Abstract: A magnetic write head for magnetic data recording. The magnetic write head has a write pole with a magnetic anisotropy induced by an angled, directional ion milling of a seed layer. The magnetic anisotropy is such that a magnetic easy axis of magnetization is oriented substantially parallel with the air bearing surface (ABS) of the write head. This orientation of the easy axis of magnetization increases the write speed and data rate of the write head by increasing the speed with which the magnetization of the write pole can switch from one direction to another writing.

Abstract: A magnetoresistive sensor having a self biased free layer. The free layer is constructed upon an underlayer that has been treated by a surface texturing process that configures the underlayer with an anisotropic roughness that induces a magnetic anisotropy in the free layer. The treated layer underlying the free layer can be a spacer layer sandwiched between the free layer and pinned layer or can be a separate underlayer formed opposite the spacer layer. Alternatively, the texturing of an underlayer can be used to induce a magnetic anisotropy in a bias layer that is separated from the free layer by an orthogonal coupling layer. This self biasing of the free layer induced by texturing can also be used in conjunction with biasing from a hard-bias structure.

Abstract: A magnetoresistive sensor having a hard bias layer with an engineered magnetic anisotropy in a direction substantially parallel with the medium facing surface. The hard bias layer may be constructed of CoPt, CoPtCr or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to induce anisotropic roughness on its surface for example in form of oriented ripples or facets. The anisotropic roughness induces a uniaxial magnetic anisotropy substantially parallel to the medium facing surface in the hard magnetic bias layers deposited there over.

Abstract: A magnetoresistive sensor having a hard magnetic pinning layer with an engineered magnetic anisotropy in a direction substantially perpendicular to the medium facing surface. The hard magnetic pinning layer may be constructed of CoPt, CoPtCr, or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to induce anisotropic roughness for example in form of oriented ripples or facets oriented along a direction parallel to the medium facing surface. The anisotropic roughness induces a strong uniaxial magnetic anisotropy substantially perpendicular to the medium facing surface in the hard magnetic pinning layer deposited there over.

Abstract: A magnetoresistive sensor having an in stack bias layer with an engineered magnetic anisotropy in a direction parallel with the medium facing surface. The in-stack bias layer may be constructed of CoPt, CoPtCr or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to form anisotropic roughness in form of oriented ripples or facets. The anisotropic roughness induces a uniaxial magnetic anisotropy substantially parallel to the medium facing surface in the hard magnetic in-stack bias layer deposited thereover.

Abstract: A current perpendicular to plane dual giant magnetoresistive sensor (dual CPP GMR sensor) that prevents spin torque noise while having high dR/R performance. The sensor has a design that maximizes the GMR effect (dR/R) by providing a pinned layer structure that maximizes the positive GMR contribution of the AP2 layer (or magnetic layer closest to the spacer layer) while minimizing the negative GMR contribution of the AP1 layer (or layer furthest from the spacer layer). The pinned layer structure includes an AP1 layer that includes a thin CoFe layer that is exchange coupled with an IrMn or IrMnCr AFM layer and has two or more Co layers with a spin blocking layer sandwiched between them. The use of the Co layers and the spin blocking layer in the AP1 layer minimizes the negative contribution of the AP1 layer. The AP2 layer has a plurality of CoFe layers with nano-layers such as Cu sandwiched between the CoFe layers.

Abstract: Current-perpendicular-to-the-plane (CPP), current-in-to-the-plane (CIP), and tunnel valve type sensors are provided having an antiparallel (AP) coupled free layer structure, an in-stack biasing structure which stabilizes the AP coupled free layer structure and a nonmagnetic spacer layer formed between the in-stack biasing layer and the AP coupled free layer structure. The AP coupled free layer structure has a first AP coupled free layer adjacent to the nonmagnetic spacer layer, a second AP coupled free layer, and an antiparallel coupling (APC) layer formed between the first and the second AP coupled free layers. The net moment of the AP coupled free layer structure has an antiparallel edge magnetostatic coupling with the in-stack biasing structure. At the same time, the first AP coupled free layer has an antiparallel exchange coupling with the second AP coupled free layer.

Abstract: A semiconductor slider including an integral spin valve transistor (SVT) having a read width of 250 nm or less disposed on a monolithic semiconductor. substrate, useful in magnetic data storage applications. The monolithic slider may also include other magnetic and semiconductor transistor structures and is fabricated in a single process using standard thin-film processing steps. The SVT includes a sensor stack having a top surface and including a first ferromagnetic (FM) layer in contact with and forming a Schottky barrier at the monolithic semiconductor substrate, a FM shield layer disposed over the sensor stack and in electrical contact with the top surface thereof, a SVT emitter terminal coupled to the FM shield, a SVT collector terminal coupled to the substrate and a SVT base terminal coupled to the first FM layer. The sensor stack may include a spin valve (SV) stack or a tunnel valve (TV) stack, for example.

Abstract: Embodiments of the present invention include information services, methods and systems to facilitate gathering and management of information by home users and professional users of information gathering, processing, and distribution services, and user interfaces through which users communicate with information services. In one embodiment of the present invention, a central information gathering, processing, and distribution service provides a simple, but robust and highly functional, interface to remote home users and professional users to allow the home users and professional users to continuously receive updated information gleaned from continuous searching of the Internet and other information sources by the information service. The interface allows users to define, refine, and stably store interests that define information searches continuously carried out, on behalf of the user, by the information gathering, processing, and distribution service.

Abstract: Disposable sterile coverings impervious to bacteria and viruses, and related methods, are disclosed, the coverings temporarily insulating the operative base surface of the diaphragm of a traditional high quality, repeat use stethoscope. Each covering is discarded after a single use, thereby preventing cross bacterial and viral infections, including those caused by highly resistant bacteria, between patients on which the same stethoscope is successively used.

