Patents by Inventor Jen-Chau Wu
Jen-Chau Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140131760Abstract: A flip-chip LED including a light emitting structure, a first dielectric layer, a first metal layer, a second metal layer, and a second dielectric layer is provided. The light emitting structure includes a first conductive layer, an active layer, and a second conductive layer. The active layer is disposed on the first conductive layer, and the second conductive layer is disposed on the active layer. The first metal layer is disposed on the light emitting structure and is contact with the first conductive layer, and part of the first metal layer is disposed on the first dielectric layer. The second metal layer is disposed on the light emitting structure and is in contact with the second conductive layer, and part of the second metal layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the first dielectric layer. The first conductive layer includes a rough surface so as to improve a light extraction efficiency.Type: ApplicationFiled: January 16, 2014Publication date: May 15, 2014Applicant: EPISTAR CORPORATIONInventors: Tzer-Perng CHEN, Jen-Chau WU, Chuan-Cheng TU, Yuh-Ren SHIEH
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Publication number: 20130313594Abstract: An optoelectronic element includes an optoelectronic unit having a first top surface; a first metal layer on the first top surface; a first transparent structure surrounding the optoelectronic unit and exposing the first top surface; and a first contact layer on the first transparent structure, including a connective part electrically connected with the first metal layer.Type: ApplicationFiled: May 2, 2013Publication date: November 28, 2013Applicant: EPISTAR CORPORATIONInventors: Cheng-Nan HAN, Tsung-Xian Lee, Min-Hsun Hsieh, Hung-Hsuan Chen, Hsin-Mao Liu, Hsing-Chao Chen, Ching-San Tao, Chih-Peng Ni, Tzer-Perng Chen, Jen-Chau Wu, Masafumi Sano, Chih-Ming Wang
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Publication number: 20110291145Abstract: An optoelectronic element includes an optoelectronic unit having a first top surface, a first bottom surface opposite to the first top surface, and a lateral surface between the first top surface and the first bottom surface; a first transparent structure covering the lateral surface and exposing the first top surface of the optoelectronic unit; a first insulating layer on the first top surface and the first transparent structure; a second insulating layer on the first insulating layer; a first opening through the first insulating layer and the second insulating layer; and a first conductive layer on the second insulating layer and electrically connecting to the optoelectronic unit via the first opening.Type: ApplicationFiled: August 9, 2011Publication date: December 1, 2011Applicant: Epistar CorporationInventors: Cheng-Nan Han, Tsung-Xian Lee, Min-Hsun Hsieh, Hung-Hsuan Chen, Hsin-Mao Liu, Hsing-Chao Chen, Ching-San Tao, Chih-Peng Ni, Tzer-Perng Chen, Jen-Chau Wu
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Patent number: 8049242Abstract: An optoelectronic device such as a light-emitting diode chip is disclosed. It includes a substrate, a multi-layer epitaxial structure, a first metal electrode layer, a second metal electrode layer, a first bonding pad and a second bonding pad. The multi-layer epitaxial structure on the transparent substrate comprises a semiconductor layer of a first conductive type, an active layer, and a semiconductor layer of a second conductive type. The first bonding pad and the second bonding pad are on the same level. Furthermore, the first metal electrode layer can be patterned so the current is spread to the light-emitting diode chip uniformly.Type: GrantFiled: July 13, 2010Date of Patent: November 1, 2011Assignee: Epistar CorporationInventors: Jin-Ywan Lin, Jen-Chau Wu, Chih-Chiang Lu, Wei-Chih Peng, Ching-Pu Tai, Shih-I Chen
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Publication number: 20100276719Abstract: An optoelectronic device such as a light-emitting diode chip is disclosed. It includes a substrate, a multi-layer epitaxial structure, a first metal electrode layer, a second metal electrode layer, a first bonding pad and a second bonding pad. The multi-layer epitaxial structure on the transparent substrate comprises a semiconductor layer of a first conductive type, an active layer, and a semiconductor layer of a second conductive type. The first bonding pad and the second bonding pad are on the same level. Furthermore, the first metal electrode layer can be patterned so the current is spread to the light-emitting diode chip uniformly.Type: ApplicationFiled: July 13, 2010Publication date: November 4, 2010Inventors: Jin-Ywan LIN, Jen-Chau WU, Chih-Chiang LU, Wei-Chih PENG, Ching-Pu TAI, Shih-I CHEN
