array may include spectral response adjustment structures. The spectral response adjustment structures may be configured to narrow the spectral response of the broadband pixels in high light conditions. For example, the spectral response of the broadband pixels may transition from clear to gray, from clear to green, or from yellow to green as the light level increases. The spectral response adjustment structures may, for example, be formed from photochromic materials or electrochromic elements. Processing circuitry in the imaging system may generate a color correction matrix for an image based at least partly on the state of the spectral response adjustment structures.

Abstract: An imaging system may include a camera module with an image sensor having an array of image sensor pixels. The image sensor may include a substrate having an array of photodiodes, an array of microlenses formed over the array of photodiodes, and an array of color filter elements interposed between the array of microlenses and the array of photodiodes. A grid of baffles may be formed over the array of image pixels and may be configured to block stray light from striking the image pixels. The baffles may extend above the microlens array and may be tilted at an angle with respect to the optical axis of the image sensor. The angle at which each baffle is tilted may be proportional to the chief ray angle of an associated microlens. Baffles may be formed from a light-blocking material such as metal, photoresist, carbon, graphite, or other suitable material.

Abstract: An image sensor may have an array of image sensor pixels arranged in unit pixel cells each having at least one modified clear image pixel. Each modified clear image pixel may include a modified clear color filter element formed from a transparent material such as an oxide material that is modified with a colored pigment or colored dye such as yellow pigment. Each unit pixel cell may include one or more color pixels of other colors such as red pixels, blue pixels, and green pixels. Image signals such as yellow image signals from the modified clear pixels may be processed along with other color image signals such as red image signals and blue image signals to generate standard red, green, and blue image data. Image processing operations may include chroma demosaicing or point filtering of the image signals from the modified clear image pixels.

Abstract: An image sensor may have an array of image sensor pixels having varying light collecting areas. The light collecting area of each image pixel may vary with respect to other image pixels due to varied microlens sizes and varied color filter element sizes throughout the array. The light collecting area may vary within unit pixel cells and the variability of the light collecting areas of pixels within each pixel cell may depend on the location of the pixel cell in the pixel array. Each unit pixel cell may include at least one clear pixel having a light collecting area that is smaller than the light collecting areas of other single color pixels in the unit pixel cell.

Abstract: Pixel arrays are provided for image sensors that have barriers between color filters in an array of color filters. Color filter barriers may be formed from a transparent or semi-transparent material. Color filter barriers may be formed from a low refractive index material. Color filters may be etched and color filter barrier material may be formed in the etched regions of the color filters. If desired, a layer of color filter barrier material may be etched to form open regions and color filter material may be formed in the open regions of the color filter barrier material. An image sensor may be a front-side illuminated image sensor or a back-side illuminated image sensor.

Abstract: An imaging system may include an image sensor having an array of image pixels. Some image pixels in the array may be provided with spectral response adjustment structures. For example, a plurality of broadband pixels in the array may include spectral response adjustment structures. The spectral response adjustment structures may be configured to narrow the spectral response of the broadband pixels in high light conditions. For example, the spectral response of the broadband pixels may transition from clear to gray, from clear to green, or from yellow to green as the light level increases. The spectral response adjustment structures may, for example, be formed from photochromic materials or electrochromic elements. Processing circuitry in the imaging system may generate a color correction matrix for an image based at least partly on the state of the spectral response adjustment structures.

Abstract: An imaging system may include a camera module with an image sensor having an array of image sensor pixels. The image sensor may include a substrate having an array of photodiodes, an array of microlenses formed over the array of photodiodes, and an array of color filter elements interposed between the array of microlenses and the array of photodiodes. A grid of baffles may be formed over the array of image pixels and may be configured to block stray light from striking the image pixels. The baffles may extend above the microlens array and may be tilted at an angle with respect to the optical axis of the image sensor. The angle at which each baffle is tilted may be proportional to the chief ray angle of an associated microlens. Baffles may be formed from a light-blocking material such as metal, photoresist, carbon, graphite, or other suitable material.

Abstract: An imaging system may include a camera module with an image sensor having an array of image sensor pixels. The image sensor may include a substrate having an array of photodiodes, an array of microlenses formed over the array of photodiodes, and an array of color filter elements interposed between the array of microlenses and the array of photodiodes. The color filter elements may be separated from each other by color filter barriers. Each color filter barrier may include an upper portion formed from dielectric material and a lower portion formed from metal. The metal portion of each color filter barrier may form a crosstalk reduction structure that prevents stray light from passing from one pixel to an adjacent pixel. The color filter barriers may have a grid shape with an array of openings. The color filter elements may be deposited in the openings.

Abstract: An image sensor may have an array of image sensor pixels arranged in unit pixel cells each having at least one modified clear image pixel. Each modified clear image pixel may include a modified clear color filter element formed from a transparent material such as an oxide material that is modified with a colored pigment or colored dye such as yellow pigment. Each unit pixel cell may include one or more color pixels of other colors such as red pixels, blue pixels, and green pixels. Image signals such as yellow image signals from the modified clear pixels may be processed along with other color image signals such as red image signals and blue image signals to generate standard red, green, and blue image data. Image processing operations may include chroma demosaicing or point filtering of the image signals from the modified clear image pixels.

Abstract: An image sensor may have an array of image sensor pixels having varying light collecting areas. The light collecting area of each image pixel may vary with respect to other image pixels due to varied microlens sizes and varied color filter element sizes throughout the array. The light collecting area may vary within unit pixel cells and the variability of the light collecting areas of pixels within each pixel cell may depend on the location of the pixel cell in the pixel array. Each unit pixel cell may include at least one clear pixel having a light collecting area that is smaller than the light collecting areas of other single color pixels in the unit pixel cell.

