Abstract: A method and a circuit are disclosed for determining the resistive state of a resistive memory cell being read. The method includes determining the resistive state of the memory cell being read by comparing a current dependent on the resistive state of the memory cell being read with a reference current that can be dependent on a resistive state of at least one reference resistive memory cell. A read circuit can be constructed to compare the two currents. The resistive state of the memory cell being read is indicative of the data bit stored by the memory cell.

Abstract: An integrated semiconductor memory that has at least one temperature measuring element and repeatedly carries out a temperature measurement during the operation of the semiconductor memory, wherein the semiconductor memory repeats the temperature measurement at instants corresponding to a measuring frequency of the temperature measuring element. According to an embodiment of the invention, the measuring frequency of the temperature measuring element is variable and the temperature measuring element is driven in such a way that the measuring frequency changes in a manner dependent on the temporal development of measured values of the repeated temperature measurements.

Abstract: Methods and apparatus for determining a temperature of a memory device. A memory device includes a memory array, a temperature configured to measure a temperature of the device and an evaluating circuit configured to receive a signal representative of the temperature measured by the temperature sensor and configured to generate a code word indicative of the measured temperature and a type of the temperature sensor, the temperature sensor being selected from one of at least two different temperature sensor types.