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Patent number: 7777240Abstract: An optoelectronic device such as a light-emitting diode chip is disclosed. It includes a substrate, a multi-layer epitaxial structure, a first metal electrode layer, a second metal electrode layer, a first bonding pad and a second bonding pad. The multi-layer epitaxial structure on the transparent substrate comprises a semiconductor layer of a first conductive type, an active layer, and a semiconductor layer of a second conductive type. The first bonding pad and the second bonding pad are on the same level. Furthermore, the first metal electrode layer can be patterned so the current is spread to the light-emitting diode chip uniformly.Type: GrantFiled: December 23, 2008Date of Patent: August 17, 2010Assignee: Epistar CorporationInventors: Jin-Ywan Lin, Jen-Chau Wu, Chih-Chiang Lu, Wei-Chih Peng, Ching-Pu Tai, Shih-I Chen
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Patent number: 7745833Abstract: The invention provides a semiconductor light emitting device and the fabrication method of the same. The semiconductor light emitting device according to the invention comprises a multi-layer light emitting structure and a heat conducting layer. The multi-layer light emitting structure comprises a first layer. The first layer has an exposed first surface, and it also has a first thermal conductivity. The heat conducting layer is formed on and covers the first layer. The heat conducting layer has a second thermal conductivity, wherein the second thermal conductivity is greater than the first thermal conductivity.Type: GrantFiled: August 1, 2005Date of Patent: June 29, 2010Assignee: Epistar CorporationInventors: Cheng-Chung Yang, Shao-Kun Ma, Chuan-Cheng Tu, Jen-Chau Wu
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Patent number: 7704760Abstract: A method of making a light emitting diode (LED) is disclosed. The LED of the present invention comprises a semiconductor layer of a first polarity, an active layer, and a semiconductor layer of a second polarity stacked from bottom to up, wherein a stacked structure at least composed of the active layer and the semiconductor layer of the second polarity have a side with a wave-shape border in a top view of the LED and/or at least one valley, thereby increasing the efficiency of emitting the light to the outside of the LED.Type: GrantFiled: August 29, 2008Date of Patent: April 27, 2010Assignee: Epistar CorporationInventors: Chuan-Cheng Tu, Pao-I Huang, Jen-Chau Wu
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Publication number: 20090108286Abstract: An optoelectronic device such as a light-emitting diode chip is disclosed. It includes a substrate, a multi-layer epitaxial structure, a first metal electrode layer, a second metal electrode layer, a first bonding pad and a second bonding pad. The multi-layer epitaxial structure on the transparent substrate comprises a semiconductor layer of a first conductive type, an active layer, and a semiconductor layer of a second conductive type. The first bonding pad and the second bonding pad are on the same level. Furthermore, the first metal electrode layer can be patterned so the current is spread to the light-emitting diode chip uniformly.Type: ApplicationFiled: December 23, 2008Publication date: April 30, 2009Applicant: EPISTAR CORPORATIONInventors: Jin-Ywan Lin, Jen-Chau Wu, Chih-Chiang Lu, Wei-Chih Peng, Ching-Pu Tai, Shih-I Chen
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Publication number: 20090029492Abstract: A method of making a light emitting diode (LED) is disclosed. The LED of the present invention comprises a semiconductor layer of a first polarity, an active layer, and a semiconductor layer of a second polarity stacked from bottom to up, wherein a stacked structure at least composed of the active layer and the semiconductor layer of the second polarity have a side with a wave-shape border in a top view of the LED and/or at least one valley, thereby increasing the efficiency of emitting the light to the outside of the LED.Type: ApplicationFiled: August 29, 2008Publication date: January 29, 2009Applicant: Epistar CorporationInventors: Chuan-Cheng Tu, Pao-I Huang, Jen-Chau Wu