Abstract: A compositionally-graded, strain relaxed Si1-xGex (0<x<1) material having a surface roughness of less than 1 nm. In a preferred aspect, the compositionally-graded material is Si1-xGex (0<x<0.3) material having a threading dislocation density <1×105 defects/cm2 of surface area. The compositionally-graded material is readily formed by vapor deposition or other suitable technique, in which the temperature is selectively modulated during the growth process, optionally with modulation of germanium precursor flow rate, to produce a low surface roughness, low threading dislocation defect density graded silicon-germanium film suitable for forming strained heterostructures such as Si1-xGex/Si.

Abstract: A semiconductor slider including an integral spin valve transistor (SVT) having a read width of 250 nm or less disposed on a monolithic semiconductor substrate, useful in magnetic data storage applications. The monolithic slider may also include other magnetic and semiconductor transistor structures and is fabricated in a single process using standard thin-film processing steps. The SVT includes a sensor stack having a top surface and including a first ferromagnetic (FM) layer in contact with and forming a Schottky barrier at the monolithic semiconductor substrate, a FM shield layer disposed over the sensor stack and in electrical contact with the top surface thereof, a SVT emitter terminal coupled to the FM shield, a SVT collector terminal coupled to the substrate and a SVT base terminal coupled to the first FM layer. The sensor stack may include a spin valve (SV) stack or a tunnel valve (TV) stack, for example.

Abstract: A telephony system for a premises includes lines operably coupled to telephony devices, and trunks operably coupled to diverse networks (such as the PSTN network and an Internet-based VOIP network). A voice router includes a switch matrix operably coupled between the lines and trunks. In processing an outgoing voice call placed on a particular line, switch control means controls the switch matrix to connect the particular line to at least two trunks (preferably in accordance with at least one routing table). The switch control means analyzes DTMF digit data (corresponding to DTMF digit tone(s) generated on the line) to determine a classification tag for the outgoing voice call, and disconnects the particular line from at least one trunk based upon the classification tag to enable the outgoing voice call to proceed over another one of the at least two trunks.

Abstract: The invention relates to methods to screen for agents that interact with member of the vitronectrin receptor family, &agr;v&bgr;3 integrin and agents obtainable by said methods.

Abstract: A CPP magnetoresistive sensor with a spacer layer made of a heterogeneous material, which is composed of conductive grains within a highly resistive matrix, has a high resistance. The conductive grains are typically made of a conductive element or alloy that can operate as a GMR spacer material. The highly resistive matrix is typically made of a highly resistive or insulating element, alloy or compound that will hinder the flow of electrons. The sensing electrical current is passed through the conductive grains, which are typically made of the same material as GMR spacers, so the GMR is maintained even though the overall resistance is increased.

Abstract: A semiconductor slider including an integral spin valve transistor (SVT) having a read width of 250 nm or less disposed on a monolithic semiconductor substrate, useful in magnetic data storage applications. The monolithic slider may also include other magnetic and semiconductor transistor structures and is fabricated in a single process using standard thin-film processing steps. The SVT includes a sensor stack having a top surface and including a first ferromagnetic (FM) layer in contact with and forming a Schottky barrier at the monolithic semiconductor substrate, a FM shield layer disposed over the sensor stack and in electrical contact with the top surface thereof, a SVT emitter terminal coupled to the FM shield, a SVT collector terminal coupled to the substrate and a SVT base terminal coupled to the first FM layer. The sensor stack may include a spin valve (SV) stack or a tunnel valve (TV) stack, for example.

Abstract: A spin valve transistor (SVT) for a magnetic head and a method of making the same are described. A slider of a disk drive is formed of a semiconductor material, such as silicon. A free layer is formed over the semiconductor material and a magnetic pinned layer is formed over a portion of the free layer. The free layer has an edge that is substantially flush with an air bearing surface (ABS) between the magnetic head and the disk, whereas the magnetic pinned layer has an edge that is recessed away from the ABS. Advantageously, since the free layer serves as a flux guiding structure for the sensor, the sensor has a thinner profile at the ABS to accommodate higher recording densities.

Abstract: A magnetic sensor which detects an external magnetic field with the aid of a ferromagnetic free layer having a magnetic moment responsive to the external magnetic field. The magnetic sensor has an antiferromagnetic layer which is magnetically exchange-coupled to the free layer to produce an exchange bias field He which acts on the free layer to bias its magnetic moment along a certain orientation such as the transverse direction. The additional exchange bias field He is used in balancing a total transverse internal magnetic field Ht which is due to other fields generated by the sensor itself. The value of exchange bias field He is set, e.g., by selecting a certain thickness and a certain composition of the antiferromagnetic layer. The magnetic sensor of the invention can also have a non-magnetic spacer layer interposed between the free layer and the antiferromagnetic layer or be in contact with the free layer.

Abstract: The present invention is a delivery system for safety injecting solid waste particles, including mixed wastes, into a molten salt bath for destruction by the process of molten salt oxidation. The delivery system includes a feeder system and an injector that allow the solid waste stream to be accurately metered, evenly dispersed in the oxidant gas, and maintained at a temperature below incineration temperature while entering the molten salt reactor.

Abstract: The present invention is a delivery system for safety injecting solid waste particles, including mixed wastes, into a molten salt bath for destruction by the process of molten salt oxidation. The delivery system includes a feeder system and an injector that allow the solid waste stream to be accurately metered, evenly dispersed in the oxidant gas, and maintained at a temperature below incineration temperature while entering the molten salt reactor.