Abstract: Examples disclosed herein relate to a method and apparatus for cleaning and repairing a substrate support having a heater disposed therein. A method includes (a) cleaning a surface of a substrate support having a bulk layer, the substrate support is disposed in a processing environment configured to process substrates. The cleaning process includes forming a plasma at a high temperature from a cleaning gas mixture having a fluorine containing gas and oxygen. The method includes (b) removing oxygen radicals from the processing environment with a treatment plasma formed from a treatment gas mixture. The treatment gas mixture includes the fluorine containing gas. The method further includes (c) repairing an interface of the substrate support and the bulk layer with a post-treatment plasma. The post-treatment plasma is formed from a post-treatment gas mixture including a nitrogen containing gas. The high temperature is greater than or equal to about 500 degrees Celsius.

Abstract: Disclosed herein is a plasma-resistant chamber component and a method for manufacturing the same. A plasma-resistant chamber component of a semiconductor processing chamber that generates a plasma environment includes a ceramic article having multiple polished apertures. A roughness of the multiple polished apertures is less than 32 µin.

Abstract: Disclosed are methods of forming a chamber component for a process chamber. The methods may include filling a mold with nanoparticles or plasma spraying nanoparticles, where at least a portion of the nanoparticles include a core particle and a thin film coating over the core particle. The core particle and thin film are formed of, independently, a rare earth metal-containing oxide, a rare earth metal-containing fluoride, a rare earth metal-containing oxyfluoride, or combinations thereof. The nanoparticles may have a donut-shape having a spherical form with indentations on opposite sides. The methods also may include sintering the nanoparticles to form the chamber component and materials. Further described are chamber components and coatings formed from the described nanoparticles.

Abstract: An article such as a susceptor includes a body of a thermally conductive material coated by a first protective layer and a second protective layer over a surface of the body. The first protective layer is a thermally conductive ceramic. The second protective layer covers the first protective layer and is a plasma resistant ceramic thin film that is resistant to cracking at temperatures of 650 degrees Celsius.

Abstract: Embodiments of the present disclosure relate to articles, coated articles and methods of coating such articles with a rare earth metal containing oxide coating. A method of co-depositing a rare earth metal containing oxide coating on a surface of an article is disclosed. The method includes contacting the article surface with a first or second metal containing precursor to form a partial metal adsorption layer of a first metal or a second metal. The method further includes contacting the partial metal adsorption layer with the first or second metal containing precursor to form a co-adsorption layer of the first metal and the second metal. The method further includes contacting the co-adsorption layer with a reactant to form the rare earth metal containing oxide coating.

Abstract: Described herein are articles, systems and methods where a halogen resistant coating is deposited onto a surface of a chamber component using an atomic layer deposition (ALD) process. The halogen resistant coating has an optional amorphous seed layer and a transition metal-containing layer. The halogen resistant coating uniformly covers features of the chamber component, such as those having an aspect ratio of about 3:1 to about 300:1.

Abstract: Certain embodiments of the present disclosure relate to ceramic materials with high thermal shock resistance and high erosion resistance. In one embodiment, a ceramic material is formed from a composition comprising Al2O3, MgO, SiO2.

Abstract: Disclosed herein is a plasma-resistant chamber component and a method for manufacturing the same. A plasma-resistant chamber component of a semiconductor processing chamber that generates a plasma environment includes a ceramic article having multiple polished apertures. A roughness of the multiple polished apertures is less than 32 ?in.

Abstract: Methods of forming a metal oxyfluoride films are provided. A substrate is placed in an atomic layer deposition (ALD) chamber having a processing region. Flows of zirconium-containing gas, a zirconium precursor gas, for example, Tris(dimethylamino)cyclopentadienyl zirconium, an oxygen-containing gas, a fluorine containing gas, and an yttrium precursor, for example, tris(butylcyclopentadienyl)yttrium gas are delivered to the processing region, where a metal oxyfluoride film such as an yttrium zirconium oxyfluoride film, is formed.

Abstract: A chamber component for a process chamber comprises a ceramic body and one or more protective layer on at least one surface of the ceramic body, wherein the one or more protective layer comprises Y3Al5O12 having a dielectric constant of 9.76+/?up to 30% and a hermiticity of 4.4E-10 cm3/s+/?up to 30%.

