Abstract: A method for performing differential double sampling and a CMOS image sensing device for performing the same. In one example, the CMOS image sensing device includes a pixel array include a multitude of pixels with each pixel formed by a plurality of photodiodes, a floating diffusion point and a plurality of transistors electrically coupled the plurality of photodiodes. Moreover, a column readout circuit with four storage capacitors is selectively coupled to the pixel array by switches so that the storage capacitors can store sampled pixel values. A control circuit connected to the pixel array and the column readout circuit selectively activates the transistors to output to the column readout circuit sampled dark value and bright values of one photodiode and a sampled double bright value of the one photodiode and one additional photodiode.

Abstract: A camera using a CMOS image sensor based on a shared pixel array technology avails both high definition (HD) and ultra-high definition (UHD) resolution mode formats. Dynamic pixel management allows for both sequential and binned timing formats of pixel signals using switched capacitor noise reduction techniques. When UHD resolution mode is selected, noise can be reduced using both digital double sampling (DDS) or differential digital double sampling (dDDS), and when HD resolution mode is selected noise can be reduced using DDS. Additionally, both rolling shutter and global shutter modes can be selected when HD resolution mode is selected.

Abstract: An apparatus for HDR image processing is provided. The apparatus determines an imaging sensitivity value. The apparatus then compares subsets of imaging information with the determined imaging sensitivity value and applies a gamma correction to each subset of imaging information using a gamma low contrast curve or a gamma high contrast curve based on the comparison to obtain the gamma corrected subset of imaging information.

Abstract: A method for performing differential double sampling and a CMOS image sensing device for performing the same. In one example, the CMOS image sensing device includes a pixel array include a multitude of pixels with each pixel formed by a plurality of photodiodes, a floating diffusion point and a plurality of transistors electrically coupled the plurality of photodiodes. Moreover, a column readout circuit with four storage capacitors is selectively coupled to the pixel array by switches so that the storage capacitors can store sampled pixel values. A control circuit connected to the pixel array and the column readout circuit selectively activates the transistors to output to the column readout circuit sampled dark value and bright values of one photodiode and a sampled double bright value of the one photodiode and one additional photodiode.

Abstract: A camera using a CMOS image sensor based on a shared pixel array technology avails both high definition (HD) and ultra-high definition (UHD) resolution mode formats. Dynamic pixel management allows for both sequential and binned timing formats of pixel signals using switched capacitor noise reduction techniques. When UHD resolution mode is selected, noise can be reduced using both digital double sampling (DDS) or differential digital double sampling (dDDS), and when HD resolution mode is selected noise can be reduced using DDS. Additionally, both rolling shutter and global shutter modes can be selected when HD resolution mode is selected.

Abstract: A CMOS image sensor with reducing interconnections is provided. The CMOS image sensor may include a first row of pixels that includes a first pixel. The first pixel may include a first plurality of photodiodes and a first plurality of transfer gates. Each of the first plurality of photodiodes may be associated with a corresponding one of the first plurality of transfer gates. The CMOS image sensor may include a second row of pixels that includes a second pixel. The second pixel may include a second plurality of photodiodes and a second plurality of transfer gates. Each of the second plurality of photodiodes may be associated with a corresponding one of the second plurality of transfer gates. A first one of the transfer gates of the first plurality of transfer gates may be coupled to a first one of the transfer gates of the second plurality of transfer gates.

Abstract: An apparatus for HDR image processing is provided. The apparatus determines an imaging sensitivity value. The apparatus then compares subsets of imaging information with the determined imaging sensitivity value and applies a gamma correction to each subset of imaging information using a gamma low contrast curve or a gamma high contrast curve based on the comparison to obtain the gamma corrected subset of imaging information.

Abstract: An image sensor that provides global shutter scanning with exposure time control during image capture. The image sensor includes a pixel array with shared pixel units that each include four photodiodes with a floating diffusion node shared therebetween and respective global shutter gates disposed between each photodiode and a supply voltage of the pixel array. Moreover, an image capture timing controller controls an exposure time of each photodiode by adjusting a width of a global shutter reset pulse applied to the plurality of global shutter gates after each readout cycle during image capture to change the respective exposure time of each shared pixel unit.

Abstract: An image processor is provided for correcting brightness of saturated pixels of a captured image. The image processor can include a pixel saturation determiner that whether one or more pixels in an image sensor have been saturated by comparing pixel brightness levels of the pixels to a predetermined saturation threshold. Moreover, the image processor includes an image enhancer that generates a corrected image without artifacts due to the saturated pixel(s) by replacing the pixel brightness of the saturated pixel(s) with a pixel correction value that is based on a pixel brightness of one or more unsaturated pixel in the image sensor.

Abstract: An apparatus for HDR image processing is provided. The apparatus determines an imaging sensitivity value. The apparatus then compares subsets of imaging information with the determined imaging sensitivity value and applies a gamma correction to each subset of imaging information using a gamma low contrast curve or a gamma high contrast curve based on the comparison to obtain the gamma corrected subset of imaging information.

