Abstract: The present invention relates to a method for producing a polyacrylonitrile-based fiber, wherein the method polymerizes a monomer mixture including an acrylonitrile-based monomer, a carboxylic acid-based comonomer, and an acrylate-based comonomer, wherein the acrylate-based comonomer includes the steps of producing a polyacrylonitrile-based copolymer so as to be included in an amount of 4 to 20 parts by weight based on 100 parts by weight of the monomer mixture, fiberizing the polyacrylonitrile-based copolymer, oxidizing and stabilizing the fiberized polyacrylonitrile-based copolymer, which may control the oxidation stabilization reaction, particularly the cyclization reaction. Accordingly, the energy consumption of the oxidation stabilization reaction may be reduced, economical efficiency of the production of polyacrylonitrile-based fiber may be obtained, and the physical and mechanical properties of the carbon fiber may be improved.

Abstract: The present invention relates to an anti-reflective film exhibiting one or more peaks at a scattering vector (qmax) of 0.0758 to 0.1256 nm?1, in a graph showing a log value of scattering intensity to a scattering vector defined in small-angle X-ray scattering.

Abstract: The present application relates to a block copolymer and its use. The present application can provides a block copolymer that has an excellent self assembling property or phase separation property and therefore can be used in various applications and its use.

Abstract: The present invention relates to an ethylene/alpha-olefin copolymer and, more particularly, to an ethylene/alpha-olefin copolymer that exhibits excellent environmental stress crack resistance by appropriately controlling the ratio of crystal structure domain and amorphous domain, and the like. The ethylene/alpha-olefin copolymer comprises an ethylene repeating unit and an alpha-olefin repeating unit, and has a crystal structure including a crystalline domain containing lamellar crystals and an amorphous domain containing a tie molecule that mediates bonding between the lamellar crystals. The lamellar crystal thickness (dc) of the ethylene/alpha-olefin copolymer as calculated from the result of Small Angle X-ray Scattering (SAXS) analysis is between 12.0 and 16.0 nm, the amorphous domain thickness (da) is between 4.0 and 5.3 nm, and the thickness ratio da/dc is between 0.3 and 0.4.

Abstract: The present application relates to a block copolymer and uses thereof. The present application can provide a block copolymer—which exhibits an excellent self-assembling property and thus can be used effectively in a variety of applications—and uses thereof.

Abstract: A clutch actuator includes: a reduction gear to rotate in a housing by a motor; a connecting rod having a first end connected to the reduction gear; a pair of levers provided on a hinge shaft in the housing, and connected to a second end of the connecting rod to rotate according to a rotation of the reduction gear; a push rod contacting with a clutch actuator fork; and a wear compensating unit movably coupled between the levers in a vertical direction and provided with an inclined surface contacting a first cam. In particular, the push rod has one end extended outwardly of the housing and is coupled with the first cam of which one end is movably inserted into the first hole of the levers.

Abstract: The present application provides the block copolymers and their application. The present application may provide the block copolymers that have excellent self assembling and phase separation properties and therefore that can be effectively used in various applications. The present application may also provide applications of the block copolymers.

Abstract: The present application provides the block copolymers and their application. The present application may provide the block copolymers that have excellent self assembling and phase separation properties and therefore that can be effectively used in various applications. The present application may also provide applications of the block copolymers.

Abstract: The present application provides the block copolymers and their application. The present application may provide the block copolymers that have excellent self assembling and phase separation properties and therefore that can be effectively used in various applications. The present application may also provide applications of the block copolymers.

Abstract: The present invention relates to an anti-reflective film exhibiting one or more peaks at a scattering vector (qmax) of 0.0758 to 0.1256 nm?1, in a graph showing a log value of scattering intensity to a scattering vector defined in small-angle X-ray scattering.

Abstract: A clutch actuator includes: a reduction gear to rotate in a housing by a motor; a connecting rod having a first end connected to the reduction gear; a pair of levers provided on a hinge shaft in the housing, and connected to a second end of the connecting rod to rotate according to a rotation of the reduction gear; a push rod contacting with a clutch actuator pork; and a wear compensating unit movably coupled between the levers in a vertical direction and provided with an inclined surface contacting a first cam. In particular, the push rod has one end extended outwardly of the housing and is coupled with the first cam of which one end is movably inserted into the first hole of the levers.

Abstract: The present application relates to a block copolymer and its use. The present application can provides a block copolymer that has an excellent self assembling property or phase separation property and therefore can be used in various applications and its use.

Abstract: The present application relates to a block copolymer and its use. The present application can provides a block copolymer that has an excellent self assembling property or phase separation property and therefore can be used in various applications and its use.

Abstract: The present application relates to a block copolymer and uses thereof. The present application can provide a block copolymer—which exhibits an excellent self-assembling property and thus can be used effectively in a variety of applications—and uses thereof.

Abstract: The present application provides the block copolymers and their application. The present application may provide the block copolymers that have excellent self assembling and phase separation properties and therefore that can be effectively used in various applications. The present application may also provide applications of the block copolymers.

Abstract: The present application provides the block copolymers and their application. The present application may provide the block copolymers that have excellent self assembling and phase separation properties and therefore that can be effectively used in various applications. The present application may also provide applications of the block copolymers.

Abstract: The present application provides the block copolymers and their application. The present application may provide the block copolymers that have excellent self assembling and phase separation properties and therefore that can be effectively used in various applications. The present application may also provide applications of the block copolymers.

Abstract: Semiconductor devices and methods of manufacturing the semiconductor devices are provided. The methods may include forming a sacrificial gate pattern on a substrate, forming a first spacer on a sidewall of the sacrificial gate pattern and forming a first interlayer dielectric (ILD) layer covering a sidewall of the first spacer and exposing a top surface of the first spacer. The first spacer may expose an upper portion of the sidewall of the sacrificial gate pattern. The methods may also include forming a capping insulating pattern covering top surfaces of the first spacer and the first ILD layer, replacing the sacrificial gate pattern with a gate electrode structure and patterning the capping insulating pattern to form a second spacer on the first spacer and between the gate electrode structure and the first ILD layer. The second spacer may be formed of a material having a dielectric constant higher than a dielectric constant of the first spacer.

Abstract: Semiconductor devices and methods of manufacturing the semiconductor devices are provided. The methods may include forming a sacrificial gate pattern on a substrate, forming a first spacer on a sidewall of the sacrificial gate pattern and forming a first interlayer dielectric (ILD) layer covering a sidewall of the first spacer and exposing a top surface of the first spacer. The first spacer may expose an upper portion of the sidewall of the sacrificial gate pattern. The methods may also include forming a capping insulating pattern covering top surfaces of the first spacer and the first ILD layer, replacing the sacrificial gate pattern with a gate electrode structure and patterning the capping insulating pattern to form a second spacer on the first spacer and between the gate electrode structure and the first ILD layer. The second spacer may be formed of a material having a dielectric constant higher than a dielectric constant of the first spacer.

Abstract: A semiconductor device is manufactured using an expandable material. The method includes forming a first gate insulating layer on a substrate, forming first and second gate structures on the first gate insulating layer, the first and second gate structures being spaced apart from each other at a distance, forming an expandable material on sidewalls and upper surfaces of the first and second gate structures, forming a gap-fill layer on the expandable material between the first and second gate structures, and performing a heat-treatment process to increase the volume of the expandable material.