Abstract: A method of manufacturing a chamber component for a processing chamber comprises forming a green body using a Y2O3—ZrO2 powder consisting essentially of 55-65 mol % Y2O3 and 35-45 mol % ZrO2; and sintering the green body to produce a sintered ceramic body consisting essentially of one or more phase of Y2O3—ZrO2, the sintered ceramic body consisting essentially of 55-65 mol % Y2O3 and 35-45 mol % ZrO2.

Abstract: Embodiments of the present disclosure relate to articles, coated articles and methods of coating such articles with a rare earth metal containing oxide coating. The coating can contain at least a first metal (e.g., a rare earth metal, tantalum, zirconium, etc.) and a second metal that have been co-deposited onto a surface of the article. The coating can include a homogenous mixture of the first metal and the second metal and does not contain mechanical segregation between layers in the coating.

Abstract: Methods of forming nanoceramic materials and components. The methods may include performing atomic layer deposition to form a plurality of nanoparticles, including forming a thin film coating over core particles, or sintering the nanoparticles in a mold. The nanoparticles can include a first material selected from a rare earth metal-containing oxide, a rare earth metal-containing fluoride, a rare earth metal-containing oxyfluoride or combinations thereof.

Abstract: A method includes performing ion beam sputtering with ion assisted deposition to deposit a protective layer on a surface of a body. The protective layer is a plasma resistant rare earth-containing film of a thickness less than 1000 µm. The porosity of the protective layer is below 1%. The plasma resistant rare earth-containing film consists of 40 mol% to less than 100 mol% of Y2O3, over 0 mol% to 60 mol% of ZrO2, and 0 mol% to 9 mol% of Al2O3.

Abstract: Methods and apparatus for depositing a coating on a semiconductor manufacturing apparatus component are provided herein. In some embodiments, a method of depositing a coating on a semiconductor manufacturing apparatus component includes: sequentially exposing a semiconductor manufacturing apparatus component including nickel or nickel alloy to an aluminum precursor and a reactant to form an aluminum containing layer on a surface of the semiconductor manufacturing apparatus component by a deposition process.

Abstract: An article has a body having a protective coating. The protective coating is a thin film that includes a metal oxy-fluoride. The metal oxy-fluoride has an empirical formula of MxOyFz, where M is a metal, y has a value of 0.1 to 1.9 times a value of x and z has a value of 0.1 to 3.9 times the value of x. The protective coating has a thickness of 1 to 30 microns and a porosity of less than 0.1%.

Abstract: Described herein are articles, systems and methods where a halogen resistant coating is deposited onto a surface of a chamber component using an atomic layer deposition (ALD) process. The halogen resistant coating has an optional amorphous seed layer and a transition metal-containing layer. The halogen resistant coating uniformly covers features of the chamber component, such as those having an aspect ratio of about 3:1 to about 300:1.

Abstract: A ground shield of a processing chamber includes a ceramic body including a ground shield plate, a raised edge extending from an upper surface of the ground shield plate, and a hollow shaft that extends from a lower surface of the ground shield plate. An electrically conductive layer is formed on and conforms to at least the upper surface of the ground shield plate and an interior surface of the hollow shaft. A first protective layer is formed on at least the electrically conductive layer. A heater plate of a heater first within the raised edge and on the ground shield plate such that the heater plate is disposed on top of the first protective layer, the electrically conductive layer, and the upper surface of the ground shield plate.

Abstract: A chamber component comprises a body and a plasma sprayed ceramic coating on the body. The plasma sprayed ceramic coating is applied using a method that includes feeding powder comprising a yttrium oxide containing solid solution into a plasma spraying system, wherein the powder comprises a majority of donut-shaped particles, each of the donut-shaped particles having a spherical body with indentations on opposite sides of the spherical body. The method further includes plasma spray coating the body to apply a ceramic coating onto the body, wherein the ceramic coating comprises the yttrium oxide containing solid solution, wherein the donut-shaped particles cause the ceramic coating to have an improved morphology and a decreased porosity as compared to powder particles of other shapes, wherein the improved surface morphology comprises a reduced amount of surface nodules.

Abstract: An article includes a body having a plasma-sprayed ceramic coating on a surface thereof. The body can be formed of at one least one of the following materials: Al, Al2O3, AlN, Y2O3, YSZ, or SiC. The plasma-sprayed ceramic coating can include at least one of Y2O3, Y4Al2O9, Y3Al5O12 or a solid-solution of Y2O3 mixed with at least one of ZrO2, Al2O3, HfO2, Er2O3, Nd2O3, Nb2O5, CeO2, Sm2O3 or Yb2O3. The plasma-sprayed ceramic coating can further include splats.