Patents by Inventor Jennifer S. Dumin

Jennifer S. Dumin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing a dual metal Schottky diode
    Patent number: 7902055
    Abstract: An embodiment of the invention is a Schottky diode 22 having a semiconductor substrate 3, a first metal 24, a barrier layer 26, and second metal 28. Another embodiment of the invention is a method of manufacturing a Schottky diode 22 that includes providing a semiconductor substrate 3, forming a barrier layer 26 over the semiconductor substrate 3, forming a first metal layer 23 over the semiconductor substrate 3, annealing the semiconductor substrate 3 to form areas 24 of reacted first metal and areas 23 of un-reacted first metal, and removing selected areas 23 of the un-reacted first metal. The method further includes forming a second metal layer 30 over the semiconductor substrate 3 and annealing the semiconductor substrate 3 to form areas 28 of reacted second metal and areas 30 of un-reacted second metal.
    Type: Grant
    Filed: March 30, 2005
    Date of Patent: March 8, 2011
    Assignee: Texas Instruments Incoprorated
    Inventors: Richard B. Irwin, Tony T. Phan, Hong-Ryong Kim, Ming-Yeh Chuang, Jennifer S. Dumin, Patrick J. Jones, Fredric D. Bailey
  • Dual metal Schottky diode
    Patent number: 6972470
    Abstract: An embodiment of the invention is a Schottky diode 22 having a semiconductor substrate 3, a first metal 24, a barrier layer 26, and second metal 28. Another embodiment of the invention is a method of manufacturing a Schottky diode 22 that includes providing a semiconductor substrate 3, forming a barrier layer 26 over the semiconductor substrate 3, forming a first metal layer 23 over the semiconductor substrate 3, annealing the semiconductor substrate 3 to form areas 24 of reacted first metal and areas 23 of un-reacted first metal, and removing selected areas 23 of the un-reacted first metal. The method further includes forming a second metal layer 30 over the semiconductor substrate 3 and annealing the semiconductor substrate 3 to form areas 28 of reacted second metal and areas 30 of un-reacted second metal.
    Type: Grant
    Filed: March 30, 2004
    Date of Patent: December 6, 2005
    Assignee: Texas Instruments Incorporated
    Inventors: Richard B. Irwin, Tony T. Phan, Hong-Ryong Kim, Ming-Yeh Chuang, Jennifer S. Dumin, Patrick J. Jones, Fredric D. Bailey