Patents by Inventor Jeng-Dar Ko
Jeng-Dar Ko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9601474Abstract: A wafer-leveled chip packaging method, comprising the steps of: providing a wafer; attaching at least one first chip to the wafer; forming a first insulating layer on the wafer; forming a plurality of first conductive vias penetrating the first insulating layer, wherein parts of the first conductive vias are electrically connected with the first chip; forming a conductive pattern layer on the surface of the first insulating layer wherein the conductive pattern layer is electrically connected with the first conductive vias; forming a plurality of through holes penetrating the wafer; filling a second insulating layer in the through holes; and forming a plurality of second conductive vias in the second insulating layer, wherein the second conductive vias are electrically connected with the first conductive vias.Type: GrantFiled: June 15, 2015Date of Patent: March 21, 2017Assignee: Invensas CorporationInventors: Shou-Lung Chen, Ching-Wen Hsaio, Yu-Hua Chen, Jeng-Dar Ko, Chih-Ming Tzeng, Jyh-Rong Lin, Shan-Pu Yu
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Publication number: 20150364457Abstract: A wafer-leveled chip packaging method, comprising the steps of: providing a wafer; attaching at least one first chip to the wafer; forming a first insulating layer on the wafer; forming a plurality of first conductive vias penetrating the first insulating layer, wherein parts of the first conductive vias are electrically connected with the first chip; forming a conductive pattern layer on the surface of the first insulating layer wherein the conductive pattern layer is electrically connected with the first conductive vias; forming a plurality of through holes penetrating the wafer; filling a second insulating layer in the through holes; and forming a plurality of second conductive vias in the second insulating layer, wherein the second conductive vias are electrically connected with the first conductive vias.Type: ApplicationFiled: June 15, 2015Publication date: December 17, 2015Applicant: Invensas CorporationInventors: Shou-Lung Chen, Ching-Wen Hsaio, Yu-Hua Chen, Jeng-Dar Ko, Chih-Ming Tzeng, Jyh-Rong Lin, Shan-Pu Yu
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Patent number: 9059181Abstract: A wafer-leveled chip packaging method, comprising the steps of: providing a wafer; attaching at least one first chip to the wafer; forming a first insulating layer on the wafer; forming a plurality of first conductive vias penetrating the first insulating layer, wherein parts of the first conductive vias are electrically connected with the first chip; forming a conductive pattern layer on the surface of the first insulating layer wherein the conductive pattern layer is electrically connected with the first conductive vias; forming a plurality of through holes penetrating the wafer; filling a second insulating layer in the through holes; and forming a plurality of second conductive vias in the second insulating layer, wherein the second conductive vias are electrically connected with the first conductive vias.Type: GrantFiled: November 18, 2013Date of Patent: June 16, 2015Assignee: Invensas CorporationInventors: Shou-Lung Chen, Ching-Wen Hsaio, Yu-Hua Chen, Jeng-Dar Ko, Chih-Ming Tzeng, Jyh-Rong Lin, Shan-Pu Yu
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Publication number: 20140217587Abstract: A wafer-leveled chip packaging method, comprising the steps of: providing a wafer; attaching at least one first chip to the wafer; forming a first insulating layer on the wafer; forming a plurality of first conductive vias penetrating the first insulating layer, wherein parts of the first conductive vias are electrically connected with the first chip; forming a conductive pattern layer on the surface of the first insulating layer wherein the conductive pattern layer is electrically connected with the first conductive vias; forming a plurality of through holes penetrating the wafer; filling a second insulating layer in the through holes; and forming a plurality of second conductive vias in the second insulating layer, wherein the second conductive vias are electrically connected with the first conductive vias.Type: ApplicationFiled: November 18, 2013Publication date: August 7, 2014Applicant: Invensas CorporationInventors: Shou-Lung Chen, Ching-Wen Hsaio, Yu-Hua Chen, Jeng-Dar Ko, Chih-Ming Tzeng, Jyh-Rong Lin, Shan-Pu Yu
