Patents by Inventor Jessica P. STRISS
Jessica P. STRISS has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10957588Abstract: Chamferless via structures and methods of manufacture are provided. The method includes: forming at least one self-aligned via within at least dielectric material; plugging the at least one self-aligned via with material; forming a protective sacrificial mask over the material which plugs the at least one self-aligned via, after a recessing process; forming at least one trench within the dielectric material, with the protective sacrificial mask protecting the material during the trench formation; removing the protective sacrificial mask and the material within the at least one self-aligned via to form a wiring via; and filling the wiring via and the at least one trench with conductive material.Type: GrantFiled: October 25, 2016Date of Patent: March 23, 2021Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, GLOBALFOUNDRIES INC.Inventors: Mark L. Lenhardt, Frank W. Mont, Brown C. Peethala, Shariq Siddiqui, Jessica P. Striss, Douglas M. Trickett
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Patent number: 10937694Abstract: Chamferless via structures and methods of manufacture are provided. The method includes: forming at least one non-self-aligned via within at least dielectric material; plugging the at least one non-self-aligned via with material; forming a protective sacrificial mask over the material which plugs the at least one non-self-aligned via, after a recessing process; forming at least one trench within the dielectric material, with the protective sacrificial mask protecting the material during the trench formation; removing the protective sacrificial mask and the material within the at least one non-self-aligned via to form a wiring via; and filling the wiring via and the at least one trench with conductive material.Type: GrantFiled: July 5, 2019Date of Patent: March 2, 2021Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, GLOBALFOUNDRIES INC.Inventors: Mark L. Lenhardt, Frank W. Mont, Brown C. Peethala, Shariq Siddiqui, Jessica P. Striss, Douglas M. Trickett
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Patent number: 10903118Abstract: Chamferless via structures and methods of manufacture are provided. The method includes: forming at least one non-self-aligned via within at least dielectric material; plugging the at least one non-self-aligned via with material; forming a protective sacrificial mask over the material which plugs the at least one non-self-aligned via, after a recessing process; forming at least one trench within the dielectric material, with the protective sacrificial mask protecting the material during the trench formation; removing the protective sacrificial mask and the material within the at least one non-self-aligned via to form a wiring via; and filling the wiring via and the at least one trench with conductive material.Type: GrantFiled: July 5, 2019Date of Patent: January 26, 2021Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, GLOBALFOUNDRIES INC.Inventors: Mark L. Lenhardt, Frank W. Mont, Brown C. Peethala, Shariq Siddiqui, Jessica P. Striss, Douglas M. Trickett
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Publication number: 20190333814Abstract: Chamferless via structures and methods of manufacture are provided. The method includes: forming at least one non-self-aligned via within at least dielectric material; plugging the at least one non-self-aligned via with material; forming a protective sacrificial mask over the material which plugs the at least one non-self-aligned via, after a recessing process; forming at least one trench within the dielectric material, with the protective sacrificial mask protecting the material during the trench formation; removing the protective sacrificial mask and the material within the at least one non-self-aligned via to form a wiring via; and filling the wiring via and the at least one trench with conductive material.Type: ApplicationFiled: July 5, 2019Publication date: October 31, 2019Applicant: GLOBALFOUNDRIES INC.Inventors: Mark L. LENHARDT, Frank W. MONT, Brown C. PEETHALA, Shariq SIDDIQUI, Jessica P. STRISS, Douglas M. TRICKETT
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Publication number: 20190333813Abstract: Chamferless via structures and methods of manufacture are provided. The method includes: forming at least one non-self-aligned via within at least dielectric material; plugging the at least one non-self-aligned via with material; forming a protective sacrificial mask over the material which plugs the at least one non-self-aligned via, after a recessing process; forming at least one trench within the dielectric material, with the protective sacrificial mask protecting the material during the trench formation; removing the protective sacrificial mask and the material within the at least one non-self-aligned via to form a wiring via; and filling the wiring via and the at least one trench with conductive material.Type: ApplicationFiled: July 5, 2019Publication date: October 31, 2019Applicant: GLOBALFOUNDRIES INC.Inventors: Mark L. LENHARDT, Frank W. MONT, Brown C. PEETHALA, Shariq SIDDIQUI, Jessica P. STRISS, Douglas M. TRICKETT
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Patent number: 10388565Abstract: Chamferless via structures and methods of manufacture are provided. The method includes: forming at least one non-self-aligned via within at least dielectric material; plugging the at least one non-self-aligned via with material; forming a protective sacrificial mask over the material which plugs the at least one non-self-aligned via, after a recessing process; forming at least one trench within the dielectric material, with the protective sacrificial mask protecting the material during the trench formation; removing the protective sacrificial mask and the material within the at least one non-self-aligned via to form a wiring via; and filling the wiring via and the at least one trench with conductive material.Type: GrantFiled: May 17, 2018Date of Patent: August 20, 2019Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, GLOBALFOUNDRIES INC.Inventors: Mark L. Lenhardt, Frank W. Mont, Brown C. Peethala, Shariq Siddiqui, Jessica P. Striss, Douglas M. Trickett
