Patents by Inventor Jerzy Ruzyllo
Jerzy Ruzyllo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8222061Abstract: An example quantum dot (QD) device comprises a QD layer on a substrate, and may be fabricated by aerosol deposition, for example by mist deposition. An example approach includes providing a liquid precursor including QDs dispersed in a liquid carrier, generating a mist of droplets of the liquid precursor, directing the droplets towards the substrate so as to form a liquid precursor film on the substrate, and removing the liquid carrier from the liquid precursor film to form the quantum dot layer on the substrate. Example devices include multi-color QD-LED (light emitting diode) displays, and other devices.Type: GrantFiled: March 28, 2008Date of Patent: July 17, 2012Assignee: The Penn State Research FoundationInventors: Jian Xu, Jerzy Ruzyllo, Karthikeyan Shanmugasundaram, Ting Zhu, Fan Zhang
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Publication number: 20080238294Abstract: An example quantum dot (QD) device comprises a QD layer on a substrate, and may be fabricated by aerosol deposition, for example by mist deposition. An example approach includes providing a liquid precursor including QDs dispersed in a liquid carrier, generating a mist of droplets of the liquid precursor, directing the droplets towards the substrate so as to form a liquid precursor film on the substrate, and removing the liquid carrier from the liquid precursor film to form the quantum dot layer on the substrate. Example devices include multi-color QD-LED (light emitting diode) displays, and other devices.Type: ApplicationFiled: March 28, 2008Publication date: October 2, 2008Applicant: The Penn State Research FoundationInventors: Jian Xu, Jerzy Ruzyllo, Karthikeyan Shanmugasundaram, Ting Zhu, Fan Zhang
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Patent number: 6967490Abstract: An apparatus and method for the real-time, in-line testing of semiconductor wafers during the manufacturing process. In one embodiment the apparatus includes a probe assembly within a semiconductor wafer processing line. As each wafer passes adjacent the probe assembly, a source of modulated light, within the probe assembly, having a predetermined wavelength and frequency of modulation, impinges upon the wafer. A sensor in the probe assembly measures the surface photovoltage induced by the modulated light. A computer then uses the induced surface photovoltage to determine various electrical characteristics of the wafer.Type: GrantFiled: March 28, 2003Date of Patent: November 22, 2005Assignee: QC Solutions, Inc.Inventors: Emil Kamieniecki, Jerzy Ruzyllo
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Patent number: 6924657Abstract: An apparatus and method for the real-time, in-line testing of semiconductor wafers during the manufacturing process. In one embodiment the apparatus includes a probe assembly within a semiconductor wafer processing line. As each wafer passes adjacent the probe assembly, a source of modulated light, within the probe assembly, having a predetermined wavelength and frequency of modulation, impinges upon the wafer. A sensor in the probe assembly measures the surface photovoltage induced by the modulated light. A computer then uses the induced surface photovoltage to determine various electrical characteristics of the wafer.Type: GrantFiled: March 28, 2003Date of Patent: August 2, 2005Assignee: QC Solutions, Inc.Inventors: Emil Kamieniecki, Jerzy Ruzyllo
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Patent number: 6909302Abstract: An apparatus and method for the real-time, in-line testing of semiconductor wafers during the manufacturing process. In one embodiment the apparatus includes a probe assembly within a semiconductor wafer processing line. As each wafer passes adjacent the probe assembly, a source of modulated light, within the probe assembly, having a predetermined wavelength and frequency of modulation, impinges upon the wafer. A sensor in the probe assembly measures the surface photovoltage induced by the modulated light. A computer then uses the induced surface photovoltage to determine various electrical characteristics of the wafer.Type: GrantFiled: August 17, 2001Date of Patent: June 21, 2005Assignee: QC Solutions, Inc.Inventors: Emil Kamieniecki, Jerzy Ruzyllo
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Publication number: 20040046585Abstract: An apparatus and method for the real-time, in-line testing of semiconductor wafers during the manufacturing process. In one embodiment the apparatus includes a probe assembly within a semiconductor wafer processing line. As each wafer passes adjacent the probe assembly, a source of modulated light, within the probe assembly, having a predetermined wavelength and frequency of modulation, impinges upon the wafer. A sensor in the probe assembly measures the surface photovoltage induced by the modulated light. A computer then uses the induced surface photovoltage to determine various electrical characteristics of the wafer.Type: ApplicationFiled: March 28, 2003Publication date: March 11, 2004Applicant: QC Solutions, Inc.Inventors: Emil Kamieniecki, Jerzy Ruzyllo
