Abstract: An acid-amplifier having an acetal group and a photoresist composition including the same, are disclosed. The acid-amplifier produces an acid (second acid) during a post-exposure-bake (PEB), which is induced by an acid (first acid) generated from a photo-acid generator (PAG) at the exposure process so that a line edge roughness (LER) of the photoresist pattern and photoresist energy sensitivity are improved. The acid-amplifier has a structure of following Formula 1. in Formula 1, R is C4˜C20 mono-cyclic or multi-cyclic saturated hydrocarbon, R1 is C1˜C10 linear hydrocarbon, C1˜C10 perfluoro compound or C5˜C20 aromatic compound, Ra and Rb are independently hydrogen atom or C1˜C4 saturated hydrocarbon and A is independently oxygen atom (0) or sulfur atom (S).

Abstract: Disclosed are a photo-sensitive compound and a photoresist composition containing the same, for forming ultra-fine photoresist patterns. The photo-sensitive compound is resented by following Formula 1, wherein x is an integer of 1 to 5, y is an integer of 2 to 6, R is a C2˜C20 hydrocarbon group. The photoresist composition comprises 1˜85 weight % of a photo-sensitive compound represented by following Formula 1, 1˜55 weight % of a compound which reacts with a hydroxyl group (—OH) of the compound represented by Formula 1 to combine with the photo-sensitive compound represented by Formula 1; 1˜15 weight % of a photo-acid generator; and 12˜97 weight % of an organic solvent.

Abstract: A polymer which has siloxane group at a main chain thereof and a composition including the same, for forming an organic anti-reflective coating layer are disclosed. The polymer for forming an organic anti-reflective coating layer is represented by following Formula. In Formula, R is hydrogen atom, C1˜C20 alkyl group, C1˜C10 alcohol group or epoxy group, R1 is independently hydrogen atom, n is an integer of 1-50, R2 is C1˜C20 alkyl group, C3˜C20 cycloalkyl group, C6˜C20 aryl group or C7˜C12 arylalkyl group, R3 is hydrogen atom, C1˜C10 alcohol group or epoxy group and POSS is a polyhedral oligosilsesquioxane.

Abstract: A monomer for forming an organic anti-reflective coating layer, a polymer thereof and a composition including the same are disclosed. In a photolithography process, the organic anti-reflective coating layer absorbs an exposed light between a layer to be etched and a photoresist layer, and prevents a photoresist pattern from collapsing due to a standing wave generated under the photoresist layer. The polymer for forming an organic anti-reflective coating layer includes a repeating unit represented by Formula wherein, R1 is a hydrogen atom, a methyl group or an ethyl group, R2 is a C1˜C20 alkylene group, a C3˜C20 cycloalkylene group or a C6˜C20 aromatic hydrocarbon group, POSS is a polyhedral-oligomeric-silsesquioxane, and m is an integer of 2 to 110.

Abstract: A flowering time-controlling gene, COG2, isolated from Arabidopsis thaliana, and a protein expressed therefrom delay the flowering time of a plant and, accordingly, are useful for improving a flowering-associated character of a plant and for the identification of other flowering-associated genes or proteins.