Patents by Inventor Jei-Li Ho

Jei-Li Ho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Lift-off structure for substrate of a photoelectric device and the method thereof
    Patent number: 8575004
    Abstract: The present invention related to a lift-off structure adapted to a substrate having a photoelectric device, the structure comprising: a buffer layer, forming on the substrate; an upper sacrificial layer, forming on the buffer layer; an etch stop layer, forming on the upper sacrificial layer, and the photoelectric device structure forming on the etch stop layer.
    Type: Grant
    Filed: October 14, 2011
    Date of Patent: November 5, 2013
    Assignee: Institute of Nuclear Energy Research Atomic Energy Council, Executive Yuan
    Inventors: Yu-Li Tsai, Chih-Hung Wu, Jei-Li Ho, Chao-Huei Huang, Min-De Yang
  • Lift-off structure for substrate of a photoelectric device and method thereof
    Patent number: 8497421
    Abstract: A lift-off structure for substrate of a photoelectric device and method thereof, which making it possible to enable an etching solution to flow through not only external etch channel but also internal etch channel to etch a sacrificial layer in order to increase the overall etching speed and decrease the overall time of lifting a substrate off.
    Type: Grant
    Filed: September 20, 2011
    Date of Patent: July 30, 2013
    Assignee: Institute of Nuclear Energy Research Atomic Energy Council, Executive Yuan
    Inventors: Yu-Li Tsai, Chih-Hung Wu, Jei-Li Ho
  • LIFT-OFF STRUCTURE FOR SUBSTRATE OF A PHOTOELECTRIC DEVICE AND METHOD THEREOF
    Publication number: 20130048058
    Abstract: A lift-off structure for substrate of a photoelectric device and method thereof, which making it possible to enable an etching solution to flow through not only external etch channel but also internal etch channel to etch a sacrificial layer in order to increase the overall etching speed and decrease the overall time of lifting a substrate off.
    Type: Application
    Filed: September 20, 2011
    Publication date: February 28, 2013
    Applicant: Institute of Nuclear Energy Research Atomic Energy Council, Executive Yuan
    Inventors: YU-LI TSAI, Chih-Hung Wu, Jei-Li Ho
  • LIFT-OFF STRUCTURE FOR SUBSTRATE OF A PHOTOELECTRIC DEVICE AND THE METHOD THEREOF
    Publication number: 20120273815
    Abstract: The present invention related to a lift-off structure adapted to a substrate having a photoelectric device, the structure comprising: a buffer layer, forming on the substrate; an upper sacrificial layer, forming on the buffer layer; an etch stop layer, forming on the upper sacrificial layer, and the photoelectric device structure forming on the etch stop layer.
    Type: Application
    Filed: October 14, 2011
    Publication date: November 1, 2012
    Applicant: Institute of Nuclear Energy Research Atomic Energy Council, Executive Yuan
    Inventors: YU-LI TSAI, Chih-Hung Wu, Jei-Li Ho, Chao-Huei Huang, Min-De Yang