Abstract: An integrated high-performance decoupling capacitor, formed on a semiconductor chip, using the substrate of the chip itself in conjunction with a metallic deposit formed on the presently unused chip back surface and electrically connected to the active chip circuit to result in a significant and very effective decoupling capacitor in close proximity to the active circuit on the chip requiring such decoupling capacitance.Specifically the present invention achieves this desirable result by providing a dielectric layer on the unused backside of the chip and forming a metal deposit on the formed backside dielectric layer and an electrical connection, between the metallic deposit and the active chip circuit via a through hole in the chip.