Patents by Inventor Jens Konrath
Jens Konrath has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9704718Abstract: A method for manufacturing a silicon carbide device includes providing a silicon carbide wafer and manufacturing a mask layer on top of the silicon carbide wafer. Further, the method includes structuring the mask layer at an edge of a silicon carbide device to be manufactured, so that the mask layer includes a bevel at the edge of the silicon carbide device to be manufactured. Additionally, the method includes etching the mask layer and the silicon carbide wafer by a mutual etching process, so that the bevel of the mask layer is reproduced at the edge of the silicon carbide device.Type: GrantFiled: March 22, 2013Date of Patent: July 11, 2017Assignee: Infineon Technologies Austria AGInventors: Anton Mauder, Ralf Otremba, Jens Konrath
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Patent number: 9608092Abstract: A method for forming a field-effect semiconductor device includes: providing a wafer having a main surface and a first semiconductor layer of a first conductivity type; forming at least two trenches from the main surface partly into the first semiconductor layer so that each of the at least two trenches includes, in a vertical cross-section substantially orthogonal to the main surface, a side wall and a bottom wall, and that a semiconductor mesa is formed between the side walls of the at least two trenches; forming at least two second semiconductor regions of a second conductivity type in the first semiconductor layer so that the bottom wall of each of the at least two trenches adjoins one of the at least two second semiconductor regions; and forming a rectifying junction at the side wall of at least one of the at least two trenches.Type: GrantFiled: August 10, 2015Date of Patent: March 28, 2017Assignee: Infineon Technologies AGInventors: Jens Konrath, Hans-Joachim Schulze, Roland Rupp, Wolfgang Werner, Frank Pfirsch
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Patent number: 9496346Abstract: A silicon carbide device includes a silicon carbide substrate, an inorganic passivation layer structure and a molding material layer. The inorganic passivation layer structure laterally covers at least partly a main surface of the silicon carbide substrate and the molding material layer is arranged adjacent to the inorganic passivation layer structure.Type: GrantFiled: December 18, 2015Date of Patent: November 15, 2016Assignee: Infineon Technology AGInventors: Roland Rupp, Christian Hecht, Jens Konrath, Wolfgang Bergner, Hans-Joachim Schulze, Rudolf Elpelt
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Publication number: 20160118484Abstract: A bipolar transistor includes a semiconductor structure having an emitter area of a first conductivity type electrically connected to an emitter contact of the bipolar transistor, a base area of a second conductivity type electrically connected to a base contact of the bipolar transistor, and a collector area of the first conductivity type electrically connected to a collector contact of the bipolar transistor. The collector area encloses sub areas of the second conductivity type, or the base area encloses sub areas of the first conductivity type. A doping concentration of the enclosed sub area and a doping concentration of the collector area or base area is selected so that a lateral integral of the doping concentration of the p-doped regions and a lateral integral of the doping concentration of the n-doped regions are basically equal.Type: ApplicationFiled: December 30, 2015Publication date: April 28, 2016Inventors: Jens Konrath, Hans-Joachim Schulze
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Publication number: 20160104779Abstract: A silicon carbide device includes a silicon carbide substrate, an inorganic passivation layer structure and a molding material layer. The inorganic passivation layer structure laterally covers at least partly a main surface of the silicon carbide substrate and the molding material layer is arranged adjacent to the inorganic passivation layer structure.Type: ApplicationFiled: December 18, 2015Publication date: April 14, 2016Inventors: Roland Rupp, Christian Hecht, Jens Konrath, Wolfgang Bergner, Hans-Joachim Schulze, Rudolf Elpelt
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Patent number: 9257511Abstract: A silicon carbide device includes a silicon carbide substrate, an inorganic passivation layer structure and a molding material layer. The inorganic passivation layer structure laterally covers at least partly a main surface of the silicon carbide substrate and the molding material layer is arranged adjacent to the inorganic passivation layer structure.Type: GrantFiled: September 23, 2013Date of Patent: February 9, 2016Assignee: Infineon Technologies AGInventors: Roland Rupp, Christian Hecht, Jens Konrath, Wolfgang Bergner, Hans-Joachim Schulze, Rudolf Elpelt
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Patent number: 9236458Abstract: A bipolar transistor includes a semiconductor structure including an emitter area, a base area and a collector area. The emitter area is electrically connected to an emitter contact of the bipolar transistor. Further, the emitter area has a first conductivity type. The base area is electrically connected to a base contact of the bipolar transistor. Further, the base area has at least mainly a second conductivity type. The collector area is electrically connected to a collector contact of the bipolar transistor and has at least mainly the first conductivity type. Further, the collector area includes a plurality of enclosed sub areas having the second conductivity type or the base area includes a plurality of enclosed sub areas having the first conductivity type.Type: GrantFiled: July 11, 2013Date of Patent: January 12, 2016Assignee: Infineon Technologies AGInventors: Jens Konrath, Hans-Joachim Schulze
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Publication number: 20150349097Abstract: A method for forming a field-effect semiconductor device includes: providing a wafer having a main surface and a first semiconductor layer of a first conductivity type; forming at least two trenches from the main surface partly into the first semiconductor layer so that each of the at least two trenches includes, in a vertical cross-section substantially orthogonal to the main surface, a side wall and a bottom wall, and that a semiconductor mesa is formed between the side walls of the at least two trenches; forming at least two second semiconductor regions of a second conductivity type in the first semiconductor layer so that the bottom wall of each of the at least two trenches adjoins one of the at least two second semiconductor regions; and forming a rectifying junction at the side wall of at least one of the at least two trenches.Type: ApplicationFiled: August 10, 2015Publication date: December 3, 2015Inventors: Jens Konrath, Hans-Joachim Schulze, Roland Rupp, Wolfgang Werner, Frank Pfirsch
