Patents by Inventor Jenspeter Rau
Jenspeter Rau has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230149609Abstract: The present disclosure relates to a holder for holding a connector of a dialysis liquid inlet line and a connector of a dialysate outlet line, wherein the holder comprises an arm. The arm comprises a first retainer for receiving or holding the connector of the dialysis liquid inlet line and a second retainer for receiving or holding the connector of the dialysate outlet line. The present disclosure further relates to a blood treatment apparatus and to a method for setting up a blood treatment apparatus for a blood treatment session.Type: ApplicationFiled: April 21, 2021Publication date: May 18, 2023Inventor: Jenspeter Rau
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Publication number: 20210322657Abstract: The present invention relates to a container for receiving a dry concentrate for producing a dialysis solution, comprising a container opening and a connector arranged on the container opening, the container comprising a side wall and the container opening being arranged in this side wall, and the connector comprising fixing means for fixing the container to a dialysis machine, which comprises a first retaining element having a container inlet and a second retaining element having a container outlet, a connection element being provided on which the first and the second retaining element are arranged and which is provided with lines that are fluidically connected to the container inlet and outlet, and a housing element of the connector being provided which is fluidically connected both to said lines and to the container opening and extends from the connection element to the container opening, the housing element comprising a curved or angled portion, wherein the connection element does not comprise a widened cType: ApplicationFiled: April 15, 2021Publication date: October 21, 2021Inventor: Jenspeter RAU
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Publication number: 20160243298Abstract: A blood treatment apparatus with a dialysis filter or with an intake for a dialysis filter, a dialysis liquid inlet line with a first connector to feed dialysis liquid into the dialysis filter, a dialysate outlet line with a second connector to discharge dialysate from the dialysis filter, a blood leak sensor which is configured and arranged to detect blood in or at the dialysis filter, in the dialysis liquid inlet line and/or in the dialysate outlet line, and configured to emit a blood leak signal (BLS) if blood is detected, a short-circuit line to connect the dialysis liquid inlet line and/or with the dialysate outlet line in fluid communication, wherein the short-circuit line comprises for this purpose a third connector and a fourth connector to connect with one of the first and second connector, and a control circuit, respectively.Type: ApplicationFiled: October 31, 2014Publication date: August 25, 2016Inventors: Gerhard Weisen, Thomas Pohl, Jenspeter Rau
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Patent number: 7408646Abstract: A focused light beam is directed onto a surface patch of a mask and decomposed into partial beams by diffraction at a structure formed on the surface of the mask. Detectors are set such that the intensity of at least two orders of diffraction can be measured. The measured intensities are compared with one another. By way of example, a quotient can be ascertained. The operations are repeated for adjacent surface patches. If the absolute values of the measured intensities fluctuate with a constant quotient, then a variation of the reflection or transmission over the surface of the mask is inferred. If the quotient varies as well, then line width fluctuations within the structure on the mask are inferred.Type: GrantFiled: March 3, 2005Date of Patent: August 5, 2008Assignee: Infineon Technologies AGInventors: Jenspeter Rau, Frank-Michael Kamm
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Patent number: 7400379Abstract: An apparatus for measuring an exposure intensity on a wafer is disclosed. According to one aspect, an apparatus for measuring an exposure intensity on a wafer includes an exposure device for generating a radiation having a predetermined wavelength. Further, the apparatus includes a mask at a first predetermined distance from the exposure device for patterned exposure of a wafer A detection device detects the exposure intensity at a second predetermined distance from the exposure device. A compensation device can be moved into the beam path between the exposure device and the detection device for the purpose of influencing the beam path.Type: GrantFiled: July 26, 2004Date of Patent: July 15, 2008Assignee: Infineon Technologies AGInventors: Jenspeter Rau, Silvio Teuber
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Patent number: 7229723Abstract: An opening is formed in a light-absorbing layer on a mask by applying a second resist above a first resist on the layer. A first exposure step with subsequent development of the second resist leads to the formation of a first opening in the developed second resist. The first resist is uncovered on an area within the opening. A second exposure step is performed by irradiation of the mask in a second segment, which is laterally offset with respect to the first opening, so that an incomplete portion of the area of the uncovered first resist is exposed within the opening. After a further development step and an etching step with formation of a second opening in the developed first resist with a transfer of the portion into the light-absorbing layer, this opening has a diameter smaller than both the first and the second segment.Type: GrantFiled: March 2, 2004Date of Patent: June 12, 2007Assignee: Infineon Technologies AGInventor: Jenspeter Rau
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Patent number: 7090948Abstract: A reflection mask, preferably, an EUV reflection mask, for imaging a pattern that has or is formed on the mask onto a semiconductor wafer with extreme ultraviolet radiation or soft X-radiation includes a substrate, a reflection layer thereon reflecting incident radiation, an absorption layer thereon absorbing incident radiation, and a hard mask thereon of a material having an etching selectivity with respect to absorbent material of the absorption layer. After exposure and development of the resist, the pattern is transferred into the hard mask in a first etching step and the resist is removed, and inspection of the pattern in the hard mask detects defects in the hard mask. Defects can be repaired by FIB. Gallium ions are implanted in the absorption layer instead of in the reflection layer, rendering a buffer layer obsolete and allowing lower aspect ratios of trenches on the finished reflection mask.Type: GrantFiled: November 18, 2002Date of Patent: August 15, 2006Assignee: Infineon Technologies AGInventor: Jenspeter Rau
