Abstract: MRAM element having a magnetic tunnel junction including a reference layer, a storage layer, a tunnel barrier layer between the reference and storage layers, and a storage antiferromagnetic layer. The storage antiferromagnetic layer has a first function of exchange-coupling a storage magnetization of the storage layer and a second function of heating the magnetic tunnel junction when a heating current in passed in the magnetic tunnel junction. The MRAM element has better data retention and low writing temperature.

Abstract: MRAM element having a magnetic tunnel junction including a reference layer, a storage layer, a tunnel barrier layer between the reference and storage layers, and a storage antiferromagnetic layer. The storage antiferromagnetic layer has a first function of exchange-coupling a storage magnetization of the storage layer and a second function of heating the magnetic tunnel junction when a heating current in passed in the magnetic tunnel junction. The MRAM element has better data retention and low writing temperature.

Abstract: A thermally assisted magnetic writing device including a first magnetic layer known as the “reference layer,” a second magnetic layer known as the “storage layer” that presents a variable magnetization direction, a spacer situated between the reference layer and the storage layer and a first antiferromagnetic layer in contact with the storage layer, the first antiferromagnetic layer being able to trap the magnetization direction of the storage layer. The magnetic device also includes a stabilization layer made of a ferromagnetic material, the stabilization layer being in contact with the first antiferromagnetic layer.

Abstract: A magnetic device includes a magnetic layer having a variable direction of magnetization, and a first antiferromagnetic layer in contact with the magnetic layer, the first antiferromagnetic layer being able to trap the direction of magnetization of the magnetic layer. The magnetic device also includes a layer made of a ferromagnetic material in contact with the first antiferromagnetic layer through its face opposite to the magnetic layer, the directions of magnetization of the magnetic and ferromagnetic layers being substantially perpendicular. A first layer among the magnetic and ferromagnetic layers has a magnetization, the direction of which is oriented in the plane of the first layer whereas the second of the two layers among the magnetic and ferromagnetic layers has a magnetization, the direction of which is oriented outside of the plane of the second layer.

Abstract: A thermally assisted magnetic writing device including a first magnetic layer known as the “reference layer,” a second magnetic layer known as the “storage layer” that presents a variable magnetization direction, a spacer situated between the reference layer and the storage layer and a first antiferromagnetic layer in contact with the storage layer, the first antiferromagnetic layer being able to trap the magnetization direction of the storage layer. The magnetic device also includes a stabilization layer made of a ferromagnetic material, the stabilization layer being in contact with the first antiferromagnetic layer.

Abstract: The present invention relates to a magnetic recording medium (100). The invention finds a particularly interesting application in the field of data stored on hard disks. The medium (100) comprises an assembly of magnetic zones disposed on a substrate (102), each magnetic zone comprising at least one first (C?1) and one second (C?2) stacked magnetic layers separated from each other by a non-magnetic layer (NM?). In addition, said first magnetic layer (C?1) presents magnetization substantially oriented parallel to the plane of said substrate (102) and said second magnetic layer (C?2) presents magnetization substantially oriented perpendicular to the plane of said substrate (102).

Abstract: A magnetic device includes a magnetic layer having a variable direction of magnetisation, and a first antiferromagnetic layer in contact with the magnetic layer, the first antiferromagnetic layer being able to trap the direction of magnetisation of the magnetic layer. The magnetic device also includes a layer made of a ferromagnetic material in contact with the first antiferromagnetic layer through its face opposite to the magnetic layer, the directions of magnetisation of the magnetic and ferromagnetic layers being substantially perpendicular. A first layer among the magnetic and ferromagnetic layers has a magnetisation, the direction of which is oriented in the plane of the first layer whereas the second of the two layers among the magnetic and ferromagnetic layers has a magnetisation, the direction of which is oriented outside of the plane of the second layer.

Abstract: This magnetic multilayer device comprises, on a substrate, an alternating sequence of magnetic metallic layers M and oxide, hydride or nitride layers O. The number of layers M equals at least two. The layers M are continuous. There is interfacial magnetic anisotropy perpendicular to the plane of the layers at the level of the M/O interfaces.

Abstract: The present invention relates to a magnetic recording medium (100). The invention finds a particularly interesting application in the field of data stored on hard disks. The medium (100) comprises an assembly of magnetic zones disposed on a substrate (102), each magnetic zone comprising at least one first (C?1) and one second (C?2) stacked magnetic layers separated from each other by a non-magnetic layer (NM?). In addition, said first magnetic layer (C?1) presents magnetization substantially oriented parallel to the plane of said substrate (102) and said second magnetic layer (C?2) presents magnetization substantially oriented perpendicular to the plane of said substrate (102).

Abstract: This magnetic multilayer device comprises, on a substrate, an alternating sequence of magnetic metallic layers M and oxide, hydride or nitride layers O. The number of layers M equals at least two. The layers M are continuous. There is interfacial magnetic anisotropy perpendicular to the plane of the layers at the level of the M/O interfaces.