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Patent number: 9136397Abstract: A field-effect semiconductor device having a semiconductor body with a main surface is provided. The semiconductor body includes, in a vertical cross-section substantially orthogonal to the main surface, a drift layer of a first conductivity type, a semiconductor mesa of the first conductivity type adjoining the drift layer, substantially extending to the main surface and having two side walls, and two second semiconductor regions of a second conductivity type arranged next to the semiconductor mesa. Each of the two second semiconductor regions forms a pn-junction at least with the drift layer. A rectifying junction is formed at least at one of the two side walls of the mesa. Further, a method for producing a heterojunction semiconductor device is provided.Type: GrantFiled: May 31, 2013Date of Patent: September 15, 2015Assignee: Infineon Technologies AGInventors: Jens Konrath, Hans-Joachim Schulze, Roland Rupp, Wolfgang Werner, Frank Pfirsch
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Patent number: 9029974Abstract: A semiconductor device according to an embodiment is at least partially arranged in or on a substrate and includes a recess forming a mesa, wherein the mesa extends along a direction into the substrate to a bottom plane of the recess and includes a semiconducting material of a first conductivity type, the semiconducting material of the mesa including at least locally a first doping concentration not extending further into the substrate than the bottom plane. The semiconductor device further includes an electrically conductive structure arranged at least partially along a sidewall of the mesa, the electrically conductive structure forming a Schottky or Schottky-like electrical contact with the semiconducting material of the mesa, wherein the substrate comprises the semiconducting material of the first conductivity type comprising at least locally a second doping concentration different from the first doping concentration along a projection of the mesa into the substrate.Type: GrantFiled: September 11, 2013Date of Patent: May 12, 2015Assignee: Infineon Technologies AGInventors: Romain Esteve, Jens Konrath, Daniel Kueck, David Laforet, Cedric Ouvrard, Roland Rupp, Andreas Voerckel, Wolfgang Werner
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Publication number: 20150069411Abstract: A semiconductor device according to an embodiment is at least partially arranged in or on a substrate and includes a recess forming a mesa, wherein the mesa extends along a direction into the substrate to a bottom plane of the recess and includes a semiconducting material of a first conductivity type, the semiconducting material of the mesa including at least locally a first doping concentration not extending further into the substrate than the bottom plane. The semiconductor device further includes an electrically conductive structure arranged at least partially along a sidewall of the mesa, the electrically conductive structure forming a Schottky or Schottky-like electrical contact with the semiconducting material of the mesa, wherein the substrate comprises the semiconducting material of the first conductivity type comprising at least locally a second doping concentration different from the first doping concentration along a projection of the mesa into the substrate.Type: ApplicationFiled: September 11, 2013Publication date: March 12, 2015Inventors: Romain Esteve, Jens Konrath, Daniel Kueck, David Laforet, Cedric Ouvrard, Roland Rupp, Andreas Voerckel, Wolfgang Werner
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Publication number: 20150014704Abstract: A bipolar transistor includes a semiconductor structure including an emitter area, a base area and a collector area. The emitter area is electrically connected to an emitter contact of the bipolar transistor. Further, the emitter area has a first conductivity type. The base area is electrically connected to a base contact of the bipolar transistor. Further, the base area has at least mainly a second conductivity type. The collector area is electrically connected to a collector contact of the bipolar transistor and has at least mainly the first conductivity type. Further, the collector area includes a plurality of enclosed sub areas having the second conductivity type or the base area includes a plurality of enclosed sub areas having the first conductivity type.Type: ApplicationFiled: July 11, 2013Publication date: January 15, 2015Inventors: Jens Konrath, Hans-Joachim Schulze
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Publication number: 20140353667Abstract: A field-effect semiconductor device having a semiconductor body with a main surface is provided. The semiconductor body includes, in a vertical cross-section substantially orthogonal to the main surface, a drift layer of a first conductivity type, a semiconductor mesa of the first conductivity type adjoining the drift layer, substantially extending to the main surface and having two side walls, and two second semiconductor regions of a second conductivity type arranged next to the semiconductor mesa. Each of the two second semiconductor regions forms a pn-junction at least with the drift layer. A rectifying junction is formed at least at one of the two side walls of the mesa. Further, a method for producing a heterojunction semiconductor device is provided.Type: ApplicationFiled: May 31, 2013Publication date: December 4, 2014Inventors: Jens Konrath, Hans-Joachim Schulze, Roland Rupp, Wolfgang Werner, Frank Pfirsch
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Publication number: 20140291697Abstract: A silicon carbide device includes a silicon carbide substrate, an inorganic passivation layer structure and a molding material layer. The inorganic passivation layer structure laterally covers at least partly a main surface of the silicon carbide substrate and the molding material layer is arranged adjacent to the inorganic passivation layer structure.Type: ApplicationFiled: September 23, 2013Publication date: October 2, 2014Applicant: Infineon Technologies AGInventors: Roland Rupp, Christian Hecht, Jens Konrath, Wolfgang Bergner, Hans-Joachim Schulze, Rudolf Elpelt
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Publication number: 20140284615Abstract: A method for manufacturing a silicon carbide device includes providing a silicon carbide wafer and manufacturing a mask layer on top of the silicon carbide wafer. Further, the method includes structuring the mask layer at an edge of a silicon carbide device to be manufactured, so that the mask layer includes a bevel at the edge of the silicon carbide device to be manufactured. Additionally, the method includes etching the mask layer and the silicon carbide wafer by a mutual etching process, so that the bevel of the mask layer is reproduced at the edge of the silicon carbide device.Type: ApplicationFiled: March 22, 2013Publication date: September 25, 2014Applicant: Infineon Technologies Austria AGInventors: Anton Mauder, Ralf Otremba, Jens Konrath