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Publication number: 20180269103Abstract: Chamferless via structures and methods of manufacture are provided. The method includes: forming at least one non-self-aligned via within at least dielectric material; plugging the at least one non-self-aligned via with material; forming a protective sacrificial mask over the material which plugs the at least one non-self-aligned via, after a recessing process; forming at least one trench within the dielectric material, with the protective sacrificial mask protecting the material during the trench formation; removing the protective sacrificial mask and the material within the at least one non-self-aligned via to form a wiring via; and filling the wiring via and the at least one trench with conductive material.Type: ApplicationFiled: May 17, 2018Publication date: September 20, 2018Applicant: GLOBALFOUNDRIES INC.Inventors: Mark L. LENHARDT, Frank W. MONT, Brown C. PEETHALA, Shariq SIDDIQUI, Jessica P. STRISS, Douglas M. TRICKETT
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Patent number: 10032668Abstract: Chamferless via structures and methods of manufacture are provided. The method includes: forming at least one self-aligned via within at least dielectric material; plugging the at least one self-aligned via with material; forming a protective sacrificial mask over the material which plugs the at least one self-aligned via, after a recessing process; forming at least one trench within the dielectric material, with the protective sacrificial mask protecting the material during the trench formation; removing the protective sacrificial mask and the material within the at least one self-aligned via to form a wiring via; and filling the wiring via and the at least one trench with conductive material.Type: GrantFiled: January 23, 2017Date of Patent: July 24, 2018Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, GLOBALFOUNDRIES INC.Inventors: Mark L. Lenhardt, Frank W. Mont, Brown C. Peethala, Shariq Siddiqui, Jessica P. Striss, Douglas M. Trickett
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Publication number: 20170133268Abstract: Chamferless via structures and methods of manufacture are provided. The method includes: forming at least one self-aligned via within at least dielectric material; plugging the at least one self-aligned via with material; forming a protective sacrificial mask over the material which plugs the at least one self-aligned via, after a recessing process; forming at least one trench within the dielectric material, with the protective sacrificial mask protecting the material during the trench formation; removing the protective sacrificial mask and the material within the at least one self-aligned via to form a wiring via; and filling the wiring via and the at least one trench with conductive material.Type: ApplicationFiled: January 23, 2017Publication date: May 11, 2017Applicant: GLOBALFOUNDRIES INC.Inventors: Mark L. LENHARDT, Frank W. MONT, Brown C. PEETHALA, Shariq SIDDIQUI, Jessica P. STRISS, Douglas M. TRICKETT
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Patent number: 9613862Abstract: Chamferless via structures and methods of manufacture are provided. The method includes: forming at least one self-aligned via within at least dielectric material; plugging the at least one self-aligned via with material; forming a protective sacrificial mask over the material which plugs the at least one self-aligned via, after a recessing process; forming at least one trench within the dielectric material, with the protective sacrificial mask protecting the material during the trench formation; removing the protective sacrificial mask and the material within the at least one self-aligned via to form a wiring via; and filling the wiring via and the at least one trench with conductive material.Type: GrantFiled: September 2, 2015Date of Patent: April 4, 2017Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, GLOBALFOUNDRIES INC.Inventors: Mark L. Lenhardt, Frank W. Mont, Brown C. Peethala, Shariq Siddiqui, Jessica P. Striss, Douglas M. Trickett
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Publication number: 20170062331Abstract: Chamferless via structures and methods of manufacture are provided. The method includes: forming at least one self-aligned via within at least dielectric material; plugging the at least one self-aligned via with material; forming a protective sacrificial mask over the material which plugs the at least one self-aligned via, after a recessing process; forming at least one trench within the dielectric material, with the protective sacrificial mask protecting the material during the trench formation; removing the protective sacrificial mask and the material within the at least one self-aligned via to form a wiring via; and filling the wiring via and the at least one trench with conductive material.Type: ApplicationFiled: October 25, 2016Publication date: March 2, 2017Inventors: Mark L. LENHARDT, Frank W. MONT, Brown C. PEETHALA, Shariq SIDDIQUI, Jessica P. STRISS, Douglas M. TRICKETT
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Publication number: 20170062275Abstract: Chamferless via structures and methods of manufacture are provided. The method includes: forming at least one self-aligned via within at least dielectric material; plugging the at least one self-aligned via with material; forming a protective sacrificial mask over the material which plugs the at least one self-aligned via, after a recessing process; forming at least one trench within the dielectric material, with the protective sacrificial mask protecting the material during the trench formation; removing the protective sacrificial mask and the material within the at least one self-aligned via to form a wiring via; and filling the wiring via and the at least one trench with conductive material.Type: ApplicationFiled: September 2, 2015Publication date: March 2, 2017Inventors: Mark L. LENHARDT, Frank W. MONT, Brown C. PEETHALA, Shariq SIDDIQUI, Jessica P. STRISS, Douglas M. TRICKETT
