Abstract: Methods and apparatus for controlling a gas cluster ion beam formed from a plurality of process gases in a gas mixture. The methods and apparatus involve measuring gas analysis data relating to the composition of the gas mixture and modifying the irradiation of the workpiece in response to the detected parameter. The gas analysis data can be derived from samples of the composition of the gas mixture flowing from a gas source to the gas cluster ion beam apparatus or samples of the residual gases inside the vacuum vessel of the gas cluster ion beam apparatus.

Abstract: Methods and apparatus for controlling a gas cluster ion beam formed from a plurality of process gases in a gas mixture. The methods and apparatus involve measuring gas analysis data relating to the composition of the gas mixture and modifying the irradiation of the workpiece in response to the detected parameter. The gas analysis data can be derived from samples of the composition of the gas mixture flowing from a gas source to the gas cluster ion beam apparatus or samples of the residual gases inside the vacuum vessel of the gas cluster ion beam apparatus.

Abstract: The invention provides methods and apparatus for measuring the distribution of cluster ion sizes in a gas cluster ion beam (GCIB) and for determining the mass distribution and mass flow of cluster ions in a GCIB processing system without necessitating the rejection of a portion of the beam through magnetic or electrostatic mass analysis. The invention uses time-of-flight measurement to estimate or monitor cluster ion size distribution either before or during processing of a workpiece. The measured information is displayed and incorporated in automated control of a GCIB processing system.

Abstract: A detector apparatus and its use for cluster ion beam diagnostics are described. The detector has a Faraday cup with a conductance path to a gas pressure detector and a conductance to the detector exit. The detector acquires ion current, which is a measure of the ion beam flux, and also acquires mass flux, through a pressure measurement. The pressure measurement responds to the mass of dissociated gas clusters and is combined with information about instantaneous ion current to estimate mean gas cluster ion size ({overscore (N)}i).

Abstract: Incorporating the use of a permanent magnet within a GCIB apparatus to separate undesirable monomer ions from a gas cluster ion beam to facilitate improved processing of workpieces. In an alternate embodiment, the effect of the permanent magnet may be controlled by the use of an electrical coil. The above system eliminates problems related to power consumption and heat generation.

Abstract: A neutral beam ionizing apparatus for electron impact ionization of a substantially cylindrical neutral beam. The apparatus includes an electron source, and a circularly cylindrical ionizing region that is substantially free of magnetic fields. In one embodiment of the invention, the beam is a gas cluster beam, and the electron source includes a heated filament for emitting thermions, the filament including one or more direction reversals shaped to produce self-nulling magnetic fields so as to minimize the magnetic field due to filament heating current. In another embodiment of the invention, a neutral beam ionizing apparatus for electron impact ionization of a substantially cylindrical neutral beam includes at least one electron source, and an elliptically cylindrical ionizing region.

Abstract: A gas cluster ion beam (GCIB) etching process having a system for producing a gas cluster ion beam utilized to controllably etch a substrate. The gas cluster ion beam is initially directed along a preselected longitudinal axis. A portion of the GCIB etching apparatus is operably connected to the beam producing system and contains the substrate to be etched when impacted by said gas cluster ion beam. The portion of the GCIB etching apparatus includes a system for directing the gas cluster ion beam in a direction offset from the preselected longitudinal axis while permitting unwanted ionizing radiation to remain directed along the longitudinal axis. A substrate holder is located within a portion of the GCIB etching apparatus for positioning the substrate in line with the offset gas cluster ion beam during the etching process, and the unwanted ionizing radiation being substantially prevented from impinging upon the substrate during the etching process.

Abstract: A neutral beam ionizing apparatus for electron impact ionization of a substantially cylindrical neutral beam. The apparatus includes an electron source, and a circularly cylindrical ionizing region that is substantially free of magnetic fields. In one embodiment of the invention, the beam is a gas cluster beam, and the electron source includes a heated filament for emitting thermions, the filament including one or more direction reversals shaped to produce self-nulling magnetic fields so as to minimize the magnetic field due to filament heating current. In another embodiment of the invention, a neutral beam ionizing apparatus for electron impact ionization of a substantially cylindrical neutral beam includes at least one electron source, and an elliptically cylindrical ionizing region.

Abstract: The invention provides methods and apparatus for measuring the distribution of cluster ion sizes in a gas cluster ion beam (GCIB) and for determining the mass distribution and mass flow of cluster ions in a GCIB processing system without necessitating the rejection of a portion of the beam through magnetic or electrostatic mass analysis. The invention uses time-of-flight measurement to estimate or monitor cluster ion size distribution either before or during processing of a workpiece. The measured information is displayed and incorporated in automated control of a GCIB processing system.

Abstract: A gas cluster ion beam (GCIB) etching process having a system for producing a gas cluster ion beam utilized to controllably etch a substrate. The gas cluster ion beam is initially directed along a preselected longitudinal axis. A portion of the GCIB etching apparatus is operably connected to the beam producing system and contains the substrate to be etched when impacted by said gas cluster ion beam. The portion of the GCIB etching apparatus includes a system for directing the gas cluster ion beam in a direction offset from the preselected longitudinal axis while permitting unwanted ionizing radiation to remain directed along the longitudinal axis. A substrate holder is located within a portion of the GCIB etching apparatus for positioning the substrate in line with the offset gas cluster ion beam during the etching process, and the unwanted ionizing radiation being substantially prevented from impinging upon the substrate during the etching process.

