Patents by Inventor Jeffrey W. Anthis

Jeffrey W. Anthis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods For Manufacturing High Dielectric Constant Films
    Publication number: 20120270409
    Abstract: Provided are methods for depositing a cerium doped hafnium containing high-k dielectric film on a substrate. The reagents of specific methods include hafnium tetrachloride, an organometallic complex of cerium and water.
    Type: Application
    Filed: April 2, 2012
    Publication date: October 25, 2012
    Applicant: Applied Materials, Inc.
    Inventors: Hyungjun Kim, Woo-Hee Kim, Min-Kyu Kim, Steven Hung, Atif Noori, David Thompson, Jeffrey W. Anthis
  • Precursors and Methods for the Atomic Layer Deposition of Manganese
    Publication number: 20120231164
    Abstract: Methods and precursors are provided for deposition of elemental manganese films on surfaces using metal coordination complexes comprising an eta-3-bound monoanionic four-electron donor ligands selected from amidinate, mixed ene-amido and allyl, or eta-2 bound amidinate ligand. The ligands are selected from amidinate, ene-amido, and allyl.
    Type: Application
    Filed: March 8, 2012
    Publication date: September 13, 2012
    Applicant: Applied Materials, Inc.
    Inventors: David Thompson, Jeffrey W. Anthis
  • In Situ Vapor Phase Surface Activation Of SiO2
    Publication number: 20120202357
    Abstract: Methods for preparing a substrate for a subsequent film formation process are described. Methods for preparing a substrate for a subsequent film formation process, without immersion in an aqueous solution, are also described. A process is described that includes disposing a substrate into a process chamber, the substrate having a thermal oxide surface with substantially no reactive surface terminations. The thermal oxide surface is exposed to a partial pressure of water above the saturated vapor pressure at a temperature of the substrate to convert the dense thermal oxide with substantially no reactive surface terminations to a surface with hydroxyl surface terminations. This can occur in the presence of a Lewis base such as ammonia.
    Type: Application
    Filed: July 27, 2011
    Publication date: August 9, 2012
    Applicant: Applied Materials, Inc.
    Inventors: Tatsuya E. Sato, David Thompson, Jeffrey W. Anthis, Vladimir Zubkov, Steven Verhaverbeke, Roman Gouk, Maitreyee Mahajani, Patricia M. Liu, Malcolm J. Bevan
  • Nitrogen-Containing Ligands And Their Use In Atomic Layer Deposition Methods
    Publication number: 20120108062
    Abstract: Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising nitrogen-containing ligands are provided. Also provided are nitrogen-containing ligands useful in the methods of the invention and metal coordination complexes comprising these ligands.
    Type: Application
    Filed: July 25, 2011
    Publication date: May 3, 2012
    Applicant: Applied Materials, Inc.
    Inventors: Jeffrey W. Anthis, David Thompson
  • Bisamineazaallylic Ligands And Their Use In Atomic Layer Deposition Methods
    Publication number: 20120107502
    Abstract: Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising bisamineazaallylic ligands are provided. Also provided are bisamineazaallylic ligands useful in the methods of the invention and metal coordination complexes comprising these ligands.
    Type: Application
    Filed: July 25, 2011
    Publication date: May 3, 2012
    Applicant: Applied Materials, Inc.
    Inventors: David Thompson, Jeffrey W. Anthis