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Publication number: 20060147839Abstract: A radiation-sensitive coating material, in addition to a base polymer, has a solvent and a radiation-active substance which forms an acid on irradiation by light (including energetic electrons or ions), a fluorescent substance which alters its fluorescence property subject to a change in the acid content of its surroundings. In a process for exposing a substrate coated with the coating material at least one sensor in the exposure chamber of the exposure apparatus measures the intensity of the change in fluorescence spectrum as a function of time during the exposure operation. From the course of intensity at the time of an individual line of the fluorescence spectrum or the intensity integrated over a wavelength interval it is possible to determine the endpoint of the exposure operation by way of electronic algorithms. Deviations from experimentally determined ideal curves of the intensity course provide information on erroneous functions in the course of coating material application and exposure.Type: ApplicationFiled: March 6, 2006Publication date: July 6, 2006Inventors: Jenspeter Rau, Siegfried Schwarzl, Stefan Wurm
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Patent number: 7060399Abstract: A reflective optical mirror for semiconductor fabrication includes a capping layer above a reflective multilayer sequence. A doping is provided for the capping layer and an artificial oxide layer is grown on the capping layer with the aid of hydrogen peroxide, in particular in the presence of a catalyst. The artificially grown oxide layer is more homogeneous than a naturally grown oxide and thereby improves optical properties of the mirror during a lithographic exposure of semiconductor products.Type: GrantFiled: August 1, 2003Date of Patent: June 13, 2006Assignee: Infineon Technologies AGInventors: Frank-Michael Kamm, Jenspeter Rau
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Patent number: 7029808Abstract: A radiation-sensitive coating material, in addition to a base polymer, has a solvent and a radiation-active substance which forms an acid on irradiation by light (including energetic electrons or ions), a fluorescent substance which alters its fluorescence property subject to a change in the acid content of its surroundings. In a process for exposing a substrate coated with the coating material at least one sensor in the exposure chamber of the exposure apparatus measures the intensity of the change in fluorescence spectrum as a function of time during the exposure operation. From the course of intensity at the time of an individual line of the fluorescence spectrum or the intensity integrated over a wavelength interval it is possible to determine the endpoint of the exposure operation by way of electronic algorithms. Deviations from experimentally determined ideal curves of the intensity course provide information on erroneous functions in the course of coating material application and exposure.Type: GrantFiled: September 29, 2003Date of Patent: April 18, 2006Assignee: Infineon Technologies AGInventors: Jenspeter Rau, Siegfried Schwarzl, Stefan Wurm
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Publication number: 20050244723Abstract: The invention relates to a lithography mask for fabricating semiconductor components with at least one reflective multilayer structure on a mask substrate, a first structure being arranged in and/or on the multilayer structure, and with at least one absorber layer, characterized in that a second structure (2) is arranged in and/or on the absorber layer (20), the characteristic length of the first structure (1) is 1.5 to 10 times greater than the characteristic length of the second structure (2). This creates a lithography mask, which can be used to fabricate structures having a very different size and/or form on a substrate.Type: ApplicationFiled: March 31, 2005Publication date: November 3, 2005Inventors: Christian Holfeld, Jenspeter Rau
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Publication number: 20050195414Abstract: A focused light beam is directed onto a surface patch of a mask and decomposed into partial beams by diffraction at a structure formed on the surface of the mask. Detectors are set such that the intensity of at least two orders of diffraction can be measured. The measured intensities are compared with one another. By way of example, a quotient can be ascertained. The operations are repeated for adjacent surface patches. If the absolute values of the measured intensities fluctuate with a constant quotient, then a variation of the reflection or transmission over the surface of the mask is inferred. If the quotient varies as well, then line width fluctuations within the structure on the mask are inferred.Type: ApplicationFiled: March 3, 2005Publication date: September 8, 2005Inventors: Jenspeter Rau, Frank-Michael Kamm
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Publication number: 20050037268Abstract: The present invention provides an apparatus for measuring an exposure intensity on a wafer having: an exposure device (10) for generating a radiation (11) having a predetermined wavelength; a mask (12) at a first predetermined distance from the exposure device (10) for patterned exposure of a wafer; a detection device (16) for detecting the exposure intensity at a second predetermined distance from the exposure device (11); and a compensation device (14) which can be moved into the beam path (13) between the exposure device (10) and the detection device (16) for the purpose of influencing the beam path (13).Type: ApplicationFiled: July 26, 2004Publication date: February 17, 2005Inventors: Jenspeter Rau, Silvio Teuber
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Publication number: 20050027905Abstract: A reflective optical mirror for semiconductor fabrication includes a capping layer above a reflective multilayer sequence. A doping is provided for the capping layer and an artificial oxide layer is grown on the capping layer with the aid of hydrogen peroxide, in particular in the presence of a catalyst. The artificially grown oxide layer is more homogeneous than a naturally grown oxide and thereby improves optical properties of the mirror during a lithographic exposure of semiconductor products.Type: ApplicationFiled: August 1, 2003Publication date: February 3, 2005Inventors: Frank-Michael Kamm, Jenspeter Rau