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Publication number: 20020006740Abstract: An apparatus and method for the real-time, in-line testing of semiconductor wafers during the manufacturing process. In one embodiment the apparatus includes a probe assembly within a semiconductor wafer processing line. As each wafer passes adjacent the probe assembly, a source of modulated light, within the probe assembly, having a predetermined wavelength and frequency of modulation, impinges upon the wafer. A sensor in the probe assembly measures the surface photovoltage induced by the modulated light. A computer then uses the induced surface photovoltage to determine various electrical characteristics of the wafer.Type: ApplicationFiled: August 17, 2001Publication date: January 17, 2002Inventors: Emil Kamieniecki, Jerzy Ruzyllo
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Patent number: 6315574Abstract: An apparatus and method for the real-time, in-line testing of semiconductor wafers during the manufacturing process. In one embodiment the apparatus includes a probe assembly within a semiconductor wafer processing line. As each wafer passes adjacent the probe assembly, a source of modulated light, within the probe assembly, having a predetermined wavelength and frequency of modulation, impinges upon the wafer. A sensor in the probe assembly measures the surface photovoltage induced by the modulated light. A computer then uses the induced surface photovoltage to determine various electrical characteristics of the wafer.Type: GrantFiled: January 20, 2000Date of Patent: November 13, 2001Assignee: QC Solutions, Inc.Inventors: Emil Kamieniecki, Jerzy Ruzyllo
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Patent number: 6069017Abstract: An apparatus and method for the real-time, in-line testing of semiconductor wafers during the manufacturing process. In one embodiment the apparatus includes a probe assembly within a semiconductor wafer processing line. As each wafer passes adjacent the probe assembly, a source of modulated light, within the probe assembly, having a predetermined wavelength and frequency of modulation, impinges upon the wafer. A sensor in the probe assembly measures the surface photovoltage induced by the modulated light. A computer then uses the induced surface photovoltage to determine various electrical characteristics of the wafer.Type: GrantFiled: May 8, 1997Date of Patent: May 30, 2000Assignee: QC Solutions, Inc.Inventors: Emil Kamieniecki, Jerzy Ruzyllo
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Patent number: 5661408Abstract: An apparatus and method for the real-time, in-line testing of semiconductor wafers during the manufacturing process. In one embodiment the apparatus includes a probe assembly within a semiconductor wafer processing line. As each wafer passes adjacent the probe assembly, a source of modulated light, within the probe assembly, having a predetermined wavelength and frequency of modulation, impinges upon the wafer. A sensor in the probe assembly measures the surface photovoltage induced by the modulated light. A computer then uses the induced surface photovoltage to determine various electrical characteristics of the wafer.Type: GrantFiled: March 1, 1995Date of Patent: August 26, 1997Assignee: QC Solutions, Inc.Inventors: Emil Kamieniecki, Jerzy Ruzyllo
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Patent number: 5439553Abstract: Oxides are etched with a halide-containing species and a low molecular weight organic molecule having a high vapor pressure at standard conditions, where etching is performed at preset wafer temperature in an enclosed chamber at a pressure such that all species present in the chamber, including water, are in the gas phase and condensation of species present on the etched surface is controlled. Thus all species involved remain in the gas phase even if trace water vapor appears in the process chamber. Preferably, etching is performed in a cluster dry tool apparatus.Type: GrantFiled: March 30, 1994Date of Patent: August 8, 1995Assignee: Penn State Research FoundationInventors: Robert W. Grant, Jerzy Ruzyllo, Kevin Torek
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Patent number: 5234540Abstract: A process for etching oxide films on the semiconductor, or other substrates, in a sealed photochemical reactor. Anhydrous hydrogen fluoride (AHF) gas, or other halogen containing gases, and alcohol vapor carried by an inert gas, such as nitrogen, are passed over the oxides to be etched. The UV radiation shines through a window, which passes the UV radiation onto the oxides while the gases are flowing, and enhances and controls etching of the oxides. The UV window is impervious to the etch process gases. The etch rates are modified, providing for improved oxide etching characteristics.Type: GrantFiled: April 30, 1992Date of Patent: August 10, 1993Assignee: SubMicron Systems, Inc.Inventors: Robert W. Grant, Kevin Torek, Richard E. Novak, Jerzy Ruzyllo
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Patent number: RE38760Abstract: Oxides are etched with a halide-containing species and a low molecular weight organic molecule having a high vapor pressure at standard conditions, where etching is performed at preset wafer temperature in an enclosed chamber at a pressure such that all species present in the chamber, including water, are in the gas phase and condensation of species present on the etched surface is controlled. Thus all species involved remain in the gas phase even if trace water vapor appears in the process chamber. Preferably, etching is performed in a cluster dry tool apparatus.Type: GrantFiled: July 30, 1997Date of Patent: July 19, 2005Assignee: Penn State Research FoundationInventors: Robert W. Grant, Jerzy Ruzyllo, Kevin Torek