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Patent number: 7435604Abstract: A method of making a light emitting diode (LED) is disclosed. The LED of the present invention comprises a semiconductor layer of a first polarity, an active layer, and a semiconductor layer of a second polarity stacked from bottom to up, wherein a stacked structure at least composed of the active layer and the semiconductor layer of the second polarity have a side with a wave-shape border in a top view of the LED and/or at least one valley, thereby increasing the efficiency of emitting the light to the outside of the LED.Type: GrantFiled: October 4, 2004Date of Patent: October 14, 2008Assignee: Epistar CorporationInventors: Chuan-Cheng Tu, Pao-I Huang, Jen-Chau Wu
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Publication number: 20080230791Abstract: An optoelectronic device such as a light-emitting diode chip is disclosed. It includes a substrate, a multi-layer epitaxial structure, a first metal electrode layer, a second metal electrode layer, a first bonding pad and a second bonding pad. The multi-layer epitaxial structure on the transparent substrate comprises a semiconductor layer of a first conductive type, an active layer, and a semiconductor layer of a second conductive type. The first bonding pad and the second bonding pad are on the same level. Furthermore, the first metal electrode layer can be patterned so the current is spread to the light-emitting diode chip uniformly.Type: ApplicationFiled: March 19, 2008Publication date: September 25, 2008Applicant: EPISTAR CORPORATIONInventors: Jin-Ywan LIN, Jen-Chau Wu, Chih-Chiang LU, Wei-Chih Peng, Jing-Fu Dai, Shih-Yi Chen
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Patent number: 7391061Abstract: A light emitting diode and the method of the same are provided. The light emitting diode includes a substrate, a thermal spreading layer, a connecting layer and an epitaxial structure. The substrate is selected from a transparent substrate or a non-transparent substrate, which corresponds to different materials of the connecting layers respectively. The thermal spreading layer, configured to improve the thermal conduction of the light emitting diode, is selected from diamond, impurity-doped diamond or diamond-like materials.Type: GrantFiled: December 22, 2005Date of Patent: June 24, 2008Assignee: Epistar CorporationInventors: Yuh-Ren Shieh, Jen-Chau Wu, Chuan-Cheng Tu
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Patent number: 7341879Abstract: A point source light emitting-diode (LED) comprises a substrate, an epitaxy structure, a first electrode, an isolation layer, a bonding layer, a contact layer, and a connection bridge. The epitaxy structure is located on the substrate, and the substrate has a pattern including a light emitting area located on the light-emitting surface of the epitaxy structure. The first electrode is located on the substrate, and the isolation layer is located on the epitaxy structure adjacent to the first electrode. The contact layer is located on the first electrode, and the bonding layer is located on one portion of the isolation layer. The connection bridge with a width less than one half of the diameter of the light emitting area is located on the other portion of the isolation layer, thereby connecting the contact layer and the bonding layer.Type: GrantFiled: July 7, 2006Date of Patent: March 11, 2008Assignee: Epistar CorporationInventors: Tzu-Ying Yen, Han-Tsun Lai, Jen-Chau Wu, Chung-Cheng Tu
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Publication number: 20070278496Abstract: A light emitting diode is disclosed. The light emitting diode includes a substrate, a thermal spreading layer disposed on the bottom of the substrate, a soldering layer disposed on the bottom of the thermal spreading layer, a barrier layer disposed between the thermal spreading layer and the soldering layer, and a light emitting layer disposed on top of the substrate.Type: ApplicationFiled: April 11, 2007Publication date: December 6, 2007Inventors: Yuh-Ren Shieh, Chuan-Cheng Tu, Jen-Chau Wu
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Publication number: 20070126016Abstract: A flip-chip LED including a light emitting structure, a first dielectric layer, a first metal layer, a second metal layer, and a second dielectric layer is provided. The light emitting structure includes a first conductive layer, an active layer, and a second conductive layer. The active layer is disposed on the first conductive layer, and the second conductive layer is disposed on the active layer. The first metal layer is disposed on the light emitting structure and is contact with the first conductive layer, and part of the first metal layer is disposed on the first dielectric layer. The second metal layer is disposed on the light emitting structure and is in contact with the second conductive layer, and part of the second metal layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the first dielectric layer. The first conductive layer includes a rough surface so as to improve a light extraction efficiency.Type: ApplicationFiled: February 13, 2007Publication date: June 7, 2007Applicant: EPISTAR CORPORATIONInventors: Tzer-Perng CHEN, Jen-Chau WU