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Patent number: 8587091Abstract: A wafer-leveled chip packaging method, comprising the steps of: providing a wafer; attaching at least one first chip to the wafer; forming a first insulating layer on the wafer; forming a plurality of first conductive vias penetrating the first insulating layer, wherein parts of the first conductive vias are electrically connected with the first chip; forming a conductive pattern layer on the surface of the first insulating layer wherein the conductive pattern layer is electrically connected with the first conductive vias; forming a plurality of through holes penetrating the wafer; filling a second insulating layer in the through holes; and forming a plurality of second conductive vias in the second insulating layer, wherein the second conductive vias are electrically connected with the first conductive vias.Type: GrantFiled: June 26, 2012Date of Patent: November 19, 2013Assignee: Invensas CorporationInventors: Shou-Lung Chen, Ching-Wen Hsiao, Yu-Hua Chen, Jeng-Dar Ko, Chih-Ming Tzeng, Jyh-Rong Lin, Shan-Pu Yu
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Patent number: 8314482Abstract: This invention relates to a wafer-leveled chip packaging method, comprising the steps of: providing a wafer; attaching at least one first chip to the wafer; forming a first insulating layer on the wafer; forming a plurality of first conductive vias penetrating the first insulating layer, wherein parts of the first conductive vias are electrically connected with the first chip; forming a conductive pattern layer on the surface of the first insulating layer wherein the conductive pattern layer is electrically connected with the first conductive vias; forming a plurality of through holes penetrating the wafer; filling a second insulating layer in the through holes; and forming a plurality of second conductive vias in the second insulating layer, wherein the second conductive vias are electrically connected with the first conductive vias.Type: GrantFiled: October 5, 2007Date of Patent: November 20, 2012Assignee: Invensas CorporationInventors: Shou-Lung Chen, Ching-Wen Hsiao, Yu-Hua Chen, Jeng-Dar Ko, Chih-Ming Tzeng, Jyh-Rong Lin, Shan-Pu Yu
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Publication number: 20120267765Abstract: A wafer-leveled chip packaging method, comprising the steps of: providing a wafer; attaching at least one first chip to the wafer; forming a first insulating layer on the wafer; forming a plurality of first conductive vias penetrating the first insulating layer, wherein parts of the first conductive vias are electrically connected with the first chip; forming a conductive pattern layer on the surface of the first insulating layer wherein the conductive pattern layer is electrically connected with the first conductive vias; forming a plurality of through holes penetrating the wafer; filling a second insulating layer in the through holes; and forming a plurality of second conductive vias in the second insulating layer, wherein the second conductive vias are electrically connected with the first conductive vias.Type: ApplicationFiled: June 26, 2012Publication date: October 25, 2012Applicant: Industrial Technology Research InstituteInventors: Shou-Lung CHEN, Ching-Wen Hsiao, Yu-Hua Chen, Jeng-Dar Ko, Chih-Ming Tzeng, Jyh-Rong Lin, Shan-Pu Yu
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Patent number: 7838333Abstract: The present invention discloses an electronic device package and a method of the package. In particular, an electronic device package and a method of the package suitable for a bumpless electronic device package with enhanced electrical performance and heat-dissipation efficiency are disclosed. The method comprises: providing a substrate having a plurality of vias and a plurality of electronic devices; forming a gluing layer on a surface of the substrate and fixing the electronic devices on the gluing layer, wherein the electronic devices have I/O units aligned with the vias respectively; forming a plurality of fixing layers in the gaps between the electronic devices; trenching a plurality of openings aligned with the vias respectively in the fixing layer; forming a plurality of metallic conductive units in the vias, the openings and part of the surface of the substrate; and forming a passivation layer over the other surface of the substrate.Type: GrantFiled: November 3, 2009Date of Patent: November 23, 2010Assignee: Industrial Technology Research InstituteInventors: Shou-Lung Chen, Ching-Wen Hsiao, Yu-Hua Chen, Jeng-Dar Ko, Jyh-Rong Lin
