Abstract: Pairs of registers with reduced pins are disposed to overlap on front and back surfaces of a memory module. An input signal INS is transferred through the registers in series in a daisy chain fashion to avoid divergence of the input signal INS for preserved signal integrity. Each register buffers the input signal INS to memory banks disposed closely to sides of the register for reduced wiring area.

Abstract: A data transmission system and method characterized by the use of multiple differential output amplifiers to transmits differential data signals that vary in accordance with control signals derived from a reference data output strobe signal, and multiple differential amplifiers to receive the differential data signals and detect such variations to generate a data input strobe signal corresponding to the data output strobe signal.

Abstract: In the memory module, a buffer is disposed on one of at least two circuit boards in the memory module. The buffer is for buffering signals for memory chips on at least two circuit boards in the memory module.

Abstract: A buffered memory module includes a buffer circuit mounted and a plurality of memory devices mounted on the first surface of the board, the memory devices being electrically connected to the buffer circuit. The memory module also includes a plurality of test pads located on a second surface of the board and electrically connected to the buffer circuit.

Abstract: A circuit for controlling an AC-timing parameter of a semiconductor memory device and method thereof are provided. The AC-timing parameter control circuit includes a delay-time-defining portion, a comparing portion, and a controlling portion. The control circuit compares the pulse width or period of an input signal to one or more different reference-widths pulses, with the reference width(s) set by the delay-time-defining portion and the reference pulses generated by the comparing portion. The controlling portion indicates whether the input signal width or period was less than or greater than each o the reference-width pulses. The control circuit output signals can be used to tailor the operation of the device based on a direct comparison of an AC-timing parameter to one or more reference values.

Abstract: A circuit for controlling an AC-timing parameter of a semiconductor memory device and method thereof are provided. The AC-timing parameter control circuit includes a delay-time-defining portion, a comparing portion, and a controlling portion. The control circuit compares the pulse width or period of an input signal to one or more different reference-widths pulses, with the reference width(s) set by the delay-time-defining portion and the reference pulses generated by the comparing portion. The controlling portion indicates whether the input signal width or period was less than or greater than each o the reference-width pulses. The control circuit output signals can be used to tailor the operation of the device based on a direct comparison of an AC-timing parameter to one or more reference values.