Abstract: A method of forming a high-quality graphene layer including forming a board layer; forming a stress reduction layer on the board layer; forming a metal catalyst layer on the stress reduction layer, the metal catalyst layer functioning as a catalyst for forming the graphene layer; and growing a graphene layer on the metal catalyst layer. The stress reduction layer reduces the stress of the metal thin film, thus, improving crystallinity and surface roughness of the metal thin film, and thereby effectively forming a high-quality graphene layer.

Abstract: This invention relates to a method and board for forming a graphene layer, and more particularly, to a method of forming a high-quality graphene layer using high pressure annealing and to a board used therein. The method of forming the graphene layer includes forming a reaction barrier layer on a substrate layer, forming a metal catalyst layer which functions as a catalyst for forming the graphene layer on the reaction barrier layer, subjecting a board including a stack of the layers to high pressure annealing, and growing the graphene layer on the metal catalyst layer. This board is subjected to high pressure annealing before growth of the graphene layer, and the reaction barrier layer is formed using a material having high adhesion energy to the metal catalyst layer so as to suppress migration of metal catalyst atoms.

Abstract: This invention relates to a method and board for forming a graphene layer, and more particularly, to a method of forming a high-quality graphene layer using high pressure annealing and to a board used therein. The method of forming the graphene layer includes forming a reaction barrier layer on a substrate layer, forming a metal catalyst layer which functions as a catalyst for forming the graphene layer on the reaction barrier layer, subjecting a board including a stack of the layers to high pressure annealing, and growing the graphene layer on the metal catalyst layer. This board is subjected to high pressure annealing before growth of the graphene layer, and the reaction barrier layer is formed using a material having high adhesion energy to the metal catalyst layer so as to suppress migration of metal catalyst atoms.

Abstract: This invention relates to a board and method for forming a graphene layer, and more particularly, to a board for use in forming a graphene layer, which has a structure able to improve properties of the graphene layer formed thereon, and to a method of forming a high-quality graphene layer using the same. The board of the invention includes a board layer, a metal catalyst layer formed on the board layer and functioning as a catalyst for forming the graphene layer, and a stress reduction layer disposed between the board layer and the metal catalyst layer so as to reduce stress of the metal catalyst layer, wherein the stress reduction layer able to reduce stress of the metal thin film is provided, thus improving crystallinity and surface roughness of the metal thin film, thereby effectively forming a high-quality graphene layer.

Abstract: Disclosed herein is a graphene device having a structure in which a physical gap is provided so that the off-state current of the graphene device can be significantly reduced without having to form a band gap in graphene, and thus the on/off current ratio of the graphene device can be significantly increased while the high electron mobility of graphene is maintained.

Abstract: Disclosed herein is a graphene device having a structure in which a physical gap is provided so that the off-state current of the graphene device can be significantly reduced without having to form a band gap in graphene, and thus the on/off current ratio of the graphene device can be significantly increased while the high electron mobility of graphene is maintained.

Abstract: The present invention relates to a method of forming a graphene layer, and, more particularly, to a method of forming a graphene layer which is a two-dimensional thin film composed of carbon atoms arranged in a honeycomb-style lattice and having one atom thick and which is put to practical use in the field of electric devices, transparent electrodes or microwave circuits. The method includes the steps of: (a) forming a metal thin film on a substrate; (b) injecting carbon ions into the metal thin film; and (c) heat-treating the carbon ions injected into the metal thin film to form a graphene layer on the metal thin film. The method is advantageous in that a graphene layer is formed by uniformly injecting an accurate amount of carbon ions into a metal thin film depending on the maximum solubility of carbon in the metal thin film and then heat-treating the injected carbon ions, thus uniformly forming the graphene layer on the metal thin film.