Abstract: A method of identifying a target analyte in which a sample containing a light-emitting marker configured to bind to the target analyte is irradiated and emission from the light-emitting marker is detected. The light-emitting marker comprises a light-emitting material comprising a group of formula (I): X is one of N and B and Y is the other of N and B; Ar1 and Ar2 independently are an unsubstituted or substituted an aromatic or heteroaromatic group which is unsubstituted or substituted with one or more substituents. Ar1 and Ar2 bound to the same X group may be linked by a direct bond or a divalent group. The group of formula (I) may be a repeat unit of a light-emitting polymer. The light-emitting marker may be used in flow cytometry.

Abstract: Provided herein are nanocrystal assemblies comprising quantum dots, a dopant (e.g., an organic compound dopant), and a ligand bridging the quantum dots. Also provided are methods of preparing the assemblies and devices comprising the assemblies (e.g., field effect transistors, thermoelectric generators).

Abstract: We describe a method for reducing a parasitic resistance at an interface between a conducting electrode region and an organic semiconductor in a thin film transistor, the method comprising: providing a solution comprising a dopant for doping said semiconductor, and depositing said solution onto said semiconductor and/or said conducting electrode region to selectively dope said semiconductor adjacent said interface between said conducting electrode region and said semiconductor, wherein depositing said solution comprises inkjet-printing said solution.

Abstract: A sensor comprising a light source (103); a photodetector (105); a sample receptacle such as a microfluidic device (101) between the light source and the photodetector; and one or both of a first light filter (107) and a second light filter (109) wherein the first light filter is provided between the sample receptacle and the photodetector and the second light filter is provided between the sample receptacle and the light source. The first light filter may comprise tartrazine. The second light filter may comprise Coomassie violet R200, Victoria Blue B or acid fuchsin. In use, light h?1 emitted from the light source is absorbed by a luminescent indicator in the sample receptacle which then emits light h?2 detected by the photodetector.

Abstract: The present invention relates to a compound of general formula (I) which can transport holes in an organic optoelectronic device, and to blends and solutions comprising the compound of general formula (I): wherein X is C, Si or Ge; A is a group of formula (II) wherein Z is N, P, NH, O or S; E is C1-10 alkyl or H; W is substituted or unsubstituted C5-14 aryl or substituted or unsubstituted C6-16 alkyl; e is an integer from 1 to 4; and z is 1 or 2; B, C and D are each independently A, H, C1-C12 alkyl, C5-14 aryl or OH; and a, b, c and d are each independently an integer from 1 to 5.

Abstract: Fluorescence-based sensors having favourably low detection limits and high sensitivity are disclosed. The sensors comprise one or more solution processable colour filters that are used together with organic LEDs and photodiodes. The colour filters are used to narrow the wavelength range of the OLED emission and/or to reject any light from reaching the photodiode which is not from analyte fluorescence, thereby enhancing the device sensitivity.

Abstract: An organic light emitting device having a layered structure comprising: a getter layer (6); an adhesive layer (5); a non-transparent cathode layer (4); a light-emitting layer (3); and a transparent anode layer (2); wherein the getter layer or adhesive layer include light absorbing materials to improve contrast in use.

Abstract: We describe a method for reducing a parasitic resistance at an interface between a conducting electrode region and an organic semiconductor in a thin film transistor, the method comprising: providing a solution comprising a dopant for doping said semiconductor, and depositing said solution onto said semiconductor and/or said conducting electrode region to selectively dope said semiconductor adjacent said interface between said conducting electrode region and said semiconductor, wherein depositing said solution comprises inkjet-printing said solution.

Abstract: An organic thin film transistor comprising source and drain electrodes (103, 105); a semiconducting region between the source and drain electrodes; a charge-transporting layer (107) comprising a charge-transporting material extending across the semiconducting region and in electrical contact with the source and drain electrodes; an organic semiconducting layer (109) comprising an organic semiconductor extending across the semiconducting region; a gate electrode (113); and a gate dielectric (111) between the gate electrode and the organic semiconducting layer.

Abstract: The present invention relates to a compound of general formula (I) which can transport holes in an organic optoelectronic device, and to blends and solutions comprising the compound of general formula (I): wherein X is C, Si or Ge; A is a group of formula (II) wherein Z is N, P, NH, O or S; E is C1-10 alkyl or H; W is substituted or unsubstituted C5-14 aryl or substituted or unsubstituted C6-16 alkyl; e is an integer from 1 to 4; and z is 1 or 2; B, C and D are each independently A, H, C1-C12 alkyl, C5-14 aryl or OH; and a, b, c and d are each independently an integer from 1 to 5.

