Patents by Inventor Jen-Jiang Lee

Jen-Jiang Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for device metallization by forming a contact plug and interconnect using a silicide/nitride process
    Patent number: 4994410
    Abstract: A semiconductor device, device metallization, and method are described. The device metallization, which is especially designed for submicron contact openings, includes titanium silicide to provide a low resistance contact to a device region, titanium nitride and sputtered tungsten to provide a diffusion barrier, etched back chemical vapor deposited tungsten for planarization, and aluminum or an aluminum alloy for interconnection.
    Type: Grant
    Filed: February 16, 1990
    Date of Patent: February 19, 1991
    Assignee: Motorola, Inc.
    Inventors: Shih W. Sun, Jen-Jiang Lee
  • Process for forming high purity thin films
    Patent number: 4987102
    Abstract: A method is described for the formation of high purity thin films on a semiconductor substrate. In the preferred embodiment of the invention a thin film is formed on a semiconductor substrate in a plasma enhanced chemical vapor deposition system. Energized silicon ions are obtained by mass analysis and are accelerated into a hydrogen-free plasma. A reaction occurs between energized atoms within the plasma and the energized silicon ions resulting in the deposition of a thin film on the semiconductor substrate.
    Type: Grant
    Filed: December 4, 1989
    Date of Patent: January 22, 1991
    Assignee: Motorola, Inc.
    Inventors: Bich-Yen Nguyen, Jen-Jiang Lee, Hoang K. Nguyen, Young Limb, Philip J. Tobin
  • Device metallization, device and method
    Patent number: 4926237
    Abstract: A semiconductor device, device metallization, and method are described. The device metallization, which is especially designed for submicron contact openings, includes titanium silicide to provide a low resistance contact to a device region, titanium nitride and sputtered tungsten to provide a diffusion barrier, etched back chemical vapor deposited tungsten for planarization, and aluminum or an aluminum alloy for interconnection.
    Type: Grant
    Filed: April 4, 1988
    Date of Patent: May 15, 1990
    Assignee: Motorola, Inc.
    Inventors: Shih W. Sun, Jen-Jiang Lee