Patents by Inventor Jeng-Hwa Liao
Jeng-Hwa Liao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230326969Abstract: A transistor structure including a substrate, a gate structure, first pocket doped regions, second pocket doped regions, and source/drain extension regions, and source/drain regions is provided. The gate structure is located on the substrate. The first pocket doped regions are located in the substrate aside the gate structure. A dopant of the first pocket doped region includes a group IVA element. The second pocket doped regions are located in the substrate aside the gate structure. A depth of the second pocket doped region is greater than a depth of the first pocket doped region. The source/drain extension regions are located in the first pocket doped regions. The source/drain regions are located in the substrate aside the gate structure. The source/drain extension region is located between the source/drain region and the gate structure.Type: ApplicationFiled: June 30, 2022Publication date: October 12, 2023Applicant: MACRONIX International Co., Ltd.Inventors: Jeng Hwa Liao, Zong-Jie Ko, Hsing-Ju Lin, Jung-Yu Shieh, Ling-Wuu Yang
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Patent number: 10354924Abstract: Provided is a semiconductor memory device including a substrate, a plurality of first isolation structures, and a plurality of second isolation structures. The substrate includes a periphery region and an array region. The first isolation structures are located in the substrate of the periphery region. The second isolation structures are located in the substrate of the array region. A material of the first isolation structures is different from a material of the second isolation structures. A width of each of the first isolation structures is greater than a width of each of the second isolation structures.Type: GrantFiled: August 30, 2017Date of Patent: July 16, 2019Assignee: MACRONIX International Co., Ltd.Inventors: Jeng-Hwa Liao, Zong-Jie Ko, Jung-Yu Shieh, Ling-Wuu Yang
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Publication number: 20190067119Abstract: Provided is a semiconductor memory device including a substrate, a plurality of first isolation structures, and a plurality of second isolation structures. The substrate includes a periphery region and an array region. The first isolation structures are located in the substrate of the periphery region. The second isolation structures are located in the substrate of the array region. A material of the first isolation structures is different from a material of the second isolation structures. A width of each of the first isolation structures is greater than a width of each of the second isolation structures.Type: ApplicationFiled: August 30, 2017Publication date: February 28, 2019Applicant: MACRONIX International Co., Ltd.Inventors: Jeng-Hwa Liao, Zong-Jie Ko, Jung-Yu Shieh, Ling-Wuu Yang
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Publication number: 20170069762Abstract: A memory device and a method for fabricating the same are provided. A memory device includes a tunneling dielectric layer located on a substrate. The floating gate includes a first doped portion on the tunneling dielectric layer and a second doped portion located on the first doped portion. The first doped portion includes a first dopant and a second dopant, and the second doped portion includes the first dopant. The grain size of the first doped portion is smaller than the grain size of the second doped portion, and the grain size of the first doped portion is between 150 ? to 200 ?. The memory device further includes an inter-gate dielectric layer on the floating gate and a control gate on the inter-gate dielectric layer. A source region and a drain region are located in the substrate besides sidewalls of the floating gate.Type: ApplicationFiled: September 4, 2015Publication date: March 9, 2017Inventors: Jeng-Hwa Liao, Jung-Yu Shieh, Ling-Wuu Yang
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Patent number: 9236497Abstract: The method for fabricating a semiconductor device is provided. A doped semiconductor layer is formed over the substrate. The doped semiconductor layer is patterned to form a plurality of doped semiconductor patterns. An implantation process is performed to implant a dopant into the doped semiconductor patterns. A process temperature of the implantation process is no more than about ?50° C. The dopants of the implantation process and the doped semiconductor patterns have the same conductivity type.Type: GrantFiled: December 16, 2013Date of Patent: January 12, 2016Assignee: MACRONIX International Co., Ltd.Inventors: Jeng-Hwa Liao, Jung-Yu Shieh, Ling-Wuu Yang
