Patents by Inventor Jenn-Wei Lee

Jenn-Wei Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8765612
    Abstract: A double patterning process is described. A substrate having a first area and a second area is provided. A target layer is formed over the substrate. A patterned first photoresist layer is formed over the target layer, wherein the patterned first photoresist layer has openings and has a first thickness in the first area, and at least a portion of the patterned first photoresist layer in the second area has a second thickness less than the first thickness. A second photoresist layer is then formed covering the patterned first photoresist layer and filling in the openings.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: July 1, 2014
    Assignee: Nanya Technology Corporation
    Inventors: Jenn-Wei Lee, Hung-Jen Liu
  • Publication number: 20140080305
    Abstract: A double patterning process is described. A substrate having a first area and a second area is provided. A target layer is formed over the substrate. A patterned first photoresist layer is formed over the target layer, wherein the patterned first photoresist layer has openings and has a first thickness in the first area, and at least a portion of the patterned first photoresist layer in the second area has a second thickness less than the first thickness. A second photoresist layer is then formed covering the patterned first photoresist layer and filling in the openings.
    Type: Application
    Filed: September 14, 2012
    Publication date: March 20, 2014
    Applicant: NANYA TECHNOLOGY CORPORATION
    Inventors: Jenn-Wei Lee, Hung-Jen Liu