Abstract: Single package, electrically isolated dual, triple, quad, etc., power semiconductor devices are provided without use of ceramic or other isolators between the semiconductor die and the die support. For example, isolated dual power transistors, each having three leads, are encapsulated within the same package outline and lead footprint as a seven lead TO-218 or TO-220 by dividing the die flag into two spaced-apart portions, one for each die, connecting the first three leads to the first transistor and die flag, connecting the last three leads to the second transistor and die flag, and omitting the centrally located fourth lead. The spaced-apart die flags and leads are supported by a molded encapsulation.

Abstract: An improved power semiconductor device and manufacturing method are described wherein the external, thermally conducting, heat transfer face of the device is electrically insulated by a glassy dielectric which is intimately bonded directly to the conductive heat spreader supporting the semiconductor die. By forming the exposed corners of the heat spreader to be substantially smooth curved surfaces having a predetermined minimum radius of curvature greater than the thickness of the glassy dielectric, formation of a ridge of glass at the corners and edges of the heat spreader is avoided. For ease of assembly the piece parts are initially substantially flat and parallel. A molding compound of controlled shrinkage is used to avoid distorting the substantially flat smooth insulated heat transfer face which remains exposed in the encapsulated device.

Abstract: An improved power semiconductor device and manufacturing method are described wherein the external, thermally conducting, heat transfer face of the device is electrically insulated by a glassy dielectric which is intimately bonded directly to the conductive heat spreader supporting the semiconductor die. By forming the exposed corners of the heat spreader to be substantially smooth curved surfaces having a predetermined minimum radius of curvature greater than the thickness of the glassy dielectric, formation of a ridge of glass at the corners and edges of the heat spreader is avoided. For ease of assembly the piece parts are initially substantially flat and parallel. A molding compound of controlled shrinkage is used to avoid distorting the substantially flat smooth insulated heat transfer face which remains exposed in the encapsulated device.