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Publication number: 20150340236Abstract: Present example embodiments relate generally to semiconductor devices and methods of fabricating a semiconductor device. The method comprises providing a substrate, forming an insulating layer over the substrate, and forming a conductive structure over the insulating layer. The conductive structure is formed by forming a first conductive layer, performing a degassing preparation process over a surface of the first conductive layer to substantially prevent a degassing of the first conductive layer from reaching a second conductive layer, and forming the second conductive layer over the first conductive layer.Type: ApplicationFiled: May 21, 2014Publication date: November 26, 2015Applicant: MACRONIX INTERNATIONAL CO., LTD.Inventors: Jeng Hwa Liao, Jung-Yu Shieh, Ling Wuu Yang
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Publication number: 20150171223Abstract: The method for fabricating a semiconductor device is provided. A doped semiconductor layer is formed over the substrate. The doped semiconductor layer is patterned to form a plurality of doped semiconductor patterns. An implantation process is performed to implant a dopant into the doped semiconductor patterns. A process temperature of the implantation process is no more than about ?50° C. The dopants of the implantation process and the doped semiconductor patterns have the same conductivity type.Type: ApplicationFiled: December 16, 2013Publication date: June 18, 2015Applicant: MACRONIX International Co., Ltd.Inventors: Jeng-Hwa Liao, Jung-Yu Shieh, Ling-Wuu Yang
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Patent number: 8969946Abstract: A semiconductor device includes polysilicon layer and a metal silicide layer. The polysilicon layer is doped with carbon or phosphorous. The silicide layer is formed over the polysilicon layer.Type: GrantFiled: May 8, 2013Date of Patent: March 3, 2015Assignee: Macronix International Co., Ltd.Inventors: Pei-Ci Jhang, Zong-Jie Ko, Yumin Lin, Jung-Yu Shieh, Jeng Hwa Liao
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Publication number: 20140264544Abstract: A semiconductor device includes polysilicon layer and a metal silicide layer. The polysilicon layer is doped with carbon or phosphorous. The silicide layer is formed over the polysilicon layer.Type: ApplicationFiled: May 8, 2013Publication date: September 18, 2014Applicant: MACRONIX INTERNATIONAL CO., LTD.Inventors: Pei-Ci Jhang, Zong-Jie Ko, Yumin Lin, Jung-Yu Shieh, Jeng Hwa Liao
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Patent number: 8791022Abstract: The method of forming a wordline is provided in the present invention. The proposed method includes steps of: (a) etching a metal-silicide layer and a POLY layer via a hard mask, wherein the metal-silicide layer is disposed on the POLY layer; (b) forming a POLY recess in the POLY layer; and (c) forming a liner film covering the metal-silicide layer.Type: GrantFiled: November 23, 2010Date of Patent: July 29, 2014Assignee: Macronix International Co. Ltd.Inventors: Jeng-Hwa Liao, Jung-Yu Shieh, Ling-Wu Yang
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Publication number: 20140117356Abstract: A semiconductor device includes a substrate, a semiconductor layer, and a material layer. The semiconductor layer is formed over the substrate. The material layer is formed over the semiconductor layer. The semiconductor layer and the material layer have a tapered profile in a vertical direction extending from the substrate.Type: ApplicationFiled: October 30, 2012Publication date: May 1, 2014Applicant: MACRONIX INTERNATIONAL CO., LTD.Inventors: Jeng Hwa Liao, Jung Yu Shieh, Ling Wuu Yang
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Publication number: 20140048866Abstract: An improved gate structure is provided whereby the gate structure is defined by a trench, the trench having a first oxide layer and a second oxide layer. The invention also provides methods for fabricating the gate structure of the invention defined by a trench having a first oxide layer and a second oxide layer.Type: ApplicationFiled: August 17, 2012Publication date: February 20, 2014Applicant: MACRONIX INTERNATIONAL CO., LTD.Inventors: Jeng Hwa Liao, Jung Yu Shieh, Ling Wuu Yang