Abstract: A CMOS image sensor with reducing interconnections is provided. The CMOS image sensor may include a first row of pixels that includes a first pixel. The first pixel may include a first plurality of photodiodes and a first plurality of transfer gates. Each of the first plurality of photodiodes may be associated with a corresponding one of the first plurality of transfer gates. The CMOS image sensor may include a second row of pixels that includes a second pixel. The second pixel may include a second plurality of photodiodes and a second plurality of transfer gates. Each of the second plurality of photodiodes may be associated with a corresponding one of the second plurality of transfer gates. A first one of the transfer gates of the first plurality of transfer gates may be coupled to a first one of the transfer gates of the second plurality of transfer gates.

Abstract: A system and method is provided for performing high dynamic range digital double sampling. More particularly, a CMOS image sensor is provided that includes a pixel array with each pixel sampling both dark and bright values for digital double sampling. After the sampled signals are digitized, a mean dark value is determined and each dark value is further fed to a lookup table that generates an output value taking into account whether the pixel has been saturated. In over exposed conditions, the lookup table will generate a negative value output to eliminate image artifacts. All three values are fed to adder logic circuit that subtracts the mean dark value and the lookup table output from the bright value. This resulting output is fed to a video viewer.

Abstract: A method for performing differential double sampling and a CMOS image sensing device for performing the same. In one example, the CMOS image sensing device includes a pixel array include a multitude of pixels with each pixel formed by a plurality of photodiodes, a floating diffusion point and a plurality of transistors electrically coupled the plurality of photodiodes. Moreover, a column readout circuit with four storage capacitors is selectively coupled to the pixel array by switches so that the storage capacitors can store sampled pixel values. A control circuit connected to the pixel array and the column readout circuit selectively activates the transistors to output to the column readout circuit sampled dark value and bright values of one photodiode and a sampled double bright value of the one photodiode and one additional photodiode.

Abstract: A camera using a CMOS image sensor based on a shared pixel array technology avails both high definition (HD) and ultra-high definition (UHD) resolution mode formats. Dynamic pixel management allows for both sequential and binned timing formats of pixel signals using switched capacitor noise reduction techniques. When UHD resolution mode is selected, noise can be reduced using both digital double sampling (DDS) or differential digital double sampling (dDDS), and when HD resolution mode is selected noise can be reduced using DDS. Additionally, both rolling shutter and global shutter modes can be selected when HD resolution mode is selected.

Abstract: An image sensor is provided. In one aspect, the image sensor includes a pixel coupled to an output line. The pixel includes a photodiode configured to generate electrical charges in response to light and a supply circuit configured to supply a voltage to the photodiode to keep a voltage of the photodiode at or above a threshold level in an integration time. In another aspect, the pixel includes a supply circuit configured to selectively supply voltage to the photodiode in a first charge holding capacity and a second charge holding capacity.

Abstract: An image sensor is provided. In one aspect, the image sensor includes a pixel coupled to an output line. The pixel includes a photodiode configured to generate electrical charges in response to light and a supply circuit configured to supply a voltage to the photodiode to keep a voltage of the photodiode at or above a threshold level in an integration time. In another aspect, the pixel includes a supply circuit configured to selectively supply voltage to the photodiode in a first charge holding capacity and a second charge holding capacity.

Abstract: An improved solution for generating depth maps using time-of-flight measurements is described, more specifically a time-of-flight imager and a time-of-flight imaging method with an improved accuracy. A depth correction profile is applied to the measured depth maps, which takes into account propagation delays within an array of pixels of a sensor of the time-of-flight imager.

Abstract: An image sensor and a method for operating an image sensor are provided. In one aspect, the image sensor includes a pixel with multilevel transfer gate. The image sensor includes a pixel coupled to an output line. The pixel includes a photodiode configured to generate electrical charges in response to light. The pixel also includes a capacitive element for storing electrical charges for providing a value to the output line. A transfer gate is coupled between the photodiode and the capacitive element. The transfer gate is configured to activate to transfer the electrical charges between the photodiode and the capacitive element. The image sensor is configured to provide at least one control signal operating in a plurality of voltages to the transfer gate. The plurality of voltages is in addition to a voltage which deactivates the transfer gate.

Abstract: An image sensor is provided. In one aspect, the image sensor includes a pixel coupled to an output line. The pixel includes a photodiode configured to generate electrical charges in response to light and a supply circuit configured to supply a voltage to the photodiode to keep a voltage of the photodiode at or above a threshold level in an integration time. In another aspect, the pixel includes a supply circuit configured to selectively supply voltage to the photodiode in a first charge holding capacity and a second charge holding capacity.

Abstract: In accordance with an exemplary embodiment of the present invention, a method is provided to form an image using an active pixel sensor imager (108). The method includes placing an active pixel sensor (202) in electrical contact with a column readout line (204), lacing a sample-and-hold capacitor into electrical contact with the column readout line, and placing the sample-and-hold capacitor (314 or 320) in electrical contact with an input capacitor (324 or 334) on an amplifier (222). All of the input capacitor (324 or 334), the sample-and-hold capacitor (314 or 320), and the active pixel sensor (202) are in electrical contact for an overlapping period of time. A differential output (228) from the amplifier (222) is digitized, and used to form an image.