Abstract: In a described example, an apparatus includes: a semiconductor die having a device side surface and an opposing backside surface, the backside surface mounted to a die pad of a lead frame using a die attach film; bond pads overlying the device side surface of the semiconductor die; bond wires electrically coupling the bond pads to leads of the lead frame spaced from the die pad; and mold compound covering the semiconductor die, the bond wires, and portions of the lead frame, where portions of the leads are exposed from the mold compound to form terminals of the packaged semiconductor device. The die attach film has a partially cut die attach film layer with a cut side edge normal to the backside surface, and the die attach film has an uncut die attach film layer with a torn side edge normal to the backside surface.

Abstract: A method includes applying laser pulses along a direction to a side of a wafer to create first and second stealth damage regions at respective first and second depths in the wafer and to create cracks that extend in the wafer from the respective stealth damage regions and that are spaced apart from one another along the direction, applying a compressive and retractive cyclical force to the wafer along the third direction to propagate and join the cracks from the respective stealth damage regions together, and expanding the wafer to separate individual dies from the wafer.

Abstract: A method of dicing a wafer includes positioning the wafer with its top side on a tape material. The wafer includes a plurality of die separated by scribe streets. A first pass being a first infrared (IR) laser beam is directed at the bottom side with a point of entry within the scribe streets. The first IR laser beam is focused with a focus point embedded within a thickness of the wafer, and has parameters selected to form an embedded crack line within the wafer. The embedded crack line does not reach the top side surface. A second pass being a second IR laser beam is directed at the bottom side having parameters selected to form a second crack line that that has a spacing relative to the embedded crack line, and the second IR laser beam causes the embedded crack line to be extended to the top side surface.

Abstract: A method for dicing a wafer includes scribing perforations in a wafer. The wafer has a monocrystalline structure and the perforations have a polycrystalline structure. The method also includes adhering the wafer to a top surface of a dicing tape and applying a downward force on a periphery of the dicing tape. The downward force causes a bottom surface of the dicing tape to deform around a contour of a dome-shaped chuck, breaking the perforations in the wafer.

Abstract: A method for dicing a wafer includes scribing perforations in a wafer. The wafer has a monocrystalline structure and the perforations have a polycrystalline structure. The method also includes adhering the wafer to a top surface of a dicing tape and applying a downward force on a periphery of the dicing tape. The downward force causes a bottom surface of the dicing tape to deform around a contour of a dome-shaped chuck, breaking the perforations in the wafer.