Abstract: A heating device is provided wherein coating material can be transferred into the gas phase, particularly for use in a coating installation. The heating device preferably includes at least one heating unit with hollow spaces and an inner surface, wherein the hollow spaces of the heating unit are loadable with a coating material, and with a plurality of heating elements located in a distributed arrangement in the volume of the heating unit. A coating installation and a method for the transfer of coating material into the gas phase are also described.

Abstract: The invention relates to a photoactive component, especially a solar cell, comprising organic layers and formed by at least one stacked pi, ni, and/or pin diode. The diodes are characterized in that they comprise at least one p-doped or n-doped transport layer having a larger optical band gap than that of the photoactive layer. The individual diodes are characterized by a high internal quantum yield, but can be optically thin (peak absorption <80%). A high external quantum yield is obtained by either enlarging the optical path of the incident light in the diodes using light traps, or by stacking a plurality of the diodes. The transition between two diodes being facilitated by transition layers for the purposes of improved recombination and generation. Both forms of embodiment have a number of specific advantages using the doped transport layers with a large band gap.

Abstract: A heating device (10) is described, with which coating material can be transferred into the gas phase, particularly for use in a coating installation (100), with at least one heating device (11) with hollow spaces and an inner surface, wherein the hollow spaces of the heating device (11) are loadable with the coating material, and with a plurality of heating elements (12) located in a distributed arrangement in the volume of the heating device (11). A coating installation and a method for the transfer of coating material into the gas phase are also described.

Abstract: The invention relates to a photoactive component, especially a solar cell, comprising organic layers and formed by at least one stacked pi, ni, and/or pin diode. The diodes are characterised in that they comprise at least one p-doped or n-doped transport layer having a larger optical band gap than that of the photoactive layer. The individual diodes are characterised by a high internal quantum yield, but can be optically thin (peak absorption <80%). A high external quantum yield is obtained by either enlarging the optical path of the incident light in the diodes using light traps, or by stacking a plurality of the diodes. The transition between two diodes being facilitated by transition layers for the purposes of improved recombination and generation. Both forms of embodiment have a number of specific advantages using the doped transport layers with a large band gap.