Patents by Inventor Jerzy P. Puchacz
Jerzy P. Puchacz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11793103Abstract: Methods and apparatuses to activate, modify, and sanitize the surfaces of granular, powdered, or seed material placed in a continuous flow of a low-temperature, reduced-pressure gas plasma. Said plasma may be created with radio-frequency power, using capacitive-inductive, or a combination of both types of discharge. The plasma is generated at pressures in the 0.01 to 10 Torr range. RF frequency ranges from 0.2 to 220 MHz, and correspond to a plasma density between about ne×108-ne×1012 or 0.001 to 0.4 W/cm3. Inserts and electrodes may be temperature controlled to control process conditions. RF discharge may be pulsed or modulated by different frequency in order to stimulate energy exchange between gas plasma and process material. The apparatuses may be grounded, biased and mechanically activated (e.g., vibration, rotation, etc.).Type: GrantFiled: September 16, 2019Date of Patent: October 24, 2023Assignee: APPLIED QUANTUM ENERGIES, LLCInventors: Benjamin Wolfe, George Paskalov, Rick Jarvis, Jerzy P. Puchacz
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Patent number: 11337375Abstract: Methods and apparatuses to activate, modify, and sanitize the surfaces of granular, powdered, or seed material placed in a continuous flow of a low-temperature, reduced-pressure gas plasma. Said plasma may be created with radio-frequency power, using capacitive-inductive, or a combination of both types of discharge. The plasma is generated at pressures in the 0.01 to 10 Torr range. RF frequency ranges from 0.2 to 220 MHz, and correspond to a plasma density between about ne×108?ne×1012 or 0.001 to 0.4 W/cm3. Inserts and electrodes may be temperature controlled to control process conditions. RF discharge may be pulsed or modulated by different frequency in order to stimulate energy exchange between gas plasma and process material. The apparatuses may be grounded, biased and mechanically activated (e.g., vibration, rotation, etc.).Type: GrantFiled: January 23, 2020Date of Patent: May 24, 2022Assignee: APPLIED QUANTUM ENERGIES, LLCInventors: Benjamin Wolfe, George Paskalov, Rick Jarvis, Jerzy P. Puchacz
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Publication number: 20200154643Abstract: Methods and apparatuses to activate, modify, and sanitize the surfaces of granular, powdered, or seed material placed in a continuous flow of a low-temperature, reduced-pressure gas plasma. Said plasma may be created with radio-frequency power, using capacitive-inductive, or a combination of both types of discharge. The plasma is generated at pressures in the 0.01 to 10 Torr range. RF frequency ranges from 0.2 to 220 MHz, and correspond to a plasma density between about ne×108?ne×1012 or 0.001 to 0.4 W/cm3. Inserts and electrodes may be temperature controlled to control process conditions. RF discharge may be pulsed or modulated by different frequency in order to stimulate energy exchange between gas plasma and process material. The apparatuses may be grounded, biased and mechanically activated (e.g., vibration, rotation, etc.).Type: ApplicationFiled: January 23, 2020Publication date: May 21, 2020Inventors: Benjamin WOLFE, George PASKALOV, Rick JARVIS, Jerzy P. PUCHACZ
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Patent number: 10582667Abstract: Methods and apparatuses to activate, modify, and sanitize the surfaces of granular, powdered, or seed material placed in a continuous flow of a low-temperature, reduced-pressure gas plasma. Said plasma may be created with radio-frequency power, using capacitive-inductive, or a combination of both types of discharge. The plasma is generated at pressures in the 0.01 to 10 Torr range. RF frequency ranges from 0.2 to 220 MHz, and correspond to a plasma density between about ne×108-ne×1012 or 0.001 to 0.4 W/cm3. Inserts and electrodes may be temperature controlled to control process conditions. RF discharge may be pulsed or modulated by different frequency in order to stimulate energy exchange between gas plasma and process material. The apparatuses may be grounded, biased and mechanically activated (e.g., vibration, rotation, etc.).Type: GrantFiled: October 10, 2016Date of Patent: March 10, 2020Assignee: Applied Quantum Energies, LLCInventors: Benjamin Wolfe, George Paskalov, Rick Jarvis, Jerzy P. Puchacz