Abstract: Pixel arrays are provided for image sensors that have barriers between color filters in an array of color filters. Color filter barriers may be formed from a transparent or semi-transparent material. Color filter barriers may be formed from a low refractive index material. Color filters may be etched and color filter barrier material may be formed in the etched regions of the color filters. If desired, a layer of color filter barrier material may be etched to form open regions and color filter material may be formed in the open regions of the color filter barrier material. An image sensor may be a front-side illuminated image sensor or a back-side illuminated image sensor.

Abstract: An imaging system may include an image sensor configured to image materials at near field imaging ranges from the image sensor. Near field imaging ranges may be on the scale of 1-10 pixel sizes from the image sensor. The materials being imaged may be fluorescent materials that emit radiation at fluorescent wavelengths when the materials are exposed to radiation at excitation wavelengths. The image sensor may include color filter materials that block radiation at excitation wavelengths while transmitting radiation at fluorescent wavelengths. The image sensor may include light guides that reduce cross-talk between pixels and improve localization of emitted radiation, thereby allowing the image sensor to determine which pixel(s) is (are) located beneath the materials being imaged. The light guides may include may include sloped sidewalls and may include reflective sidewalls, which may improve radiation collection (e.g., efficiency) and localization of emitted radiation.

Abstract: A method and structure for optimizing an optical lithography illumination source may include a shaped diffractive optical element (DOE) interposed between the illuminator and a lens during the exposure of a photoresist layer over a semiconductor wafer. The DOE may, in some instances, increase depth of focus, improve the normalized image log-slope, and improve pattern fidelity. The DOE is customized for the particular pattern to be exposed. Description and depiction of a specific DOE for a specific pattern is provided. Additionally, a pupilgram having a particular pattern, and methods for providing a light output which forms the pupilgram, are disclosed.

Abstract: Systems and methods for near-field photolithography utilize surface plasmon resonances to enable imaging of pattern features that exceed the diffraction limit. An example near-field photolithography system comprises a plasmon superlens template comprising a plurality of opaque features to be imaged onto photosensitive material and a metal plasmon superlens. The opaque features and the metal superlens are separated by a polymer spacer layer. Light propagates through the superlens template to form an image of the opaque features on the other side of the superlens. An intermediary layer comprising solid or liquid material is interposed between the superlens and a photoresist-coated semiconductor wafer to reduce damage resulting from contact between the superlens template and the photoresist-coated semiconductor wafer.

Abstract: In various embodiments, a photolithography system comprises a spatial light modulator and a plasmonic lens array. The spatial light modulator comprises a plurality of pixels, and the plasmonic lens array comprises a plurality of plasmonic lenses. The pixels are optically aligned with the plasmonic lenses such that light from the pixels is substantially focused by the lenses. The plasmonic lenses each comprise an optical aperture and a plurality of metal features proximal to the aperture. The metal features have a dimension and arrangement configured to couple optical energy incident on one side of the plasmonic lens into plasmon excitation supported by the metal and to reemit optical energy through the aperture.

Abstract: A method and structure for optimizing an optical lithography illumination source comprises a shaped diffractive optical element (DOE) interposed between the illuminator and a lens during the exposure of a photoresist layer over a semiconductor wafer. The DOE may, in some instances, increase depth of focus, improve the normalized image log-slope, and improve pattern fidelity. The DOE is customized for the particular pattern to be exposed. Descriptions and depictions of specific DOE's are provided. Additionally, a pupilgram having a particular pattern, and methods for forming the pupilgram, are discussed.

Abstract: Methods and apparatuses for controlling characteristics of radiation directed to a microlithographic workpiece are disclosed. An apparatus in accordance with one embodiment of the invention includes a source of radiation positioned to direct a radiation beam having an amplitude distribution, a phase distribution, and a polarization distribution, toward a workpiece. An adaptive structure can be positioned in a path of the radiation beam and can have a plurality of independently controllable and selectively radiation transmissible elements, each configured to change at least one of the amplitude distribution, the phase distribution and the polarization distribution of the radiation beam. A controller can be operatively coupled to the adaptive structure to direct the elements of the adaptive structure to change from one state to any of a plurality of available other states.

Abstract: A method and structure for optimizing an optical lithography illumination source comprises a shaped diffractive optical element (DOE) interposed between the illuminator and a lens during the exposure of a photoresist layer over a semiconductor wafer. The DOE may, in some instances, increase depth of focus, improve the normalized image log-slope, and improve pattern fidelity. The DOE is customized for the particular pattern to be exposed. Description and depiction of a specific DOE for a specific pattern is provided. Additionally, a pupilgram having a particular pattern, and methods for providing a light output which forms the pupilgram, are disclosed.

Abstract: Methods and apparatuses for controlling characteristics of radiation directed to a microlithographic workpiece are disclosed. An apparatus in accordance with one embodiment of the invention includes a source of radiation positioned to direct a radiation beam having an amplitude distribution, a phase distribution, and a polarization distribution, toward a workpiece. An adaptive structure can be positioned in a path of the radiation beam and can have a plurality of independently controllable and selectively radiation transmissible elements, each configured to change at least one of the amplitude distribution, the phase distribution and the polarization distribution of the radiation beam. A controller can be operatively coupled to the adaptive structure to direct the elements of the adaptive structure to change from one state to any of a plurality of available other states.