Patents by Inventor Jenn-Ming Wu

Jenn-Ming Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Bismuth ferrite thin-film solar cell and method of manufacturing the same
    Patent number: 9525085
    Abstract: A bismuth ferrite thin-film solar cell and a method of manufacturing the same control the quantity of Fe2+ defected in the bismuth ferrite thin-film by doping with zinc. Reduction of the quantity of Fe2+ defects in the bismuth ferrite thin-film is conducive to the increase of closed-circuit current density and enhancement of photoelectric conversion efficiency.
    Type: Grant
    Filed: December 17, 2014
    Date of Patent: December 20, 2016
    Assignee: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Yueh-Hsuan Tsai, Chao-Nan Wei, Hui-Yun Bor, Chia-Shih Lin, Cuo-Yo Nieh, Jenn-Ming Wu
  • BISMUTH FERRITE THIN-FILM SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20160181451
    Abstract: A bismuth ferrite thin-film solar cell and a method of manufacturing the same control the quantity of Fe2+ defected in the bismuth ferrite thin-film by doping with zinc. Reduction of the quantity of Fe2+ defects in the bismuth ferrite thin-film is conducive to the increase of closed-circuit current density and enhancement of photoelectric conversion efficiency.
    Type: Application
    Filed: December 17, 2014
    Publication date: June 23, 2016
    Inventors: YUEH-HSUAN TSAI, CHAO-NAN WEI, HUI-YUN BOR, CHIA-SHIH LIN, CUO-YO NIEH, JENN-MING WU
  • Frequency tunable device
    Patent number: 7221237
    Abstract: A frequency tunable device includes a substrate, and a capacitor structure supported by the substrate and including a ferroelectric film and first and second electrodes. The ferroelectric film has two opposite sides, and is made from a ferroelectric material having a formula of Pb1?xBaxZrO3, where x is a positive number greater than 0.3 and less than 0.6. The first and second electrodes are respectively formed on the sides of the ferroelectric film. The dielectric constant of the ferroelectric film varies with a voltage applied to the first and second electrodes.
    Type: Grant
    Filed: November 5, 2004
    Date of Patent: May 22, 2007
    Assignee: National Tsing Hua University
    Inventors: Chun-Sheng Liang, Mei-Hui Wu, Jenn-Ming Wu
  • Frequency tunable device
    Publication number: 20050212615
    Abstract: A frequency tunable device includes a substrate, and a capacitor structure supported by the substrate and including a ferroelectric film and first and second electrodes. The ferroelectric film has two opposite sides, and is made from a ferroelectric material having a formula of Pb1-xBaxZrO3, where x is a positive number greater than 0.3 and less than 0.6. The first and second electrodes are respectively formed on the sides of the ferroelectric film. The dielectric constant of the ferroelectric film varies with a voltage applied to the first and second electrodes.
    Type: Application
    Filed: November 5, 2004
    Publication date: September 29, 2005
    Inventors: Chun-Sheng Liang, Mei-Hui Wu, Jenn-Ming Wu
  • Castable glass-ceramic composition useful as dental restorative
    Patent number: 4515634
    Abstract: A glass ceramic, useful in making dental crowns and bridges, consisting essentially of:______________________________________ Broad Range, Preferred Component Mole Percent Mole % ______________________________________ Li.sub.2 O 24-33 29.5 .+-. 1 SiO.sub.2 37-74.3 59.0 .+-. 3,-2 Al.sub.2 O.sub.3 0.5-4 1.5 .+-. 0.5 CaO 1-10 6.0 .+-. 1 P.sub.2 O.sub.5 0.2-4 2.0 + 0.5,-1 TiO 0-4 1.0 .+-. 0.5 ZrO.sub.2 0-4 1.0 .+-. 0.5 MgO 0-2 -- K.sub.
    Type: Grant
    Filed: October 17, 1983
    Date of Patent: May 7, 1985
    Assignee: Johnson & Johnson Dental Products Company
    Inventors: Jenn-Ming Wu, Warren R. Cannon, Carlino Panzera