Patents by Inventor Jeong Hoon Kim

Jeong Hoon Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11177776
    Abstract: A bias timing control circuit includes a current source, a bias switch circuit, a duty cycle sensing circuit, and a switching control circuit. The bias switch circuit includes a first path switch, connected between an output node of the current source and a bias amplifying circuit, and a second path switch, connected between the output node of the current source and a temperature compensation circuit. The duty cycle sensing circuit is configured to generate a timing control signal based on a duty cycle of a transmission enable signal. The switching control circuit is configured to control a first turn-on time of the first path switch during an initial startup period, and a second turn-on time of the second path switch during a normal driving period subsequent to the initial startup period to adjust a warm-up time of a power amplifying circuit based on the timing control signal.
    Type: Grant
    Filed: October 16, 2019
    Date of Patent: November 16, 2021
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Jong Ok Ha, Byeong Hak Jo, Jeong Hoon Kim, Young Wong Jang, Shinichi Iizuka
  • Patent number: 11177801
    Abstract: A radio frequency switching device includes: a first series switching circuit connected between a first terminal and a second terminal; a first shunt switching circuit connected between one end of the first series switching circuit and a ground; a voltage generation circuit configured to generate a first gate voltage to be output to the first series switching circuit, to generate a second gate voltage to be output to the first shunt switching circuit, and to generate a bias voltage higher than the second gate voltage to control the first shunt switching circuit to enter an off state; a first resistance circuit connected between a signal line between the first terminal and the second terminal, and a bias voltage terminal of the voltage generation circuit; and a second resistance circuit connected between the bias voltage terminal of the voltage generation circuit and a ground terminal of the first shunt switching circuit.
    Type: Grant
    Filed: February 20, 2019
    Date of Patent: November 16, 2021
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Byeong Hak Jo, Hyun Paek, Jeong Hoon Kim
  • Patent number: 11121679
    Abstract: An amplifying apparatus is provided. The amplifying apparatus comprises an amplifying circuit comprising a power amplifier and a bias circuit, the bias circuit is configured to detect an ambient temperature of the power amplifier to output a temperature voltage and regulate an internal current based on an input control signal to supply a bias current obtained by the regulation to the power amplifier; and a temperature control circuit that generates the control signal based on the temperature voltage during initial driving from a transmission mode starting point in time to an input point in time at which an input signal is input and outputting the control signal to the amplifying circuit.
    Type: Grant
    Filed: June 26, 2019
    Date of Patent: September 14, 2021
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Young Wong Jang, Byeong Hak Jo, Jeong Hoon Kim, Jong Ok Ha, Hyun Paek, Shinichi Iizuka
  • Patent number: 11099762
    Abstract: A semiconductor device: includes a plurality of I/O clients; a multi host controller which includes a physical host interface, a virtual host interface, an arbiter; and a system memory. The arbiter receives first transfer requests from a first one of the I/O clients via the physical host interface and receives second transfer requests from a second one of the I/O clients via the virtual host interface, and arbitrates the first transfer requests and second transfer requests. The system memory stores a first transfer request list of the first transfer requests and a second transfer request list of the second transfer requests, wherein the first and second transfer request lists include the same number of slots.
    Type: Grant
    Filed: August 23, 2019
    Date of Patent: August 24, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Nam Taek Hyung, Mi Kyung Kim, Jeong Hoon Kim
  • Patent number: 11001138
    Abstract: It is disclosed a FLVV including: an upper cover provided in the fuel tank, and having an outlet duct; a casing coupled to the upper cover; the float, which is elastically provided inside the casing so as to be movable upward and downward, has a first valve seat provided on the upper surface of one side thereof so as to open and close a first outlet port by principle of a lever, and has a recessed surface formed at one side of the upper surface thereof; the plate elastically provided by a second spring at the recessed surface formed at the float, so as to open and close a second outlet port while moving upward and downward; and a lower cover closing the lower part of the casing and having the float elastically provided by a first spring.
    Type: Grant
    Filed: July 31, 2017
    Date of Patent: May 11, 2021
    Assignee: NIFCO KOREA INC.
    Inventor: Jeong Hoon Kim
  • Patent number: 10903836
    Abstract: A radio-frequency switch includes a first series switch including a plurality of series field-effect transistors (FETs) connected in series between a first terminal and a second terminal, a first shunt switch including a plurality of shunt FETs connected in series between the first terminal and a first ground terminal, and a first shunt gate resistor circuit including a plurality of gate resistors respectively connected to gates of the plurality of shunt FETs of the first shunt switch. Respective resistance values of the plurality of gate resistors of the first shunt gate resistor circuit successively increase in a direction away from the first ground terminal toward the first terminal.