Abstract: A polymer comprises repeat units of formula (I): wherein: R1 independently in each occurrence is a substituent, and two substituents R1 may be linked to form a ring; R2 in each occurrence independently is H or a substituent, and two substituents R2 may be linked to form a ring; R3 independently in each occurrence is a substituent; Ar1 independently in each occurrence is an aryl or heteroaryl group that may be unsubstituted or substituted with one or more substituents; x is 0, 1 or 2; y is 0, 1 or 2; and z independently in each occurrence is 0, 1 or 2. Such repeat units have a relatively deep LUMO level that may reduce the barrier to transport of electrons from the electron-transporting layer to the light-emitting layer of an organic light emitting diode having an active layer comprising such a polymer.

Abstract: This invention generally relates to an optoelectronic device and a method of fabricating such a device, and more particularly to an optoelectronic device comprising an anode layer, a semiconductive layer provided over the anode layer, and a cathode layer provided over the semiconductive layer, the anode layer comprising a plurality of electrically conductive tracks connected together and spaced apart from one another with gaps therebetween, the device further comprising a first and one or more further hole injection layers provided between the anode layer and the semiconductive layer and extending across said gaps, wherein the first hole injection layer has a conductivity greater than the conductivity of the one or more further hole injection layers.

Abstract: An organic semiconductor composition including at least one solvent, a polymer, a first small molecule organic semiconductor and a small molecule crystallization modifier. The first small molecule organic semiconductor:small molecule crystallization modifier weight ratio is at least 6:1, optionally at least 10:1, optionally at least 20:1. The small molecule crystallization modifier increases the uniformity of the first small molecule organic semiconductor distribution in an organic semiconductor layer deposited in the channel of an organic transistor, with the effect that the mobility of the organic transistor is higher than the mobility of an organic device including a composition without the small molecule crystallization modifier.

Abstract: A method is provided to produce an opto-electronic device comprising a substrate, a first electrode layer, a second electrode layer of opposite polarity to said first electrode layer, any interlayers and, between said first and second electrode layers, a first functional material in interfacial contact with a second functional material, wherein the first functional material has the structure of a laterally porous film and the second functional material is a film disposed over and interpenetrating with the film of the first functional material.

Abstract: An electronic device comprising: an electronic substrate comprising circuit elements; a double bank well-defining structure disposed over the electronic substrate, the double bank well-defining structure comprising a first layer of insulating material and a second layer of insulating material thereover, the second layer of insulating material having a lower wettability than the first layer of insulating material; and organic semiconductive material disposed in wells defined by the double bank well-defining structure.

Abstract: We describe method of manufacturing an organic electronic device, the method comprising: providing an intermediate stage substrate (200), the substrate bearing a plurality of layers of material of said organic electronic device, the layers including at least one conducting layer in thermal contact with at least one organic layer of said organic electronic device; processing said intermediate stage substrate by inductive heating of said conducting material to heat said at least one organic layer to produce a processed substrate; and using said processed substrate to provide said organic electronic device.

Abstract: This invention generally relates to planarisation of a surface of a substrate. In an embodiment of planarising a surface region of a substrate, the substrate having a body on a portion of said surface region, the method comprises: modifying the wetability of a surface of said body with respect to a liquid planariser composition by providing a surface modifying layer such as a self-assembled monolayer thereon; and then depositing the liquid planariser composition on said substrate and said body such that the planariser composition wets said surface region, wherein said surface modifying layer determines a contact angle of said liquid planariser composition to said surface of said body such that the deposited liquid planariser composition is repelled from said surface of said body.

Abstract: This invention generally relates to an optoelectronic device and a method of fabricating such a device, and more particularly to an optoelectronic device comprising an anode layer, a semiconductive layer provided over the anode layer, and a cathode layer provided over the semiconductive layer, the anode layer comprising a plurality of electrically conductive tracks connected together and spaced apart from one another with gaps therebetween, the device further comprising a first and one or more further hole injection layers provided between the anode layer and the semiconductive layer and extending across said gaps, wherein the first hole injection layer has a conductivity greater than the conductivity of the one or more further hole injection layers.

Abstract: An organic semiconductor composition comprises at least one solvent, a polymer, a first small molecule organic semiconductor and a small molecule crystallization modifier. The first small molecule organic semiconductor:small molecule crystallization modifier weight ratio is at least 6:1, optionally at least 10:1, optionally at least 20:1. The small molecule crystallization modifier increases the uniformity of the first small molecule organic semiconductor distribution in an organic semiconductor layer deposited in the channel of an organic transistor, with the effect that the mobility of the organic transistor is higher than the mobility of an organic device comprising a composition without the small molecule crystallization modifier.

Abstract: An organic electroluminescent device having a plurality of pixels, the device comprising: an anode formed on a substrate; an organic electroluminescent layer formed on the anode in each well of a well-defining layer to form the plurality of pixels; a cathode layer on the electroluminescent layer and a layer of metal on the top surface of the well-defining layer; wherein a conductive layer is deposited over the cathode layer and the metal layer to electrically connect the cathode layer on the electroluminescent layer with the metal layer on the top surface of the well-defining layer.