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Publication number: 20040197676Abstract: An opening is formed in a light-absorbing layer on a mask by applying a second resist above a first resist on the layer. A first exposure step with subsequent development of the second resist leads to the formation of a first opening in the developed second resist. The first resist is uncovered on an area within the opening. A second exposure step is performed by irradiation of the mask in a second segment, which is laterally offset with respect to the first opening, so that an incomplete portion of the area of the uncovered first resist is exposed within the opening. After a further development step and an etching step with formation of a second opening in the developed first resist with a transfer of the portion into the light-absorbing layer, this opening has a diameter smaller than both the first and the second segment.Type: ApplicationFiled: March 2, 2004Publication date: October 7, 2004Inventor: Jenspeter Rau
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Publication number: 20040115563Abstract: A radiation-sensitive coating material, in addition to a base polymer, has a solvent and a radiation-active substance which forms an acid on irradiation by light (including energetic electrons or ions), a fluorescent substance which alters its fluorescence property subject to a change in the acid content of its surroundings. In a process for exposing a substrate coated with the coating material at least one sensor in the exposure chamber of the exposure apparatus measures the intensity of the change in fluorescence spectrum as a function of time during the exposure operation. From the course of intensity at the time of an individual line of the fluorescence spectrum or the intensity integrated over a wavelength interval it is possible to determine the endpoint of the exposure operation by way of electronic algorithms. Deviations from experimentally determined ideal curves of the intensity course provide information on erroneous functions in the course of coating material application and exposure.Type: ApplicationFiled: September 29, 2003Publication date: June 17, 2004Inventors: Jenspeter Rau, Siegfried Schwarzl, Stefan Wurm
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Patent number: 6707123Abstract: In an EUV reflection mask which is set up for region-by-region exposure of a radiation-sensitive layer lying on a semiconductor wafer by means of radiation in the spectral region of extreme ultraviolet radiation, which radiation is reflected at the mask, patterns are written directly into a multilayer layer, lying on a substrate, by means of a focused laser beam or by ion implantation, the reflectivity of which patterns is reduced by more than 90% compared with the reflectivity of the regions that are not written to, and which patterns form the radiation-absorbing regions of the mask. This avoids the shadowing of the exposure radiation that is incident at a small angle, said shadowing occurring with the use of the EUV reflection masks that have been customary heretofore.Type: GrantFiled: July 15, 2002Date of Patent: March 16, 2004Assignee: Infineon Technologies AGInventor: Jenspeter Rau
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Publication number: 20040030814Abstract: The present invention, generally speaking, provides an efficient method of sending a long message from a first compute node to a second compute node across an interconnection network. In the first compute node, a message header field is set to a predetermined value and the message is sent. In the second compute node, the message header is received and processed, and a memory location is read in accordance with the contents of a base address register and an index register. Using Direct Memory Access, the message is then stored in memory at a storage address determined in accordance with the contents of the memory location. Preferably, the storage address is aligned on a memory page boundary.Type: ApplicationFiled: August 1, 2003Publication date: February 12, 2004Inventors: Frank-Michael Kamm, Jenspeter Rau
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Publication number: 20030123605Abstract: A reflection mask, preferably, an EUV reflection mask, for imaging a pattern that has or is formed on the mask onto a semiconductor wafer with extreme ultraviolet radiation or soft X-radiation includes a substrate, a reflection layer thereon reflecting incident radiation, an absorption layer thereon absorbing incident radiation, and a hard mask thereon of a material having an etching selectivity with respect to absorbent material of the absorption layer. After exposure and development of the resist, the pattern is transferred into the hard mask in a first etching step and the resist is removed, and inspection of the pattern in the hard mask detects defects in the hard mask. Defects can be repaired by FIB. Gallium ions are implanted in the absorption layer instead of in the reflection layer, rendering a buffer layer obsolete and allowing lower aspect ratios of trenches on the finished reflection mask.Type: ApplicationFiled: November 18, 2002Publication date: July 3, 2003Inventor: Jenspeter Rau
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Publication number: 20030013216Abstract: In an EUV reflection mask which is set up for region-by-region exposure of a radiation-sensitive layer lying on a semiconductor wafer by means of radiation in the spectral region of extreme ultraviolet radiation, which radiation is reflected at the mask, patterns are written directly into a multilayer layer, lying on a substrate, by means of a focused laser beam or by ion implantation, the reflectivity of which patterns is reduced by more than 90% compared with the reflectivity of the regions that are not written to, and which patterns form the radiation-absorbing regions of the mask. This avoids the shadowing of the exposure radiation that is incident at a small angle, said shadowing occurring with the use of the EUV reflection masks that have been customary heretofore.Type: ApplicationFiled: July 15, 2002Publication date: January 16, 2003Inventor: Jenspeter Rau