    Type: Grant
    Filed: March 27, 2020
    Date of Patent: January 26, 2021
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Byeong Hak Jo, Yoo Sam Na, Hyun Paek, Sol A Kim, Jeong Hoon Kim, Jong Mo Lim
  • Patent number: 10903794
    Abstract: A power amplifier device includes a bias circuit to generate a startup current, which is based on an internal voltage and a startup voltage, during a startup time prior to a steady driving time point, and to generate a bias current, which is based on the internal voltage, after the steady driving time point, and a startup circuit to supply the bias circuit with the startup voltage during the startup time.
    Type: Grant
    Filed: February 1, 2019
    Date of Patent: January 26, 2021
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Jong Ok Ha, Jeong Hoon Kim, Byeong Hak Jo, Shinichi Iizuka
  • Patent number: 10879853
    Abstract: A bias circuit includes a current source to generate a reference current, a temperature compensation portion in an off-state in an initial start period in response to a first control signal, and in an on-state in a normal driving period, subsequent to the initial start period, and to receive a first current of the reference current, and a bias output portion to generate a warm up current based on the reference current in the initial start period and to generate a bias current based on a second current, which is lower than the reference current by an amount of the first current, in the normal driving period.
    Type: Grant
    Filed: January 4, 2019
    Date of Patent: December 29, 2020
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Byeong Hak Jo, Jong Ok Ha, Young Wong Jang, Jeong Hoon Kim
  • Publication number: 20200403613
    Abstract: A radio-frequency switch includes a first series switch including a plurality of series field-effect transistors (FETs) connected in series between a first terminal and a second terminal, a first shunt switch including a plurality of shunt FETs connected in series between the first terminal and a first ground terminal, and a first shunt gate resistor circuit including a plurality of gate resistors respectively connected to gates of the plurality of shunt FETs of the first shunt switch. Respective resistance values of the plurality of gate resistors of the first shunt gate resistor circuit successively increase in a direction away from the first ground terminal toward the first terminal.
    Type: Application
    Filed: March 27, 2020
    Publication date: December 24, 2020
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Byeong Hak JO, Yoo Sam NA, Hyun PAEK, Sol A KIM, Jeong Hoon KIM, Jong Mo LIM
  • Patent number: 10868520
    Abstract: A radio frequency switch includes a control buffer circuit to generate a first gate voltage and a first body voltage; and a switching circuit to switch at least one signal path in response to the first gate voltage and the first body voltage. The control buffer circuit includes an off voltage detection circuit to detect whether the off voltage is a negative voltage or a ground voltage and output a voltage detection signal, a first gate buffer circuit to output a first gate voltage having a voltage level based on the voltage detection signal and the band selection signal, and a first body buffer circuit to output a first body voltage having a voltage level based on the voltage detection signal, the band selection signal, and the mode signal.
    Type: Grant
    Filed: February 1, 2019
    Date of Patent: December 15, 2020
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Byeong Hak Jo, Jeong Hoon Kim, Hyun Paek
  • Patent number: 10855176
    Abstract: A negative voltage generation circuit includes a clock generation circuit configured to generate a first clock signal, a first voltage control circuit configured to vary a first resistance value based on a magnitude of a power supply voltage and further configured to control a magnitude of a voltage in a first charge node, based on the varied first resistance value, and a first charge pump circuit configured to charge a voltage, controlled by the first voltage control circuit, in a charge mode, based on the first clock signal, and further configured to output a first voltage, generated by the charging, as a first negative voltage.
    Type: Grant
    Filed: August 9, 2019
    Date of Patent: December 1, 2020
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Byeong Hak Jo, Hyun Paek, Jeong Hoon Kim, Sol A Kim, Jong Mo Lim
  • Publication number: 20200366191
    Abstract: A negative voltage generation circuit includes a clock generation circuit configured to generate a first clock signal, a first voltage control circuit configured to vary a first resistance value based on a magnitude of a power supply voltage and further configured to control a magnitude of a voltage in a first charge node, based on the varied first resistance value, and a first charge pump circuit configured to charge a voltage, controlled by the first voltage control circuit, in a charge mode, based on the first clock signal, and further configured to output a first voltage, generated by the charging, as a first negative voltage.
    Type: Application
    Filed: August 9, 2019
    Publication date: November 19, 2020
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Byeong Hak JO, Hyun PAEK, Jeong Hoon KIM, Sol A KIM, Jong Mo LIM
  • Publication number: 20200366251
    Abstract: A bias timing control circuit includes a current source, a bias switch circuit, a duty cycle sensing circuit, and a switching control circuit. The bias switch circuit includes a first path switch, connected between an output node of the current source and a bias amplifying circuit, and a second path switch, connected between the output node of the current source and a temperature compensation circuit. The duty cycle sensing circuit is configured to generate a timing control signal based on a duty cycle of a transmission enable signal. The switching control circuit is configured to control a first turn-on time of the first path switch during an initial startup period, and a second turn-on time of the second path switch during a normal driving period subsequent to the initial startup period to adjust a warm-up time of a power amplifying circuit based on the timing control signal.