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Publication number: 20200015344Abstract: Methods and apparatuses to activate, modify, and sanitize the surfaces of granular, powdered, or seed material placed in a continuous flow of a low-temperature, reduced-pressure gas plasma. Said plasma may be created with radio-frequency power, using capacitive-inductive, or a combination of both types of discharge. The plasma is generated at pressures in the 0.01 to 10 Torr range. RF frequency ranges from 0.2 to 220 MHz, and correspond to a plasma density between about ne×108-ne×1012 or 0.001 to 0.4 W/cm3. Inserts and electrodes may be temperature controlled to control process conditions. RF discharge may be pulsed or modulated by different frequency in order to stimulate energy exchange between gas plasma and process material. The apparatuses may be grounded, biased and mechanically activated (e.g., vibration, rotation, etc.).Type: ApplicationFiled: September 16, 2019Publication date: January 9, 2020Inventors: Benjamin WOLFE, George PASKALOV, Rick JARVIS, Jerzy P. PUCHACZ
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Patent number: 10420199Abstract: Methods and apparatuses to activate, modify, and sanitize the surfaces of granular, powdered, or seed material placed in a continuous flow of a low-temperature, reduced-pressure gas plasma. Said plasma may be created with radio-frequency power, using capacitive-inductive, or a combination of both types of discharge. The plasma is generated at pressures in the 0.01 to 10 Torr range. RF frequency ranges from 0.2 to 220 MHz, and correspond to a plasma density between about ne×108?ne×1012 or 0.001 to 0.4 W/cm3. Inserts and electrodes may be temperature controlled to control process conditions. RF discharge may be pulsed or modulated by different frequency in order to stimulate energy exchange between gas plasma and process material. The apparatuses may be grounded, biased and mechanically activated (e.g., vibration, rotation, etc.).Type: GrantFiled: February 9, 2016Date of Patent: September 17, 2019Assignee: Applied Quantum Energies, LLCInventors: Benjamin Wolfe, George Paskalov, Rick Jarvis, Jerzy P. Puchacz
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Publication number: 20170099782Abstract: Methods and apparatuses to activate, modify, and sanitize the surfaces of granular, powdered, or seed material placed in a continuous flow of a low-temperature, reduced-pressure gas plasma. Said plasma may be created with radio-frequency power, using capacitive-inductive, or a combination of both types of discharge. The plasma is generated at pressures in the 0.01 to 10 Torr range. RF frequency ranges from 0.2 to 220 MHz, and correspond to a plasma density between about ne×108-ne×1012 or 0.001 to 0.4 W/cm3. Inserts and electrodes may be temperature controlled to control process conditions. RF discharge may be pulsed or modulated by different frequency in order to stimulate energy exchange between gas plasma and process material. The apparatuses may be grounded, biased and mechanically activated (e.g., vibration, rotation, etc.).Type: ApplicationFiled: October 10, 2016Publication date: April 13, 2017Inventors: Benjamin WOLFE, George PASKALOV, Rick JARVIS, Jerzy P. PUCHACZ
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Publication number: 20160227699Abstract: Methods and apparatuses to activate, modify, and sanitize the surfaces of granular, powdered, or seed material placed in a continuous flow of a low-temperature, reduced-pressure gas plasma. Said plasma may be created with radio-frequency power, using capacitive-inductive, or a combination of both types of discharge. The plasma is generated at pressures in the 0.01 to 10 Torr range. RF frequency ranges from 0.2 to 220 MHz, and correspond to a plasma density between about ne×108?ne×1012 or 0.001 to 0.4 W/cm3. Inserts and electrodes may be temperature controlled to control process conditions. RF discharge may be pulsed or modulated by different frequency in order to stimulate energy exchange between gas plasma and process material. The apparatuses may be grounded, biased and mechanically activated (e.g., vibration, rotation, etc.).Type: ApplicationFiled: February 9, 2016Publication date: August 11, 2016Inventors: Benjamin WOLFE, George PASKALOV, Rick JARVIS, Jerzy P. PUCHACZ
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Patent number: 4857160Abstract: A novel method and machine are provided for processing workpieces at one or more work-stations under vacuum conditions. The machine comprises means for receiving at atmospheric pressure an object to be processed, an inlet lock that is connected to a vacuum manifold, at least one processing station that is at a pressure at least as low as 10.sup.-1 to 10.sup.-6 mm. Hg., means for conveying work-pieces to be processed into and through the input lock to said at least one processing station so that the pressure within the processing chamber is not adversely affected by introduction of workpieces thereto via the input lock, an output lock, and means for transferring workpieces from said at least one processing station into the output lock so that the pressure in said at least one processing station is not adversely affected by such transfer.Type: GrantFiled: July 25, 1988Date of Patent: August 15, 1989Assignee: Oerlikon-Buhrle U.S.A. Inc.Inventors: Richard F. Landau, William E. Millikin Jr., Jerzy P. Puchacz, Manolito Q. Reyes, Walter Schadler