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Publication number: 20100112757Abstract: The present invention discloses an electronic device package and a method of the package. In particular, an electronic device package and a method of the package suitable for a bumpless electronic device package with enhanced electrical performance and heat-dissipation efficiency are disclosed. The method comprises: providing a substrate having a plurality of vias and a plurality of electronic devices; forming a gluing layer on a surface of the substrate and fixing the electronic devices on the gluing layer, wherein the electronic devices have I/O units aligned with the vias respectively; forming a plurality of fixing layers in the gaps between the electronic devices; trenching a plurality of openings aligned with the vias respectively in the fixing layer; forming a plurality of metallic conductive units in the vias, the openings and part of the surface of the substrate; and forming a passivation layer over the other surface of the substrate.Type: ApplicationFiled: November 3, 2009Publication date: May 6, 2010Applicant: Industrial Technology Research InstituteInventors: Shou-Lung CHEN, Ching-Wen Hsiao, Yu-Hua Chen, Jeng-Dar Ko, Jyh-Rong Lin
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Patent number: 7632707Abstract: The present invention discloses an electronic device package and a method of the package. In particular, an electronic device package and a method of the package suitable for a bumpless electronic device package with enhanced electrical performance and heat-dissipation efficiency are disclosed. The method comprises: providing a substrate having a plurality of vias and a plurality of electronic devices; forming a gluing layer on a surface of the substrate and fixing the electronic devices on the gluing layer, wherein the electronic devices have I/O units aligned with the vias respectively; forming a plurality of fixing layers in the gaps between the electronic devices; trenching a plurality of openings aligned with the vias respectively in the fixing layer; forming a plurality of metallic conductive units in the vias, the openings and part of the surface of the substrate; and forming a passivation layer over the other surface of the substrate.Type: GrantFiled: November 9, 2005Date of Patent: December 15, 2009Assignee: Industrial Technology Research InstituteInventors: Shou-Lung Chen, Ching-Wen Hsiao, Yu-Hua Chen, Jeng-Dar Ko, Jyh-Rong Lin
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Patent number: 7528009Abstract: This invention relates to a wafer-leveled chip packaging method, comprising the steps of: providing a wafer; attaching at least one first chip to the wafer; forming a first insulating layer on the wafer; forming a plurality of first conductive vias penetrating the first insulating layer, wherein parts of the first conductive vias are electrically connected with the first chip; forming a conductive pattern layer on the surface of the first insulating layer wherein the conductive pattern layer is electrically connected with the first conductive vias; forming a plurality of through holes penetrating the wafer; filling a second insulating layer in the through holes; and forming a plurality of second conductive vias in the second insulating layer, wherein the second conductive vias are electrically connected with the first conductive vias.Type: GrantFiled: April 19, 2007Date of Patent: May 5, 2009Assignee: Industrial Technology Research InstituteInventors: Shou-Lung Chen, Ching-Wen Hsiao, Yu-Hua Chen, Jeng-Dar Ko, Chih-Ming Tzeng, Jyh-Rong Lin, Shan-Pu Yu
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Publication number: 20080029870Abstract: This invention relates to a wafer-leveled chip packaging method, comprising the steps of: providing a wafer; attaching at least one first chip to the wafer; forming a first insulating layer on the wafer; forming a plurality of first conductive vias penetrating the first insulating layer, wherein parts of the first conductive vias are electrically connected with the first chip; forming a conductive pattern layer on the surface of the first insulating layer wherein the conductive pattern layer is electrically connected with the first conductive vias; forming a plurality of through holes penetrating the wafer; filling a second insulating layer in the through holes; and forming a plurality of second conductive vias in the second insulating layer, wherein the second conductive vias are electrically connected with the first conductive vias.Type: ApplicationFiled: October 5, 2007Publication date: February 7, 2008Applicant: Industrial Technology Research InstituteInventors: Shou-Lung Chen, Ching-Wen Hsiao, Yu-Hua Chen, Jeng-Dar Ko, Chih-Ming Tzeng, Jyh-Rong Lin, Shan-Pu Yu
