Patents by Inventor Jennifer L.M. Rupp

Jennifer L.M. Rupp has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11101481
    Abstract: The present application provides a new type of glucose fuel cell in which a layer of proton-conducting metal oxide is interposed between the anode and cathode electrodes. Such metal oxides can serve in the form of thin-layer fuel cell membrane materials for novel, all-solid state fuel cell designs.
    Type: Grant
    Filed: February 21, 2018
    Date of Patent: August 24, 2021
    Assignee: Massachusetts Institute of Technology
    Inventors: Philipp Simons, Jennifer L.M. Rupp
  • Publication number: 20190260053
    Abstract: The present application provides a new type of glucose fuel cell in which a layer of proton-conducting metal oxide is interposed between the anode and cathode electrodes. Such metal oxides can serve in the form of thin-layer fuel cell membrane materials for novel, all-solid state fuel cell designs.
    Type: Application
    Filed: February 21, 2018
    Publication date: August 22, 2019
    Inventors: Philipp Simons, Jennifer L.M. Rupp
  • Patent number: 9735356
    Abstract: The resistive-switching memory element of the present invention comprises a first electrode, a resistive-switching element; and a second electrode wherein the resistive-switching element is arranged between the first electrode and the second electrode and the resistive-switching element comprises, or consists of, a plurality of metal oxide layers and wherein neighboring metal oxide layers of the resistive-switching element comprise, or consist of, different metal oxides.
    Type: Grant
    Filed: April 16, 2014
    Date of Patent: August 15, 2017
    Assignee: ETH Zurich
    Inventors: Jennifer L. M. Rupp, Sebastian Schweiger, Felix Messerschmitt
  • Publication number: 20160087196
    Abstract: The resistive-switching memory element of the present invention comprises a first electrode, a resistive-switching element; and a second electrode wherein the resistive-switching element is arranged between the first electrode and the second electrode and the resistive-switching element comprises, or consists of a plurality of metal oxide layers and wherein neighboring metal oxide layers of the resistive-switching element comprise, or consist of, different metal oxides.
    Type: Application
    Filed: April 16, 2014
    Publication date: March 24, 2016
    Applicant: ETH Zurich
    Inventors: Jennifer L.M. Rupp, Sebastian Schweiger, Felix Messerschmitt