Patents by Inventor Jeong Gun Park

Jeong Gun Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8401374
    Abstract: An apparatus and method of managing data stored in a data storage unit is provided. Data stored in the storage unit is classified into data to be preserved and deletable data. The data is preserved or deleted on the basis of preservation setting and a preservation period of the data in the storage unit. The preserving and deleting of the data may be automatically or manually performed based on the remaining storage capacity of the storage unit.
    Type: Grant
    Filed: August 24, 2006
    Date of Patent: March 19, 2013
    Assignee: LG Electronics Inc.
    Inventor: Jeong Gun Park
  • Patent number: 6491867
    Abstract: A hydrogen storage alloy, represented by the following formula I which is suitable for use as an active anode material for ni-metal hydride secondary cells by virtue of its high discharge characteristics including, for example, a discharge capacity ranging from approximately 300 to 400 mAh/g and a rate capability of at least 80%; Zr1−xtix(MnuVvNiy)z  I wherein, x, u, v, and z each represent an atom fraction under the condition of: 0<x≦0.2, 1.5≦u≦0.7, 0.5≦v≦0.7, 1.0≦y≦1.4, and 0.84≦z≦1.0.1.
    Type: Grant
    Filed: June 26, 1998
    Date of Patent: December 10, 2002
    Assignee: Korea Advanced Institute of Science and Technology
    Inventors: Jai Young Lee, Dong Myung Kim, Jae Han Jung, Ji Sang Yu, Sang Min Lee, Jeong Gun Park, Ho Lee
  • Patent number: 6332908
    Abstract: Disclosed is a method for modifying a surface of a hydrogen storage alloy for an Ni/MH secondary battery using flake type metal comprising the steps of ball-milling metal powder to produce flake type metal powder; and ball-milling the flake metal powder together with hydrogen storage alloy powder to obtain mixture powder. The method according to the present invention provides the hydrogen storage alloy capable of increasing discharge capacity of an electrode and lengthening electrode life duration for the Ni/MH secondary battery.
    Type: Grant
    Filed: October 20, 2000
    Date of Patent: December 25, 2001
    Assignee: Korea Advanced Institute of Science and Technology
    Inventors: Jai Young Lee, Ji Sang Yu, Seoung Hoe Kim, Sang Min Lee, Ho Lee, Jeong Gun Park
  • Patent number: 6106768
    Abstract: There are disclosed Mm/Ni type hydrogen storage alloys for Ni/MH secondary cells. The alloys which allow the cells to be of high performance and high capacity can be prepared at lower costs than the production costs of conventional Co-rich hydrogen storage alloys, by reducing the amount of the Co element. The Co element is partially or wholly replaced by by Cr, Cu, Fe, Zn and/or Zi, which are each known to be of stronger affinity for hydrogen than is Co and to have such a strong oxidation tendency in electrolytes as to form a highly dense oxide. The novel alloys have discharge capacities and electrode life span as good as those of the conventional Co-rich hydrogen storage alloys but have advantages over the Co-rich alloys, including performance-to-cost.
    Type: Grant
    Filed: May 15, 1998
    Date of Patent: August 22, 2000
    Assignee: Korea Advanced Institute of Science and Technology
    Inventors: Jai Young Lee, Kuk Jin Jang, Jae Han Jung, Dong Myung Kim, Ji Sang Yu, Sang Min Lee, Jeong Gun Park, Ho Lee
  • Patent number: 6086820
    Abstract: A method for producing an electrode of Ni/metal hydride alloy secondary cells. The electrode may be produced by mixing an active material with approximately 10-50 wt % of Cu powders, which can serve as a binder as well as a current collector, and cold-pressing the mixture at a pressure of 10 ton/cm. As the Cu-compacted electrode continues to experience the cycle of charge and discharge, the desolution-deposition of Cu is gradually produced. This desolution-deposition of Cu allows Cu to be deposited on the surface of the electrode comprising the hydrogen storage alloy, so that the electrode can be similar to a conventional Cu-electroless plated electrode in surface morphology. Consequently, the method of the invention can be an alternative for conventional electroless plating, which significantly improves the general functions of hydrogen storage alloy electrode, including low temperature dischargeability and high rate capability, without producing pollution of the environment.
    Type: Grant
    Filed: April 14, 1998
    Date of Patent: July 11, 2000
    Assignee: Korea Advanced Institute of Science & Technology
    Inventors: Jai Young Lee, Kuk Jin Jang, Jae Han Jung, Dong Myung Kim, Ji Sang Yu, Sang Min Lee, Jeong Gun Park, Ho Lee