Patents by Inventor Jennifer L. DeHaven

Jennifer L. DeHaven has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6963125
    Abstract: A hermetically coated device includes an integrated semiconductor circuit die, a first layer comprising an inorganic material, the first layer enveloping the integrated semiconductor circuit die, a second layer, the second layer enveloping the integrated semiconductor circuit die. Formation of such device includes steps of providing an integrated semiconductor circuit die, applying a first layer comprising an inorganic material, the first layer enveloping the integrated semiconductor circuit die, and applying a second layer, the second layer enveloping the integrated semiconductor circuit die.
    Type: Grant
    Filed: February 13, 2002
    Date of Patent: November 8, 2005
    Assignees: Sony Corporation, Sony Electronics, Inc.
    Inventors: Michael Featherby, Jennifer L. DeHaven
  • Publication number: 20030013235
    Abstract: A hermetically coated device includes an integrated semiconductor circuit die, a first layer comprising an inorganic material, the first layer enveloping the integrated semiconductor circuit die, a second layer, the second layer enveloping the integrated semiconductor circuit die. Formation of such device includes steps of providing an integrated semiconductor circuit die, applying a first layer comprising an inorganic material, the first layer enveloping the integrated semiconductor circuit die, and applying a second layer, the second layer enveloping the integrated semiconductor circuit die.
    Type: Application
    Filed: February 13, 2002
    Publication date: January 16, 2003
    Inventors: Michael Featherby, Jennifer L. DeHaven
  • Patent number: 6368899
    Abstract: A hermetically coated device includes an integrated semiconductor circuit die, a first layer comprising an inorganic material, the first layer enveloping the integrated semiconductor circuit die, a second layer, the second layer enveloping the integrated semiconductor circuit die. Formation of such device includes steps of providing an integrated semiconductor circuit die, applying a first layer comprising an inorganic material, the first layer enveloping the integrated semiconductor circuit die, and applying a second layer, the second layer enveloping the integrated semiconductor circuit die.
    Type: Grant
    Filed: March 8, 2000
    Date of Patent: April 9, 2002
    Assignee: Maxwell Electronic Components Group, Inc.
    Inventors: Michael Featherby, Jennifer L. DeHaven