Abstract: A memory device may be configured to receive a command to access a block of memory that is one of multiple blocks of memory included in the memory device. The memory device may be configured to receive a cryptographic signature associated with the command. The memory device may be configured to enable or disable access to the block of memory based on the command and based on the cryptographic signature. The memory device may be capable of separately restricting access to each individual block of the multiple blocks.

Abstract: A memory device may be configured to perform an erase verify read operation to read from a plurality of access lines of a block of memory. The memory device may be configured to determine, based on performing the erase verify read operation, a quantity of access lines for which a corresponding page has been programmed, wherein each access line provides access to one or more pages of memory. The memory device may be configured to identify a most recently programmed page of the block of memory based on the determined quantity of access lines.

Abstract: A memory device to calibrate voltages used to read a group of memory cells. For example, the memory device measures first signal and noise characteristics of a group of memory cells by reading the group of memory cells at first test voltages that are separated from each other by a first voltage interval. An estimate of a read level of the group of memory cells is determined based on the first signal and noise characteristics. The memory device then measures second signal and noise characteristics of the group of memory cells by reading the group of memory cells at second test voltages that are separated from each other by a second voltage interval that is smaller than the first voltage interval. An optimized read voltage for the read level is computed from the second signal and noise characteristics.

Abstract: A memory device to calibrate voltages used to read a group of memory cells. For example, the memory device measures first signal and noise characteristics of a group of memory cells by reading the group of memory cells at first test voltages that are separated from each other by a first voltage interval. An estimate of a read level of the group of memory cells is determined based on the first signal and noise characteristics. The memory device then measures second signal and noise characteristics of the group of memory cells by reading the group of memory cells at second test voltages that are separated from each other by a second voltage interval that is smaller than the first voltage interval. An optimized read voltage for the read level is computed from the second signal and noise characteristics.

Abstract: A memory device to calibrate voltages used to read a group of memory cells. For example, the memory device measures first signal and noise characteristics of a group of memory cells by reading the group of memory cells at first test voltages that are separated from each other by a first voltage interval. An estimate of a read level of the group of memory cells is determined based on the first signal and noise characteristics. The memory device then measures second signal and noise characteristics of the group of memory cells by reading the group of memory cells at second test voltages that are separated from each other by a second voltage interval that is smaller than the first voltage interval. An optimized read voltage for the read level is computed from the second signal and noise characteristics.