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Patent number: 7192797Abstract: A flip-chip LED including a light emitting structure, a first dielectric layer, a first metal layer, a second metal layer, and a second dielectric layer is provided. The light emitting structure includes a first conductive layer, an active layer, and a second conductive layer. The active layer is disposed on the first conductive layer, and the second conductive layer is disposed on the active layer. The first metal layer is disposed on the light emitting structure and is contact with the first conductive layer, and part of the first metal layer is disposed on the first dielectric layer. The second metal layer is disposed on the light emitting structure and is in contact with the second conductive layer, and part of the second metal layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the first dielectric layer.Type: GrantFiled: October 12, 2005Date of Patent: March 20, 2007Assignee: Epistar CorporationInventors: Chuan-Cheng Tu, Jen-Chau Wu, Yuh-Ren Shieh
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Publication number: 20060289875Abstract: A light emitting diode and the method of the same are provided. The light emitting diode includes a substrate, a thermal spreading layer, a connecting layer and an epitaxial structure. The substrate is selected from a transparent substrate or a non-transparent substrate, which corresponds to different materials of the connecting layers respectively. The thermal spreading layer, configured to improve the thermal conduction of the light emitting diode, is selected from diamond, impurity-doped diamond or diamond-like materials.Type: ApplicationFiled: December 22, 2005Publication date: December 28, 2006Inventors: Yuh-Ren Shieh, Jen-Chau Wu, Chuan-Cheng Tu
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Patent number: 7154149Abstract: This invention relates to an ESD protection configuration and method for light emitting diodes (LED), including an LED an LED, having a p-n junction and connected to a circuit substrate, the circuit substrate having two p-type substrates and one n-type substrate therein; a first ESD protection configuration, built-in the circuit substrate and including a first resistor, a first capacitor and a first diode that are connected in series and then engage a parallel connection with the LED, wherein the first diode has a p-node connected to an n-node of the LED; and a second ESD protection configuration, built-in the circuit substrate and including a second resistor, a second capacitor and a second diode that are connected in series and then engage a parallel connection with the LED and the first ESD protection configuration, wherein the second diode has a p-node connected to the p-node of the LED, whereby such a configuration absorbs and removes ESD induced upon human contact and prevents the LED from burning to efType: GrantFiled: March 4, 2004Date of Patent: December 26, 2006Assignee: Epistar CorporationInventors: Jen-Chau Wu, Cheng-Chung Yang, Rong-Yih Hwang, Chuan-Cheng Tu
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Publication number: 20060284191Abstract: A light emitting diode includes a light emitting structure, a heterojunction, a first electrode, and a second electrode. The light emitting structure has a top surface where the first electrode and the second electrode are positioned thereon. The heterojunction is in the light emitting structure and includes a first semiconductor layer and a second semiconductor layer of differently doped types. The first semiconductor layer has a boundary and is electrically connected to the first electrode. The first electrode includes at least two wire-bonding pads. A smallest horizontal distance (d) between a center of the first electrode and the boundary is in a range of about 89 ?m to 203 ?m. The second electrode is electrically connected to the second semiconductor layer and includes an outer arm, which peripherally encompasses the top surface.Type: ApplicationFiled: June 15, 2006Publication date: December 21, 2006Inventors: Cheng Yang, Charng-Shyang Jong, Chuan-Cheng Tu, Kau-Feng Jan, Jen-Chau Wu