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Publication number: 20130168754Abstract: A method of forming a semiconductor device is provided. The method includes providing a semiconductor substrate, and forming a first conductive layer over the substrate. In one example, an insulating layer may be formed over the semiconductor substrate, with the first conductive layer being formed over the insulating layer. The method also includes forming an interpoly dielectric layer over the first conductive layer. In this regard, forming the interpoly dielectric layer includes forming a silicon oxide layer, and subjecting the silicon oxide layer to oxide densification to form an oxide-densified silicon oxide layer. And the method includes forming a second conductive layer over the interpoly dielectric layer.Type: ApplicationFiled: December 28, 2011Publication date: July 4, 2013Applicant: MACRONIX INTERNATIONAL CO., LTD.Inventors: Jeng Hwa Liao, Jung Yu Shieh, Ling Wuu Yang
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Publication number: 20120129350Abstract: The method of forming a wordline is provided in the present invention. The proposed method includes steps of: (a) etching a metal-silicide layer and a POLY layer via a hard mask, wherein the metal-silicide layer is disposed on the POLY layer; (b) forming a POLY recess in the POLY layer; and (c) forming a liner film covering the metal-silicide layer.Type: ApplicationFiled: November 23, 2010Publication date: May 24, 2012Applicant: MACRONIX INTERNATIONAL CO., LTD.Inventors: Jeng-Hwa Liao, Jung-Yu Shieh, Ling-Wu Yang
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Patent number: 8169835Abstract: A band gap engineered, charge trapping memory cell includes a charge storage structure including a trapping layer. a blocking layer, and a dielectric tunneling structure including a thin tunneling layer, a thin bandgap offset layer and a thin isolation layer comprising silicon oxynitride. The memory cell is manufactured using low thermal budget processes.Type: GrantFiled: September 28, 2009Date of Patent: May 1, 2012Assignee: Macronix International Co., Ltd.Inventors: Jeng-Hwa Liao, Jung-Yu Shieh, Ling-Wuu Yang
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Publication number: 20110075486Abstract: A band gap engineered, charge trapping memory cell includes a charge storage structure including a trapping layer. a blocking layer, and a dielectric tunneling structure including a thin tunneling layer, a thin bandgap offset layer and a thin isolation layer comprising silicon oxynitride. The memory cell is manufactured using low thermal budget processes.Type: ApplicationFiled: September 28, 2009Publication date: March 31, 2011Applicant: Macronix International Co., Ltd.Inventors: Jeng-Hwa Liao, Jung-Yu Shieh, Ling-Wuu Yang
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Publication number: 20100210085Abstract: A method for fabricating a non-volatile memory of the invention includes providing a substrate, and a tunnel layer is formed on the substrate. A charge-trapping layer is formed on the tunnel layer using silane (SiH4), nitrous oxide (N2O), and ammonia (NH3) as a reactant gas. The charge-trapping layer has a refractive index greater than or equal to 1.49 but less than 1.96 at a wavelength of 633 nm. A top layer is formed on the charge-trapping layer. A gate is formed on the top layer.Type: ApplicationFiled: April 26, 2010Publication date: August 19, 2010Applicant: MACRONIX INTERNATIONAL CO., LTD.Inventors: Jeng-Hwa Liao, Jung-Yu Hsieh, Ling-Wu Yang
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Publication number: 20100178758Abstract: The method for fabricating the dielectric layer of the present invention is described as follows. A substrate is provided in a chamber, wherein the chamber is a single-wafer LPCVD chamber. A silicon source gas, an oxidation source gas and a nitridation source gas are then introduced into the chamber, wherein a volumetric flow rate ratio of the oxidation source gas to a total amount of the oxidation source gas and the nitridation source gas is varied within a range of 0.0245 to 0.375. Afterwards, the dielectric layer with a dielectric constant within a range of 4.8 to 7.6 is formed on the substrate.Type: ApplicationFiled: January 15, 2009Publication date: July 15, 2010Applicant: MACRONIX INTERNATIONAL CO., LTD.Inventors: Jeng-Hwa Liao, Jung-Yu Hsieh, Ling-Wu Yang