    Type: Application
    Filed: October 16, 2019
    Publication date: November 19, 2020
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Jong Ok HA, Byeong Hak JO, Jeong Hoon KIM, Young Wong JANG, Shinichi IIZUKA
  • Patent number: 10826058
    Abstract: The present invention relates to a positive electrode for a rechargeable lithium battery and a rechargeable lithium battery including the same. The positive electrode includes: a current collector; and a positive electrode active material positioned on at least one surface of the active material layer current collector. The positive electrode active material layer includes a small particle size active material having an average particle diameter D50 of 2 ?m to 4 ?m and a first coating layer positioned at a surface thereof, and a large particle size active material having an average particle diameter D50 of 17 ?m to 21 ?m and a second coating layer positioned at the surface thereof.
    Type: Grant
    Filed: May 30, 2017
    Date of Patent: November 3, 2020
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Hyun-Joo Je, Jeong-Hoon Kim, Ji-Hyun Kim, Soo-Youn Park, Chang-Wook Kim
  • Publication number: 20200306689
    Abstract: Provided are a methane-selective composite membrane comprising: a UiO-66 type organic-inorganic composite nanoporous material, a MIL-100 type organic-inorganic composite nanoporous material, or a ZIF-8 type organic-inorganic composite nanoporous material to which a methane-selective functional group is introduced for selectively separating methane from a gas mixture containing methane/nitrogen, a use thereof, and a method of preparing the same.
    Type: Application
    Filed: March 23, 2020
    Publication date: October 1, 2020
    Inventors: Jeong Hoon KIM, Chang In KONG, Yang No YUN, Su Young MOON, Bong Jun CHANG, Bo Ryoung PARK, Youn-Sang BAE, Tea-Hoon KIM
  • Publication number: 20200304631
    Abstract: An electronic device of the present disclosure may: transmit identification information corresponding to a call counterpart to an external server, using a communication circuit; receive state information of the call counterpart from the external server as a response to the transmission of the identification information; and display the state information of the call counterpart, in one area of a user interface of an application.
    Type: Application
    Filed: September 3, 2018
    Publication date: September 24, 2020
    Inventors: Jeong Hoon KIM, Jong Kyoung LIM, Jae Won KIM, Jae In YOO, Hyun Woo LEE, Jong Eun YANG
  • Patent number: 10719209
    Abstract: An electronic device is provided. The electronic device includes a memory, a display, and a processor electrically connected to the memory and the display. The processor is configured to transparently output a first screen related to a first application, if receiving a user input, change a transparency of at least a partial area of the first screen in correspondence to the user input, and output the first screen on the display.
    Type: Grant
    Filed: March 20, 2017
    Date of Patent: July 21, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Keun Soo Kim, Hyun Woong Kwon, Jeong Hoon Kim, Byung Hyuk Moon, Yong Kwon Kim, Jong Wu Baek
  • Publication number: 20200199348
    Abstract: The present invention relates to a BCDA-based semi-alicyclic homo- or co-polyimide membrane material for gas separation and a preparation method thereof. The polyimide material prepared according to the present invention has high solubility in casting solvents, particularly in polar organic solvents, by interrupting asymmetry in the polyimide chain structure and formation of polyimide complexes compared with aromatic polyimides, and has higher heat resistance than the conventional aromatic polyimides and aliphatic polyimides, so that it is useful for the process of a high-selective permeable composite membrane or a asymmetric hollow fiber membrane used for commercial purposes, suggesting that it can be effectively used as a membrane for gas separation in various fields. In addition, the polyimide material membrane for gas separation of the present invention is useful because it has superior gas separation properties to the conventional commercialized aromatic polyimides or semi-alicyclic polyimides.
    Type: Application
    Filed: November 20, 2019
    Publication date: June 25, 2020
    Inventors: Jeong Hoon Kim, Bong Jun Chang, Simon MoonGeun Jung, Su Young Moon, Chae Young Park, Hoon moh Seong
  • Publication number: 20200159439
    Abstract: A semiconductor device: includes a plurality of I/O clients; a multi host controller which includes a physical host interface, a virtual host interface, an arbiter; and a system memory. The arbiter receives first transfer requests from a first one of the I/O clients via the physical host interface and receives second transfer requests from a second one of the I/O clients via the virtual host interface, and arbitrates the first transfer requests and second transfer requests. The system memory stores a first transfer request list of the first transfer requests and a second transfer request list of the second transfer requests, wherein the first and second transfer request lists include the same number of slots.
    Type: Application
    Filed: August 23, 2019
    Publication date: May 21, 2020
    Inventors: NAM TAEK HYUNG, MI KYUNG KIM, JEONG HOON KIM
  • Patent number: D928619
    Type: Grant
    Filed: March 18, 2020
    Date of Patent: August 24, 2021
    Assignee: LUMN INC.
    Inventor: Jeong Hoon Kim