Patents by Inventor Jeffrey S. Haviland

Jeffrey S. Haviland has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5811910
    Abstract: A mechanical shock sensor including a diaphragm suspended about its edge to an elevated pedestal and a pattern of piezoelectric material attached to the diaphragm surface. A proof mass is attached beneath the diaphragm surface and centered along a vertical axis passing through the diaphragm and the concentric piezoelectric materials. Electrical conductors are attached to the first and second concentric electrically conductive layers on piezoelectric material and are connected to a circuit capable of responding to the piezoelectric signals developed thereby.
    Type: Grant
    Filed: January 30, 1997
    Date of Patent: September 22, 1998
    Inventors: Graham P. Cameron, Jeffrey S. Haviland
  • Patent number: 5317251
    Abstract: A peak current detecting and non-volatile storage device has a substrate having a hole. Individual magnetic field detecting elements are located on the substrate and are radially displaced from the hole. A conductor extends through the hole. The magnetic field detecting elements are magnetized to a predetermined state. Current carried by the conductor creates a magnetic field around the conductor which alters the predetermined state of magnetization of the magnetic field detecting devices. Various readout techniques may be used to determine the altered state of magnetization which is representative of the magnetic field and may be easily related to the current.
    Type: Grant
    Filed: November 23, 1992
    Date of Patent: May 31, 1994
    Assignee: Honeywell Inc.
    Inventors: Jeffrey S. Haviland, Donald R. Krahn, Robert W. Schneider
  • Patent number: 5260225
    Abstract: A method for fabricating an integrated infrared sensitive bolometer having a polycrystalline element whereby an oxide region deposited on silicon nitride covered with a first polysilicon layer which is etched to provide a location for a bolometer element. A second polysilicon layer is deposited and doped to achieve a desired temperature coefficient of resistivity of 1 to 2%/.degree.C. The second polysilicon layer forms an IR sensitive element over the oxide region. Openings are etched in the IR sensitive element to permit an etchant to remove the oxide region resulting in the sensitive element being suspended over a cavity.
    Type: Grant
    Filed: November 9, 1992
    Date of Patent: November 9, 1993
    Assignee: Honeywell Inc.
    Inventors: Michael S. Liu, Jeffrey S. Haviland, Cheisan J. Yue