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Patent number: 7294920Abstract: This invention relates to a wafer-leveled chip packaging method, comprising the steps of: providing a wafer; attaching at least one first chip to the wafer; forming a first insulating layer on the wafer; forming a plurality of first conductive vias penetrating the first insulating layer, wherein parts of the first conductive vias are electrically connected with the first chip; forming a conductive pattern layer on the surface of the first insulating layer wherein the conductive pattern layer is electrically connected with the first conductive vias; forming a plurality of through holes penetrating the wafer; filling a second insulating layer in the through holes; and forming a plurality of second conductive vias in the second insulating layer, wherein the second conductive vias are electrically connected with the first conductive vias.Type: GrantFiled: July 22, 2005Date of Patent: November 13, 2007Assignee: Industrial Technology Research InstituteInventors: Shou-Lung Chen, Ching-Wen Hsiao, Yu-Hua Chen, Jeng-Dar Ko, Chih-Ming Tzeng, Jyh-Rong Lin, Shan-Pu Yu
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Publication number: 20070197018Abstract: This invention relates to a wafer-leveled chip packaging method, comprising the steps of: providing a wafer; attaching at least one first chip to the wafer; forming a first insulating layer on the wafer; forming a plurality of first conductive vias penetrating the first insulating layer, wherein parts of the first conductive vias are electrically connected with the first chip; forming a conductive pattern layer on the surface of the first insulating layer wherein the conductive pattern layer is electrically connected with the first conductive vias; forming a plurality of through holes penetrating the wafer; filling a second insulating layer in the through holes; and forming a plurality of second conductive vias in the second insulating layer, wherein the second conductive vias are electrically connected with the first conductive vias.Type: ApplicationFiled: April 19, 2007Publication date: August 23, 2007Applicant: Industrial Technology Research InstituteInventors: Shou-Lung Chen, Ching-Wen Hsiao, Yu-Hua Chen, Jeng-Dar Ko, Chih-Ming Tzeng, Jyh-Rong Lin, Shan-Pu Yu
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Publication number: 20060157864Abstract: The present invention discloses an electronic device package and a method of the package. In particular, an electronic device package and a method of the package suitable for a bumpless electronic device package with enhanced electrical performance and heat-dissipation efficiency are disclosed. The method comprises: providing a substrate having a plurality of vias and a plurality of electronic devices; forming a gluing layer on a surface of the substrate and fixing the electronic devices on the gluing layer, wherein the electronic devices have I/O units aligned with the vias respectively; forming a plurality of fixing layers in the gaps between the electronic devices; trenching a plurality of openings aligned with the vias respectively in the fixing layer; forming a plurality of metallic conductive units in the vias, the openings and part of the surface of the substrate; and forming a passivation layer over the other surface of the substrate.Type: ApplicationFiled: November 9, 2005Publication date: July 20, 2006Applicant: Industrial Technology Research InstituteInventors: Shou-Lung Chen, Ching-Wen Hsiao, Yu-Hua Chen, Jeng-Dar Ko, Jyh-Rong Lin
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Publication number: 20060019484Abstract: This invention relates to a wafer-leveled chip packaging method, comprising the steps of: providing a wafer; attaching at least one first chip to the wafer; forming a first insulating layer on the wafer; forming a plurality of first conductive vias penetrating the first insulating layer, wherein parts of the first conductive vias are electrically connected with the first chip; forming a conductive pattern layer on the surface of the first insulating layer wherein the conductive pattern layer is electrically connected with the first conductive vias; forming a plurality of through holes penetrating the wafer; filling a second insulating layer in the through holes; and forming a plurality of second conductive vias in the second insulating layer, wherein the second conductive vias are electrically connected with the first conductive vias.Type: ApplicationFiled: July 22, 2005Publication date: January 26, 2006Applicant: Industrial Technology Research InstituteInventors: Shou-Lung Chen, Ching-Wen Hsiao, Yu-Hua Chen, Jeng-Dar Ko, Chih-Ming Tzeng, Jyh-Rong Lin, Shan-Pu Yu