Abstract: A detector apparatus and its use for cluster ion beam diagnostics are described. The detector has a Faraday cup with a conductance path to a gas pressure detector and a conductance to the detector exit. The detector acquires ion current, which is a measure of the ion beam flux, and also acquires mass flux, through a pressure measurement. The pressure measurement responds to the mass of dissociated gas clusters and is combined with information about instantaneous ion current to estimate mean gas cluster ion size ({overscore (N)}i).

Abstract: A gas cluster ion beam (GCIB) etching apparatus having a system for producing a gas cluster ion beam utilized to controllably etch a substrate. The gas cluster ion beam is initially directed along a preselected longitudinal axis. A portion of the GCIB etching apparatus is operably connected to the beam producing system and contains the substrate to be etched when impacted by said gas cluster ion beam. The portion of the GCIB etching apparatus includes a system for directing the gas cluster ion beam in a direction offset from the preselected longitudinal axis while permitting unwanted ionizing radiation to remain directed along the longitudinal axis. A substrtate holder is located within a portion of the GCIB etching apparatus for positioning the substrate in line with the offset gas cluster ion beam during the etching process, and the unwanted ionizing radiation being substantially prevented from impinging upon the substrate during the etching process.

Abstract: Incorporating the use of a permanent magnet within a GCIB apparatus to separate undesirable monomer ions from a gas cluster ion beam to facilitate improved processing of workpieces. In an alternate embodiment, the effect of the permanent magnet may be controlled by the use of an electrical coil. The above system eliminates problems related to power consumption and heat generation.

Abstract: An ion beam implantation system. An ion beam is controllably deflected from an initial trajectory as it passes through spaced parallel plates that are biased by a control circuit. Once deflected, the ion beam passes through electrodes positioned along a beam travel path that both redeflect the once-deflected ion beam and accelerate the ions to a desired final energy. Ions within the beam exit the accelerator and impact a workpiece at a uniform, controlled impact angle due to ion focusing in a scanning plane and an orthogonal cross plane.

Abstract: An ion beam implantation system. An ion beam is controllably deflected from an initial trajectory as it passes through spaced parallel plates that are biased by a control circuit. Once deflected, the ion beam enters an accelerator that both redeflects the once deflected ion beam and acceleratres the ions to a desired final energy. When the beam exits the accelerator it moves along a trajectory that impacts a workpiece. Ions making up the ion beam all impact the workpiece at a uniform, controlled impact angle.

Abstract: A defining aperture for an ion implanter in which wafers are implanted at high tilt angles, which aperture is configured to project a substantially circular beam pattern on the surface of the tilted wafer. One embodiment includes one or more movable aperture plates having elliptical apertures formed therein operating in conjunction with a fixed aperture plate having a circular aperture. Other embodiments include movable elliptical apertures, and a circular aperture rotatable about an axis perpendicular to the tilt axis of the wafer. Where an electron flood ring is used, one or more movable rings having elliptical apertures opening can be used.

Abstract: A method and apparatus for controlling the ion dose implanted in a semiconductor wafer. The wafer is received on a platen which is rotated in discrete steps by a stepper motor. With the wafer in an initial stationary position the dose accumulated by the wafer is measured. When the incremental measured dose equals the total dose to be implanted divided by a predetermined number of steps over which the implant is to be carried out, the motor is stepped one increment. This process is then repeated until the total desired dose is attained.

Abstract: A scanning ion beam implanter having a wafer support to control the angle of incidence between an ion beam and the wafer. The wafer support preferably bends the wafer into a segment of a cylinder. As the ion beam scans across the curved wafer surface the angle of incidence remains relatively uniform. The support also includes structure for pivoting the bent wafer about a pivot axis. The pivoting of the wafer is synchronized with the scanning of the ion beam to compensate for scanning of the ion beam in a direction transverse to the direction compensated for by the cylindrical curvature of the wafer.

Abstract: An apparatus and method for measuring the atomic mass of ion species selected by the analyzing magnet (14) of an ion implanter (10). A signal proportional to the magnetic field of the analyzing magnet is obtained by means of a rotating coil (36), and this signal is used to calculate the atomic mass by means of the equation: Atomic Mass=KB.sup.2 /V where B is the magnetic field, V is the ion beam energy at the analyzing magnet, and K is a proportionality constant. The rotating coil (36) is driven by a synchronous motor (38) powered by A.C. line voltage, and the output voltage is converted to a frequency signal proportional to the magnetic field and the line frequency. The frequency signal is counted over a time corresponding to the period of the line frequency to cancel out the line frequency dependence of the frequency signal. In accordance with one embodiment of the invention, a microprocessor is utilized to evaluate the B and V signals and to calculate the atomic mass.

Abstract: Heartbeat data is measured and converted into a series of electrical output pulses, the frequency of which is related to the heartbeat pulse rate. The output pulses trigger "on" and "off" a timing device, and the average time of a heartbeat cycle is then converted into a heartbeat pulse rate and displayed. The timing device includes a means for delaying a first specified number of output pulses before beginning the sampling period and registering a count of clock pulses which represents the time period of a second specified number of the output pulses occurring subsequently to the first specified number of output pulses.