Abstract: A process for removing an impurity from a mixture containing at least one chlorosilane and/or organochlorosilane and at least one impurity from the group comprising a boron compound, a phosphorus compound, and an arsenic compound is provided. The process includes contacting the liquid mixture with an unfunctionalized organic polymer having pores with an average pore diameter of less than 50 ?, the average pore diameter being determined in accordance with DIN ISO 66134, and optionally removing the unfunctionalized organic polymer.

Abstract: Boron, phosphorus, arsenic, antimony and other impurities are at least partially removed from a mixture containing at least one chlorosilane and/or organochlorosilane by a) contacting the liquid mixture with a carrier material functionalized with an amidoxime of the general structural formula (I), where CAR=carrier material and R1, R2 are independently of one another H, alkyl, alkenyl, aryl, alkylaryl; and b) optionally removing the functionalized carrier material.

Abstract: A process for obtaining hexachlorodisilane and uses for the same. The process includes contacting at least one partially hydrogenated chlorodisilane of general formula HxSi2Cl(6-x) where x is from 1 to 5 in the liquid state with a solid non-functionalized adsorber material that is selected from the group comprising silicates, aluminosilicates, organic polymer and/or combinations thereof. The process also includes optionally separating the hexachlorodisilane and/or optionally separating the adsorber material.

Abstract: The invention relates to a process for converting silicon tetrachloride (STC) to trichlorosilane (TCS), by introducing reactant gas containing STC and hydrogen into a reaction zone of a reactor in which the temperature is 1000-1600° C., wherein the reaction zone is heated by a heater located outside the reaction zone and the product gas containing TCS which forms is then cooled, with the proviso that it is cooled to a temperature of 700-900° C. within 0.1-35 ms, wherein the reactant gas is heated by the product gas by means of a heat exchanger working in countercurrent, wherein reactor and heat exchanger form a single, gas-tight component, wherein the component includes one or more ceramic materials selected from the group consisting of silicon carbide, silicon nitride, graphite, SiC-coated graphite and quartz glass.

Abstract: The invention relates to a process for converting silicon tetrachloride (STC) to trichlorosilane (TCS), by introducing reactant gas containing STC and hydrogen into a reaction zone of a reactor in which the temperature is 1000-1600° C., wherein the reaction zone is heated by a heater located outside the reaction zone and the product gas containing TCS which forms is then cooled, with the proviso that it is cooled to a temperature of 700-900° C. within 0.1-35 ms, wherein the reactant gas is heated by the product gas by means of a heat exchanger working in countercurrent, wherein reactor and heat exchanger form a single, gas-tight component, wherein the component includes one or more ceramic materials selected from the group consisting of silicon carbide, silicon nitride, graphite, SiC-coated graphite and quartz glass.