Abstract: Container includes a base portion having a bottom panel defining a compartment. A front base panel extends upwardly from the bottom panel. A back panel extends from the bottom panel. First and second base side tabs extend between the bottom panel, front base panel, and back panel to define opposing sides. A lid portion is moveable between open and dispensing positions. The lid portion includes a top panel hindgedly-coupled to the back panel, and a front lid panel extending from the top panel having a front lid panel pressure edge. The front lid panel in the dispensing position extends within the compartment along the front base panel to pinch a web material from the compartment between the front lid panel pressure edge and the bottom panel. The web material is dispensed between the front lid panel and the front base panel when the lid is in the dispensing position.

Abstract: Methods are disclosed to process a thermal interface material to achieve easy pick and placement of the thermal interface material without lowering thermal performance of a completed semiconductor package. One method involves applying a non-adhesive layer on one or more surfaces of the thermal interface material, interfacing the thermal interface material with one or more components to interface the non-adhesive layer therebetween, and applying heat to alter the non-adhesive layer to increase thermal contact between the thermal interface material and the interfacing component(s).

Abstract: Methods are disclosed to process a thermal interface material to achieve easy pick and placement of the thermal interface material without lowering thermal performance of a completed semiconductor package. One method involves applying a non-adhesive layer on one or more surfaces of the thermal interface material, interfacing the thermal interface material with one or more components to interface the non-adhesive layer therebetween, and applying heat to alter the non-adhesive layer to increase thermal contact between the thermal interface material and the interfacing component(s).

Abstract: Methods are disclosed to process a thermal interface material to achieve easy pick and placement of the thermal interface material without lowering thermal performance of a completed semiconductor package. One method involves applying a non-adhesive layer on one or more surfaces of the thermal interface material, interfacing the thermal interface material with one or more components to interface the non-adhesive layer therebetween, and applying heat to alter the non-adhesive layer to increase thermal contact between the thermal interface material and the interfacing component(s).

Abstract: Methods are disclosed to process a thermal interface material to achieve easy pick and placement of the thermal interface material without lowering thermal performance of a completed semiconductor package. One method involves applying a non-adhesive layer on one or more surfaces of the thermal interface material, interfacing the thermal interface material with one or more components to interface the non-adhesive layer therebetween, and applying heat to alter the non-adhesive layer to increase thermal contact between the thermal interface material and the interfacing component(s).

Abstract: In some embodiments, a multilayer preform for fast transient liquid phase bonding is presented. In this regard, a method is introduced consisting of forming a plurality of first alloy layers, forming a plurality of second alloy layers, wherein the second alloy has a melting temperature that is higher than the melting temperature of the first alloy, and placing the first and second alloy layers together in an alternating sequence such that there is one more layer of the first alloy than of the second alloy and that the top and bottom layers of the formation are of the first alloy. Other embodiments are also disclosed and claimed.

Abstract: Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a core portion of a TIM, wherein the core portion comprises a high thermal conductivity and does not comprise indium, and forming an outer portion of the TIM on the core portion.

Abstract: A solder preform includes a solder material, a diffusion barrier disposed adjacent to a surface of the solder material, and an oxidation barrier disposed adjacent to the diffusion barrier wherein the diffusion barrier is interposed between the solder material and the oxidation barrier. The solder preform can be disposed adjacent to a bonding surface of a thermal component, and the solder material heated at least to its melting temperature and then cooled below its melting temperature, bonding the solder material with the bonding surface of the thermal component. A flux-free bonding interface can be maintained between the thermal component and the solder preform.

Abstract: A method of forming a microelectronic package, a microelectronic package formed according to the method, and a system including the microelectronic package. The method comprises: providing a die-substrate combination including: providing a die having die bumping sites thereon each including a layer comprising a stabilizing element; providing a substrate having substrate bumping sites thereon; before heating, placing a solder on at least one of the die bumping sites and the substrate bumping sites, the solder including a first solder element and a second solder element; and placing the die and the substrate in registration with one another to sandwich the solder therebetween. The method further comprises forming a plurality of joint structures including heating the die-substrate combination to reflow the solder.